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Isc 2SC2570A: Isc Silicon NPN RF Transistor

This document provides specifications for the 2SC2570A silicon NPN RF transistor manufactured by INCHANGE Semiconductor. Key specifications and features include: - Low noise and high gain characteristics with a noise figure of 1.5dB and gain of 8dB at 1GHz. - Designed for use in low-noise amplifiers in VHF and UHF radio frequency stages. - Maximum ratings include a collector-emitter voltage of 12V, collector current of 70mA, and junction temperature of 150°C. Electrical characteristics are provided including current gain, bandwidth, output capacitance, insertion power gain, and noise figure over varying conditions. Graphs illustrate characteristics such as gain, power

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Vaibhav Singh
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© Attribution Non-Commercial (BY-NC)
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55 views

Isc 2SC2570A: Isc Silicon NPN RF Transistor

This document provides specifications for the 2SC2570A silicon NPN RF transistor manufactured by INCHANGE Semiconductor. Key specifications and features include: - Low noise and high gain characteristics with a noise figure of 1.5dB and gain of 8dB at 1GHz. - Designed for use in low-noise amplifiers in VHF and UHF radio frequency stages. - Maximum ratings include a collector-emitter voltage of 12V, collector current of 70mA, and junction temperature of 150°C. Electrical characteristics are provided including current gain, bandwidth, output capacitance, insertion power gain, and noise figure over varying conditions. Graphs illustrate characteristics such as gain, power

Uploaded by

Vaibhav Singh
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as RTF, PDF, TXT or read online on Scribd
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INCHANGE Semiconductor

isc RF Product Specification

isc Silicon NPN RF Transistor

2SC2570A

DESCRIPTION Low Noise and High Gain NF = 1.5 dB TYP. Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5 mA Wide Dynamic Range NF = 1.9 dB TYP. Ga = 9 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 15 mA

APPLICATIONS Designed for use in low-noise amplifier of VHF ~ UHF stages.

ABSOLUTE MAXIMUM RATINGS(Ta=25)


SYMBOL PARAMETER VALUE UNIT

VCBO

Collector-Base Voltage

25

VCEO

Collector-Emitter Voltage

12

VEBO

Emitter-Base Voltage

3.0

IC

Collector Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature

70

mA

PC

0.6

TJ

150

Tstg

Storage Temperature Range

-65~150

isc Website:

INCHANGE Semiconductor

isc RF Product Specification

isc Silicon NPN RF Transistor


ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN

2SC2570A

TYP.

MAX

UNIT A

ICBO

Collector Cutoff Current

VCB= 15V; IE= 0

0.1

IEBO

Emitter Cutoff Current

VEB= 2V; IC= 0

0.1

hFE

DC Current Gain

IC= 20mA ; VCE= 10V

40

200

fT

Current-GainBandwidth Product

IC= 20mA ; VCE= 10V

GHz

COB S21e
2

Output Capacitance

IE= 0 ; VCB= 10V;f= 1.0MHz

0.7

0.9

pF

Insertion Power Gain

IC= 20mA ; VCE= 10V; f= 1.0GHz

10

dB

MAG

Maximum Available Gain

IC= 20mA ; VCE= 10V;f= 1.0GHz

11.5

dB

NF

Noise Figure

IC= 5mA ; VCE= 10V;f= 1.0GHz

1.5

3.0

dB

Vco = 10 V

free Air

isc Website:
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INCHANGE Semiconductor

isc RF Product Specification


f

p isc Silicon NPN RF '\u 0 Transistor


'\up0 TOTAL POWER DISSIPATION
600 vs. AMBIENT TEMPERATURE

2SC2570A

1/

I
a .

.i
.Q..

g40 0

""'
100 150 bient peratur ('C) Operat ingAm 200

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g_

200

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Te m

e TA

I
COLLECTOR CURRENT BASE TO EMITTER VOLTAGE

DC CURRENT GAIN

vs.
rrr 200 rrr---C'1OL ,LE:C.;::::TOr'T R TC'TUR rRE"=' r N-'T_ _--,-, ----, Vee = 10V 50

vs.

10 L U 0.5 1

- -L L -L 5 10 Cdlector Current lc (mA)

. 50

0.5 0.5

I
0.6 0.7 0.8 0.9 Base to Enit ter Voltage Vse (V) INSERTION GAIN vs. COLLECTOR CURRENT

GAINBANDWIDTH PRODUCT COLLECTOR CURRENT :veE=21ov i !

vs.

15

f=1 .0GHz

I ' /

isc Website:

INCHANGE Semiconductor

isc RF Product Specification


/

0.1.'-+'L..Lll-----'----'---'..LJ..I. --'--L'-='::.J=! 0.5 5 10 50 70 Cdlector Current lc (mA)

0 0.5

5 10 50 70 Collector CUrrent lc (mA)

[ '...
Ve< = 10 V lc = 5mA

isc Website:
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G. '... INCHANGE Semiconductor

isc RF Product Specification

"

isc Silicon NPN RF Transistor


OUTPUT ANDINPUT CAPACITANCE vs REVERSE

2SC2570A
NOISE FIGURE vs. COLLECTOR CURRENT I Ve< = 10 V I I= 1.0 GHz

VOLTAGE I = 10. MHz

7 6

['-...
t- ... .

c.!'-.

"'
'

&5
u .

c.,
..........

o
2

......._
1

. /

----50 70

0.5 1 2 5 10 30 Collector to Base Voltage Vcs (V) Emitter to Base Voltage v,. (V) INSERTION POWER GAIN, MAXIMUMAVAILABLE GAIN vs FREQUENCY

20

q;_5

5 10 Collector Current lc (mA)

INSERTIONPOWER GAIN,MAXIMUM AVAILABLE GAIN vs FREQUENCY Vee= 10 V lc = 20 mA

, I Is,. I'
mn

r'\

r - . . r. .- . . . .

"'
2

0 2

0.1

0.2

0.4 0.6 0.81.0

0.1

0.2 0.4 0.6 0.81.0 Frequency I(GHz)

Frequency I(GHz)

isc Website:

INCHANGE Semiconductor

isc RF Product Specification

isc Silicon NPN RF Transistor


S-PARAMETER
VCE = 10 V, IC = 5 mA, ZO = 50

2SC2570A

S-PARAMETER
VCE = 10 V, IC = 20 mA, ZO = 50

isc Website:

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