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2SC 4466

This document provides specifications for the 2SC4466 silicon NPN power transistor from SavantIC Semiconductor. Key details include: - It has a TO-3PN package and is intended as a complement to the 2SA1693 transistor. - Absolute maximum ratings include a collector-base voltage of 120V, collector-emitter voltage of 80V, and junction temperature of 150°C. - Typical characteristics include a collector-emitter saturation voltage of 1.5V at 2A collector current, and transition frequency of 20MHz at -0.5A collector current. - Switching times are listed for turning on (0.16μs), storage (2.60

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79 views

2SC 4466

This document provides specifications for the 2SC4466 silicon NPN power transistor from SavantIC Semiconductor. Key details include: - It has a TO-3PN package and is intended as a complement to the 2SA1693 transistor. - Absolute maximum ratings include a collector-base voltage of 120V, collector-emitter voltage of 80V, and junction temperature of 150°C. - Typical characteristics include a collector-emitter saturation voltage of 1.5V at 2A collector current, and transition frequency of 20MHz at -0.5A collector current. - Switching times are listed for turning on (0.16μs), storage (2.60

Uploaded by

Johanes St
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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com

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC4466

DESCRIPTION With TO-3PN package Complement to type 2SA1693 APPLICATIONS Audio and general purpose
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION

Absolute maximum ratings(Ta= )


SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 120 80 6 6 3 60 150 -55~150 UNIT V V V A A W

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SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors


CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=50mA ;IB=0 IC=2A; IB=0.2A VCB=120V; IE=0 VEB=6V; IC=0 IC=2A ; VCE=4V IE=0 ; VCB=10V,f=1MHz IC=-0.5A ; VCE=12V 50 MIN 80 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE COB fT

2SC4466

TYP.

MAX

UNIT V

1.5 10 10 180 110 20

V A A

pF MHz

Switching times ton ts tf Turn-on time Storage time Fall time IC=3A;RL=10B IB1=- IB2=0.3A VCC=30V 0.16 2.60 0.34 s s s

hFE Classifications O 50-100 P 70-140 Y 90-180

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SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors


PACKAGE OUTLINE

2SC4466

Fig.2 outline dimensions (unindicated tolerance:0.1mm)

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SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC4466

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