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Technical Data: NPN Silicon Low Power Transistor

This document provides technical specifications for two NPN silicon low power transistor models, the 2N2432 and 2N2432A. The maximum ratings include voltage, current, power and temperature limits. Thermal characteristics include a junction-to-case thermal resistance of 0.25°C/W. Electrical characteristics in the off and on states include breakdown voltages, cutoff currents, current gains, saturation voltages and capacitances. Both models are qualified per military specifications and packaged in a TO-18 case.

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Vanderlei Marcarini
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30 views

Technical Data: NPN Silicon Low Power Transistor

This document provides technical specifications for two NPN silicon low power transistor models, the 2N2432 and 2N2432A. The maximum ratings include voltage, current, power and temperature limits. Thermal characteristics include a junction-to-case thermal resistance of 0.25°C/W. Electrical characteristics in the off and on states include breakdown voltages, cutoff currents, current gains, saturation voltages and capacitances. Both models are qualified per military specifications and packaged in a TO-18 case.

Uploaded by

Vanderlei Marcarini
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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TECHNICAL DATA

NPN SILICON LOW POWER TRANSISTOR


Qualified per MIL-PRF-19500/313 Devices 2N2432 2N2432A Qualified Level JAN JANTX JANTXV

MAXIMUM RATINGS Ratings


Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage Collector Current Total Power Dissipation

Symbol
VCEO VCBO VECO IC @ TA = +250C (1) @ TC = +250C (2) PT Tstg TJ Symbol RJC

2N2432
30 30 15

2N2432A
45 45 18

Unit
Vdc Vdc Vdc mAdc mW mW 0 C 0 C Unit mW/ 0C

Operating & Storage Junction Temp. Range

100 300 600 -65 to +200 -65 to +175 Max. 0.25

THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.0 mW/0C above TA > +250C 2) Derate linearly 4.0 mW/0C above TC > +250C

TO- 18* (TO-206AA)

*See appendix A for package outline

ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)


Characteristics Symbol Min. Max. Unit

OFF CHARACTERISTICS
Emitter-Collector Breakdown Voltage IE = 100 Adc, IB = 0 IE = 10 mAdc, IB = 0 Collector-Emitter Breakdown Current IC = 10 mAdc Collector-Emitter Cutoff Current VCB = 25 Vdc VCB = 40 Vdc 2N2432 2N2432A Both 2N2432 2N2432A 2N2432 2N2432A V(BR)ECO 15 18 10 30 45 10 10 Vdc

V(BR)CEO

Vdc

ICES

Adc

6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101 Page 1 of 2

2N2432, 2N2432A JAN SERIES

ELECTRICAL CHARACTERISTICS (cont)


Characteristics Symbol Min. Max. Unit

OFF CHARACTERISTICS (cont)


Collector-Emitter Cutoff Current VCB = 30 Vdc VCB = 25 Vdc VCB = 40 Vdc VCB = 45 Vdc Emitter-Collector Cutoff Current VEC = 15 Vdc, VBC = 0 Vdc Emitter-Base Cutoff Current VEB = 15 Vdc 2N2432 2N2432 2N2432A 2N2432A 100 10 100 10 2.0 2.0 Adc Adc Adc Adc Adc Adc

ICBO

IECS IEBO

ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio IC = 10 Adc, VCE = 5.0 Vdc IC = 1.0 mAdc, VCE = 5.0 Vdc Forward-Current Transfer Ratio (Inverted Connection) IC = 0.2 mAdc, VCE = 5.0 Vdc 2N2432 2N2432A Collector-Emitter Saturation Voltage IC = 10 Vdc, IB = 0.5 mAdc Emitter-Collector Offset Voltage IE = 0 mAdc, IB = 200 Adc 2N2432 2N2432A IE = 0 mAdc, IB = 1.0 mAdc 2N2432 2N2432A hFE 30 80 2.0 3.0 0.15 0.5 0.4 0.1 0.7 mVdc 400

hFE(inv) VCE(sat)

VEC(ofs)

mVdc

DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 20 MHz Output Capacitance VCB = 0 Vdc, IE = 0, 100 kHz f 1.0 MHz Input Capacitance VEB = 0 Vdc, IC = 0, 100 kHz f 1.0 MHz (1) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%.

hfe
Cobo Cibo

2.0

10 12 12 pF pF

6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101 Page 2 of 2

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

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