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Multiple Choice Questions PNJunction

The document contains 10 multiple choice questions about PN junctions. Key points covered in the questions include: 1) The sequence of events that occur when a PN junction is forward biased is injection, diffusion, and recombination. 2) The depletion region within a PN junction is depleted of mobile charges and is reduced when the junction is forward biased. 3) For a reverse biased PN junction, the current increases abruptly at the breakdown voltage.

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ANkit JAin
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© Attribution Non-Commercial (BY-NC)
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806 views

Multiple Choice Questions PNJunction

The document contains 10 multiple choice questions about PN junctions. Key points covered in the questions include: 1) The sequence of events that occur when a PN junction is forward biased is injection, diffusion, and recombination. 2) The depletion region within a PN junction is depleted of mobile charges and is reduced when the junction is forward biased. 3) For a reverse biased PN junction, the current increases abruptly at the breakdown voltage.

Uploaded by

ANkit JAin
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as PDF, TXT or read online on Scribd
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PN JUNCTION

Multiple Choice Questions (MCQs)


1. When the PN junction is forward biased the sequence of events that take place are : a. Diffusion, drift and recombination. b. Injection, diffusion and recombination. c. Diffusion, injection and drift. d. None of the above.

2. The depletion region of PN junction is one, that is depleted of a. Atoms b. Mobiles charges c. Immobile charges d. Velocity of the carriers

3. The depletion region within a PN junction is reduced when the junction has: a. Zero bias b. Forward bias c. Reverse bias d. All of these

4. A silicon PN junction in forward conduction has a voltage drop closer to a. 0.1 V b. 0.7 V 1.7V d. 2.1V c.

5. For a reverse biased PN junction, the current through the junction increases abruptly at a. Breakdown voltage b 0V 0.2 eV d. 7.2 eV c.

6. The reverse saturation current of a PN junction varies with temperature (T) as a. T b. 1/T c. Independent of T d. T2

7. The transition capacitance of a reverse biased PN junction having uniform doping on both sides, varies with junction voltage (VB) as b. VB a. 1/VB -1/2 c. VB d. VB 2

8. The leakage current of a PN junction is caused by a. Heat energy b. c. Barrier potential d.

Chemical energy Majority carriers

9. The junction capacitance of linearly graded junction varies with the applied reverse bias, VR as a. VR-1 b. VR-1/2 c. VR-1/3 d. VR1/2

10. The diffusion capacitance of a forward biased P+N junction diode with a steady current I depends on a. Width of the depleted region b. Mean life-time of the holes c. Mean life-time of the electrons d. Junction area (A P+N junction diode is a diode with very heavily doped P region)

Answers
1. (b) 5. (a) 9. (c) 2. 6. 10. (b) (a) (c) 3. 7. (b) (c) 4. 8. (b) (a)

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