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Sipmos Small-Signal Transistor: GS (TH)

This document provides specifications for a P-channel enhancement mode MOSFET transistor. Key details include: - It operates at logic level voltages between -0.8V and -2.0V. - Maximum ratings include a drain-source breakdown voltage of -240V, continuous drain current of -0.15A, and power dissipation of 1W. - Electrical characteristics include an on-state resistance between 10-20 ohms and input/output capacitances between 95-130pF. - Graphs show characteristics such as drain current and breakdown voltage over temperature.

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Miloud Chougui
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24 views

Sipmos Small-Signal Transistor: GS (TH)

This document provides specifications for a P-channel enhancement mode MOSFET transistor. Key details include: - It operates at logic level voltages between -0.8V and -2.0V. - Maximum ratings include a drain-source breakdown voltage of -240V, continuous drain current of -0.15A, and power dissipation of 1W. - Electrical characteristics include an on-state resistance between 10-20 ohms and input/output capacitances between 95-130pF. - Graphs show characteristics such as drain current and breakdown voltage over temperature.

Uploaded by

Miloud Chougui
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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BSS 192

SIPMOS Small-Signal Transistor

P channel Enhancement mode Logic Level


VGS(th) = -0.8...-2.0 V

Pin 1 G

Pin 2 D

Pin 3 S

Pin 4 D

Type

VDS
-240 V

ID
-0.15 A

RDS(on)
20

Package

Marking

BSS 192
Type BSS 192

SOT-89

KB

Ordering Code Q62702-S634

Tape and Reel Information E6327

Maximum Ratings Parameter Symbol Values Unit

Drain source voltage Drain-gate voltage


RGS = 20 k

VDS V
DGR

-240

-240
VGS ID

Gate source voltage Continuous drain current


TA = 34 C

20
A -0.15

DC drain current, pulsed


TA = 25 C

IDpuls

-0.6
Ptot

Power dissipation
TA = 25 C

W 1

Data Sheet

05.99

BSS 192

Maximum Ratings Parameter Symbol Values Unit

Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1

Tj Tstg RthJA

-55 ... + 150 -55 ... + 150

125
E 55 / 150 / 56

K/W

Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit

Static Characteristics

Drain- source breakdown voltage


VGS = 0 V, ID = -0.25 mA, Tj = 25 C

V (BR)DSS

V -240 -

Gate threshold voltage


VGS=VDS, ID = -1 mA

V GS(th)

-0.8
IDSS

-1.5

-2 A

Zero gate voltage drain current


VDS = -240 V, VGS = 0 V, Tj = 25 C VDS = -240 V, VGS = 0 V, Tj = 125 C VDS = -60 V, VGS = 0 V, Tj = 25 C

IGSS

-0.1 -10 -

-1 -100 -0.2 nA

Gate-source leakage current


VGS = -20 V, V DS = 0 V

RDS(on)

-10

-100

Drain-Source on-state resistance


VGS = -10 V, ID = -0.15 A

10 20

Data Sheet

05.99

BSS 192

Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit

Transconductance
VDS 2 * ID * RDS(on)max, ID = -0.15 A

gfs

S 0.06 0.12 pF 95 130

Input capacitance
VGS = 0 V, V DS = -25 V, f = 1 MHz

Ciss

Output capacitance
VGS = 0 V, V DS = -25 V, f = 1 MHz

Coss

Crss

20

30

Reverse transfer capacitance


VGS = 0 V, V DS = -25 V, f = 1 MHz

td(on)

10

15 ns

Turn-on delay time


VDD = -30 V, V GS = -10 V, ID = -0.25 A RGS = 50

tr

12

Rise time
VDD = -30 V, V GS = -10 V, ID = -0.25 A RGS = 50

td(off)

25

40

Turn-off delay time


VDD = -30 V, V GS = -10 V, ID = -0.25 A RGS = 50

tf

25

33

Fall time
VDD = -30 V, V GS = -10 V, ID = -0.25 A RGS = 50

42

55

Data Sheet

05.99

BSS 192

Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit

Inverse diode continuous forward current


TA = 25 C

IS

A -0.15

Inverse diode direct current,pulsed


TA = 25 C

ISM

V SD

-0.6 V

Inverse diode forward voltage


VGS = 0 V, IF = -0.3 A, Tj = 25 C

-0.85

-1.2

Data Sheet

05.99

BSS 192

Power dissipation Ptot = (TA)

Drain current ID = (TA) parameter: VGS -10 V


-0.16

1.2 W

A 1.0

Ptot

0.9 0.8

ID

-0.12

-0.10 0.7 0.6 0.5 -0.06 0.4 0.3 0.2 -0.02 0.1 0.0 0 20 40 60 80 100 120 C 160 0.00 0 20 40 60 80 100 120 C 160 -0.04 -0.08

TA

TA

Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25C

Drain-source breakdown voltage V(BR)DSS = (Tj)

-285 V -275

V(BR)DSS -270
-265 -260 -255 -250 -245 -240 -235 -230 -225 -220 -215 -60

-20

20

60

100

160

Tj

Data Sheet

05.99

BSS 192

Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C


-0.34 A -0.28

Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C


65

Ptot = 1W

lk j i

g
VGS [V] a -2.0
b -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -6.0 -7.0 -8.0 -9.0 -10.0

55

ID

RDS (on)

50 45 40 35 30 25 20 15 10
VGS [V] =
a b c d e f -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 g h i j -5.0 -6.0 -7.0 -8.0 k l -9.0 -10.0

-0.24 -0.20
e

c d e f g h i

-0.16 -0.12 -0.08


d

j k l

g i k jl h

-0.04 0.00 0 -1 -2 -3 -4 -5 -6 -7
a

5 0 -8 V -10 0.00

-0.04

-0.08

-0.12

-0.16

-0.20

-0.26

VDS

ID

Typ. transfer characteristics ID = f(VGS)

Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 s
VDS 2 x ID x RDS(on)max
-0.40

parameter: tp = 80 s,
V DS2 x ID x RDS(on)max
0.20 S
gfs

A
ID

0.16 0.14

-0.30

-0.25

0.12 0.10 0.08 0.06

-0.20

-0.15

-0.10 0.04 -0.05 0.00 0 -1 -2 -3 -4 -5 -6 -7 -8 V


VGS

0.02 0.00 -10 0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 A
ID

-0.40

Data Sheet

05.99

BSS 192

Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = -0.15 A, VGS = -10 V


50

Gate threshold voltage VGS (th) = (Tj ) parameter: VGS = VDS, ID = -1 mA


-4.6 V -4.0

RDS (on) 40
35 30 25 20 15 10 5 0 -60 -20 20 60 100 C 160

VGS(th)

-3.6 -3.2 -2.8

98%

-2.4

98%
-2.0 -1.6

typ

typ

-1.2

2%
-0.8 -0.4 0.0 -60 -20 20 60 100 C 160

Tj

Tj

Typ. capacitances

C = f (VDS)

parameter:VGS=0V, f = 1 MHz
10 3

Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s


-10 0

pF
C

IF
10 2 -10 -1

Ciss

Coss

10 1
Crss

-10 -2

Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%)

10 0 0

-5

-10

-15

-20

-25

-30

V
VDS

-40

-10 -3 0.0

-0.4

-0.8

-1.2

-1.6

-2.0

-2.4

-3.0

VSD

Data Sheet

05.99

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