7MBR100SD060

PIM/Built-in converter with thyristor and brake (S series) 600V / 100A / PIM
Features
Low VCE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit

IGBT Modules

Applications
Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25C unless without specified)
Item Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power disspation Repetitive peak reverse voltage(Diode) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Surge 0n-state current (Non-Repetitive) Junction temperature Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Symbol VCES VGES IC ICP -IC PC VCES VGES IC ICP PC V RRM V DRM V RRM IT(AV) ITSM Tjw V RRM IO IFSM I2t Tj Tstg Viso Continuous 1ms 1 device Condition Rating 600 20 100 200 100 400 600 20 50 100 200 600 800 800 100 1050 125 800 100 700 2450 +150 -40 to +125 AC 2500 AC 2500 1.7 *1 Unit V V A A A W V V A A W V V V A A C V A A A 2s C C V V Nm

Brake

Inverter

Continuous 1ms 1 device

Thyristor

50Hz/60Hz sine wave Tj=125C, 10ms half sine wave

Converter

50Hz/60Hz sine wave Tj=150C, 10ms half sine wave

Junction temperature (except Thyristor) Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque

AC : 1 minute

*1 Recommendable value : 1.3 to 1.7 Nm (M4) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26 should be connected together and shorted to copper base.

IGBT Module
Electrical characteristics (Tj=25C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage
Inverter

7MBR100SD060
Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM IDM IRRM IGT V GT V TM V FM IRRM R B Condition VCE=600V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=100mA VGE=15V, Ic=100A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=300V IC=100A VGE=15V RG=24 IF=100A chip terminal IF=100A VCES=600V, VGE=0V VCE=0V, VGE=20V IC=50A, VGE=15V chip terminal VCC=300V IC=50A VGE=15V RG=51 V R=600V V DM=800V V RM=800V VD=6V, IT=1A VD=6V, IT=1A ITM=100A chip terminal IF=100A chip terminal V R=800V T=25C T=100C T=25/50C Characteristics Typ. Max. 250 200 5.5 7.8 8.5 1.8 2.15 2.6 10000 0.45 0.25 0.40 0.05 1.6 1.95 1.2 0.6 1.0 0.35 2.7 300 250 200 2.6 1.2 0.6 1.0 0.35 250 1.0 1.0 100 2.5 1.15 Unit A nA V V pF s

Min.

Input capacitance Turn-on time Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage

V ns A nA V s

Brake

Turn-on time Turn-off time Reverse current off-state current Reverse current Gate trigger current Gate trigger voltage On-state voltage Forward on voltage

1.8 2.05 0.45 0.25 0.40 0.05

Thyristor

Converter

1.0 1.15 1.1 1.2 5000 495 3375

A mA mA mA V V V

Reverse current Resistance B value

1.5 250 520 3450

A K

Thyristor

465 3305

Thermal resistance Characteristics

Item Symbol Condition Min. Inverter IGBT Inverter FWD Brake IGBT Thyristor Converter Diode With thermal compound Characteristics Typ. Max. 0.31 0.70 0.63 0.35 0.47 0.05 Unit

Thermal resistance ( 1 device )

Rth(j-c)

C/W

Contact thermal resistance

Rth(c-f)

* This is the value which is defined mounting on the additional cooling fin with thermal compound

IGBT Module
Characteristics (Representative)
[ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C(typ.)

7MBR100SD060

250

250

[ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125C(typ.)

VGE= 20V 15V 200

12V 200

VGE= 20V

15V

12V

Collector current : Ic [ A ]

150

Collector current : Ic [ A ]

150

100

100

10V 50

50

10V

0 0 1 2 3 4 5

0 0 1 2 3 4 5

Collector - Emitter voltage : VCE [ V ]

Collector - Emitter voltage : VCE [ V ]

[ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)

250

10

[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C(typ.)

Tj= 25C 200

Tj= 125C

150

Collector - Emitter voltage : VCE [ V ]

Collector current : Ic [ A ]

100

Ic=200A 2 Ic=100A Ic= 50A

50

0 0 1 2 3 4

0 5 10 15 20 25

Collector - Emitter voltage : VCE [ V ]

Gate - Emitter voltage : VGE [ V ]

50000

[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C

500

[ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=100A, Tj= 25C

25

Capacitance : Cies, Coes, Cres [ pF ]

Collector - Emitter voltage : VCE [ V ]

400

20

10000

Cies

300

15

5000

200

10

100

1000 Coes Cres 500 0 5 10 15 20 25 30 35

0 0 100 200 300 400 500

0 600

Collector - Emitter voltage : VCE [ V ]

Gate charge : Qg [ nC ]

Gate - Emitter voltage : VGE [ V ]

IGBT Module
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=24 , Tj= 25C
1000 1000

7MBR100SD060
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg= 24 , Tj= 125C

ton

ton toff

Switching time : ton, tr, toff, tf [ nsec ]

