CMOS_VLSI Chapter4 Delay

本文探讨了集成电路设计中的关键概念,如传播延迟、驱动负载余量、时序约束、晶体管宽度与电阻、Elmore延迟、扇出和逻辑努力等。介绍了如何通过减少逻辑阶段、选择合适的门类型以及考虑技术特定延迟来优化延迟。

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一些名词
propagation delay:from input pass 50% to output pass 50%
driver/load
slack: positive slack means meets time constraint,otherwise violate
time constraint: register’s set up time and hold time
critical path: we should focus on the delay of critical path

in this chapter the optimization takes place in number of logic stages,use which kind of gates,the W/L of the transistor

RC delay model

  • transistor=a switch and a resistor
  • usually a unit of NMOS has R resistance
  • a unit of PMOS has 2R resistance
  • k times width of NMOS means R/k resistance
  • k times width of NMOS/PMOS has kR capacitance
  • usually an inverter delay=3RC(2RC+RC)

Elmore delay

a unit inverter drives m same inverter?
C=(3+3m)C,R=R

  • fanout: C(load)/C(in)
  • fanout=1 unit inverter delay=3RC=t
  • delay(generalized)=delay/t

FO4: fanout=4 inverter delay: standard unit for delay

  • Elmore delay includes p delay and e delay
  • parasitic delay: a gate’s effort to drive its own D/S delay(not relevant to sizing)
  • effort delay: fanout,how complicated is the gate?(logical effort),sizing

linear delay model

  • delay=p+f
  • f=gh
  • g: logic effort(input capacitance,grow with number of input)
  • h: fanout

typical logic effort
在这里插入图片描述

for mux: logical effort of mux is always 2,but the p-delay will grow with size,usually,we use 4-input mux

usually FO4 delay is equal to 1/3-1/2 its channel length(in ps)

  • 驱动强度:define as C(input)/logical effort
  • use driver strength to represent delay:d=Cout/x+p

path effort(delay of multi-stage network)

  • path logical effort:G=g1×g2xg3…
  • path electrical effort/path fanout H=Cout/Cin
  • branching effect:B=(Con+Coff)/Con
  • path effort F=GBH

the delay of a path
在这里插入图片描述
minimum delay of a path:
在这里插入图片描述

choose the number of stages

  • the easy way is make each stage effort =4

在这里插入图片描述

tips

  • how is the delay of a gate defined in particular technology
  • making transistor bigger can make load and drive strength both bigger
  • always use less stage,not more
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