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EE 334 Lecture 2 Diode

The document discusses diodes and their behavior under forward and reverse bias. It explains that the base-emitter junction of a BJT behaves as a forward-biased diode in amplifying applications. Additionally, it notes that the behavior of diodes under reverse bias is key to integrated circuit fabrication and that diodes are used in many non-amplifying applications. Finally, it identifies four reasons why actual diodes do not behave ideally, including ohmic resistance, avalanche breakdown, surface contaminants, and carrier recombination.

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43 views

EE 334 Lecture 2 Diode

The document discusses diodes and their behavior under forward and reverse bias. It explains that the base-emitter junction of a BJT behaves as a forward-biased diode in amplifying applications. Additionally, it notes that the behavior of diodes under reverse bias is key to integrated circuit fabrication and that diodes are used in many non-amplifying applications. Finally, it identifies four reasons why actual diodes do not behave ideally, including ohmic resistance, avalanche breakdown, surface contaminants, and carrier recombination.

Uploaded by

dreamworld1341
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
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Diode: Why we need to understand diode?

The base emitter junction of the BJT behaves as a forward bias diode in amplifying applications. The behavior of the diode when reverse bias is the key to the fabrication of the integrated circuits. The diode is used in many important nonamplifer applications.

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Creating a Diode

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Minority-carrier distribution in a forward-biased pn junction. It is assumed that the p region is more heavily doped than the n region; NA ND.

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Reverse bias

The pn junction excited by a constant-current source I in the reverse direction. To avoid breakdown, I is kept smaller than Is. Note that the depletion layer widens and the barrier voltage increases by Vr volts, which appears between the terminals as a reverse voltage.
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The charge stored on either side of the depletion layer as a function of the reverse bias.

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Departure from ideal behavior

The four major reason why the actual diode do not correspond exactly to the ideal. 1. Ohmic resistance and contact resistance in series with the diode cause the VI curve to become linear at high forward current. 2. Avalanche or Zener breakdown take place at high reverse voltage, causing an abrupt increase in reverse current. 3. Surface contaminants cause an ohmic layer to form across the junction, which is Increasing the reverse current as reverse voltage is increased. 4. Recombination of current carrier in the depletion region take place due to traps.
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