C536 PDF
C536 PDF
2SC536
FEATURES Power dissipation PCM:
TRANSISTOR (NPN)
TO-92
1. EMITTER
400 mW (Tamb=25)
2. COLLECTOR 3. BASE 1 2 3
Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob
Ic=100A, IE=0 Ic=1mA, IB=0 IE=100A, IC=0 VCB=35V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA IC=50mA, IB=5mA VCE=6V, IC=1mA VCE=6V, f=1MHz
V V V A A
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