Switching time : ton, tr, toff, tf [ nsec ]

toff tr

tr

100

100

tf

tf

10 0 50 100 150 200

10 0 50 100 150 200

Collector current : Ic [ A ]

Collector current : Ic [ A ]

[ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=100A, VGE=15V, Tj= 25C
5000 10

[ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=24

ton

Switching time : ton, tr, toff, tf [ nsec ]

1000

toff tr

Switching loss : Eon, Eoff, Err [ mJ/pulse ]

Eon(125C) 8 Eoff(125C)

Eon(25C) 6

Eoff(25C) 4

100

tf

Err(125C)

Err(25C) 10 10 100 300 0 0 50 100 150 200

Gate resistance : Rg [ ]

Collector current : Ic [ A ]

[ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=100A, VGE=15V, Tj= 125C
20 1200

[ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE<=15V, Rg>=24 ,Tj<=125C

Switching loss : Eon, Eoff, Err [ mJ/pulse ]

Eon 15

1000

Collector current : Ic [ A ]

800

10 Eoff

600 SCSOA (non-repetitive pulse) 400

5 200 RBSOA (Repetitive pulse) 0 10 100 300 0 200 400 600 800

Err 0

Gate resistance : Rg [ W ]

Collector - Emitter voltage : VCE [ V ]

IGBT Module

7MBR100SD060

[ Inverter ] Forward current vs. Forward on voltage (typ.)

250 300

[ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=15V, Rg=24

200

Tj=125C

Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]

100

trr(125C) Irr(125C) trr(25C) Irr(25C)

Forward current : IF [ A ]

Tj=25C 150

100

50

10

0 0 1 2 3

5 0 50 100 150 200

Forward on voltage : VF [ V ]

Forward current : IF [ A ]

[ Converter ] Forward current vs. Forward on voltage (typ.)

250 300

[ Thyristor ] On-state current vs. On-state voltage (typ.)

Tj= 25C 200

Tj= 125C

Tjw= 125C

Tjw= 25C

150

100

Instantaneous on-state current [ A ]

0.4 0.8 1.2 1.6 2.0

100

Forward current : IF [ A ]

10

50

0 0.0

2 0.0

0.4

0.8

1.2

1.6

2.0

Forward on voltage : VFM [ V ]

Instantaneous on-state voltage [ V ]

Transient thermal resistance

5 200 100

[ Thermistor ] Temperature characteristic (typ.)

Thermal resistanse : Rth(j-c) [ C/W ]

1 FWD[Inverter]

Resistance : R [ k ]

IGBT[Brake] Conv. Diode Thyristor IGBT[Inverter]

10

0.1

0.01 0.001

0.01

0.1

0.1 -60

-40

-20

20

40

60

80

100

120

140

160

180

Pulse width : Pw [ sec ]

Temperature [ C ]

IGBT Module

7MBR100SD060

120

[ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25C(typ.)

VGE= 20V 15V 12V

[ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125C(typ.)

120

VGE= 20V 100

15V

12V

100

Collector current : Ic [ A ]

80

Collector current : Ic [ A ]

80

60

60

40

40 10V

20

10V

20

0 0 1 2 3 4 5

0 0 1 2 3 4 5

Collector - Emitter voltage : VCE [ V ]

Collector - Emitter voltage : VCE [ V ]

120

[ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)

10

[ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C(typ.)

Tj= 25C 100

Tj= 125C

80

Collector - Emitter voltage : VCE [ V ]

Collector current : Ic [ A ]

60

40

Ic=100A 2 Ic= 50A Ic= 25A

20

0 0 1 2 3 4

0 5 10 15 20 25

Collector - Emitter voltage : VCE [ V ]

Gate - Emitter voltage : VGE [ V ]

[ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C
20000 500

[ Brake ] Dynamic Gate charge (typ.) Vcc=300V, Ic=50A, Tj= 25C

25

10000

Capacitance : Cies, Coes, Cres [ pF ]

Collector - Emitter voltage : VCE [ V ]

400

20

Cies

300

15

1000

200

10

Coes Cres

100

100 0 5 10 15 20 25 30 35

0 0 50 100 150 200 250

0 300

Collector - Emitter voltage : VCE [ V ]

Gate charge : Qg [ nC ]

Gate - Emitter voltage : VGE [ V ]

IGBT Module
Outline Drawings, mm

7MBR100SD060

Marking : White Marking : White

Equivalent Circuit Schematic

[ Converter ]
21 (P)

[ Thyristor ]
26

[ Brake ]
22(P1)

[ Inverter ]

[ Thermistor ]

8 25 20 (Gu) 18 (Gv ) 16 (Gw)

1(R)

2(S)

3(T) 19(Eu) 7(B)

17(Ev ) 4(U)

15(Ew) 5(V)

6(W)

14(Gb) 23(N) 24(N1)

13(Gx)

12(Gy )

11(Gz) 10(En)