PEexp05 Hall Sensor
PEexp05 Hall Sensor
5 Hall Effect Current Sensor Hall effect the generation of a voltage difference across a current-carrying conductor or semiconductor while in a magnetice field perpendicular to the current.
A Lorentz force acts on the majority carriers, F = qv B, where v = EL, with being the carrier mobility and EL the longitudinal electric field. The force leads to a charge accumulation on the surface that results in a transversal electric field such that its force on the charge carriers balances that exerted by the
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magnetic field. Hall coefficient AH = VHt/IB VH: Hall voltage, t: thickness, I: primary current, B: magnetic field VH IB Measure an electric current intensity Placing the Hall element in the gap of an open toroidal core, where a current on a winding around it produces a proportional magnetic field. Current Transducer LA 100-P
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Is is positive when Ip flows in the direction of the arror. Temperature of the primary conductor should not exceed 100oC. To achieve the best magnetic coupling, the primary widings have to be wound over the top edge of the device. N : 2000 = Is : Ip, where N = turns of primary winding Vo = Is Rm
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Experiment 5
+15 V 15 V 20 V N = 10
100
200
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