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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The document provides a product specification for the SavantIC Semiconductor 2SC2564 silicon NPN power transistor. Key details include: - It has an MT-200 package and is intended for power amplifier applications. - Absolute maximum ratings include a collector-base voltage of 140V and collector current of 12A. - Characteristics include a collector-emitter saturation voltage of 2.0V max, DC current gain of 50 min, and transition frequency of 80MHz min. - It provides pinning, package outline, and DC current gain classifications.

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24 views

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The document provides a product specification for the SavantIC Semiconductor 2SC2564 silicon NPN power transistor. Key details include: - It has an MT-200 package and is intended for power amplifier applications. - Absolute maximum ratings include a collector-base voltage of 140V and collector current of 12A. - Characteristics include a collector-emitter saturation voltage of 2.0V max, DC current gain of 50 min, and transition frequency of 80MHz min. - It provides pinning, package outline, and DC current gain classifications.

Uploaded by

perro s
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC2564

DESCRIPTION With MT-200 package Complement to type 2SA1094 High transition frequency APPLICATIONS For power amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION

Absolute maximum ratings (Ta=25C)


SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collectorl power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 140 140 5 12 1.2 150 150 -55~150 UNIT V V V A A W

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors


CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A; IB=0 IE=10mA; IC=0 IC=5 A; IB=0.5 A IC=5A ; VCE=5V VCB=140V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IC=1A ; VCE=10V 55 40 MIN 140 5

2SC2564

SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT

TYP.

MAX

UNIT V V

2.0 2.0 50 50 240

V V A A

80

MHz

hFE-1 classifications R 55-110 O 80-160 Y 120-240

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors


PACKAGE OUTLINE

2SC2564

Fig.2 Outline dimensions

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