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VLSI Technology and Applications - 10B11EC612: Tutorial Sheet - 1

This document contains 6 problems related to determining carrier concentrations, resistivities, and other properties of semiconductors like germanium and silicon doped with various dopants. It provides intrinsic carrier concentrations, mobilities, and other constants needed to solve for quantities like electron and hole densities, conductivity, resistivity, and maximum resistance of semiconductor samples.

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86 views1 page

VLSI Technology and Applications - 10B11EC612: Tutorial Sheet - 1

This document contains 6 problems related to determining carrier concentrations, resistivities, and other properties of semiconductors like germanium and silicon doped with various dopants. It provides intrinsic carrier concentrations, mobilities, and other constants needed to solve for quantities like electron and hole densities, conductivity, resistivity, and maximum resistance of semiconductor samples.

Uploaded by

harshit420
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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VLSI Technology And Applications - 10B11EC612

Tutorial Sheet 1

1. Determine the intrinsic carrier concentration of germanium if its intrinsic resistivity at 300 K is 0.47 Ohm-m. Given that the electron and hole mobilities are 0.39 m2/Vs and 0.19 m2/Vs respectively. 2. Determine the resistivity of a N-type germanium at 300 K with donor density of 1020/m3. All donors are assumed to be ionized. Given that n=0.38 m2/Vs. 3. At 300K, a sample of germanium is doped with phosphorous to a density of 2*1013 /cm3 as well as with boron to a density of 3.5*106 /cm3. Suppose all the dopants are ionized. Given: n=3900 cm2/Vs, p=1900 cm2/Vs, ni=2.4*1013 /cm3. Determine: i) Electron and hole concentrations in the sample. ii) Conductivity and resistivity of the sample. 4. A sample of silicon is doped with arsenic to a donor density of Nd=4*1017 /cm3 a) Find the majority carrier density. b) Find the minority carrier density. 5. A region of silicon is doped with both phosphorous and boron .The phosphorous doping is Nd=2*1016 /cm3 while the boron doping level is Na=6*1018 /cm3. Determine the polarity (n or p) of the region and find the carrier densities. 6. A sample of Si is doped with boron atoms at an acceptor density of Na=4*1014 /cm3. Given n=1373.36 cm2/Vs, p=485.6 cm2/Vs a) Find the majority and minority carrier densities. b) Find the resistivity of the sample. c) Suppose the region has the dimension of (width, thickness, length respectively) 2m*0.5m*100m. Find the maximum resistance.

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