A simple 3D CMOS process simulated by CSuprem

Initialize # 3D mode mode quasi3d 3d_mesh nsegm=3 infile=mesh # p substrate initial boron concentration=1.0e15 orientation=100 structure outf=01_sub.str 01_sub.str pad oxide # wet oxide diffuse temperature=900 time=15 weto2 # deposit thin layer of Si3N4 deposit nitride thick=0.08 temp=800 structure outfile=02_pad.str 02_pad.str STI formation # STI plasma etch foreach %zk (1 to 2 step 1) mask x1.from=0.2 x1.to=1.4 x2.from=1.6 x2.to=2.8 thick=1.0 segm=%zk end struct outf=03a_STI_mask.str foreach %zk (1 to 2 step 1) etch nitride depth=0.1 avoidmask segm=%zk etch oxide depth=0.1 avoidmask segm=%zk etch silicon depth=0.35 avoidmask segm=%zk etch photoresist all segm=%zk end etch nitride dry thick=0.1 segm=3 etch oxide dry thick=0.1 segm=3 etch silicon dry thick=0.35 segm=3 struct outf=03_STI_etch.str

03a_STI_mask.str (left) and After plasma etch of STI 03_STI_etch.str (right) STI liner and fill

# STI liner oxide method viscous grid.oxide=0.02 diffuse temp=1100 time=2 dryo2 structure outf=04_STI_liner.str # STI HDP fill deposit oxide thick=0.8 structure outf=05_STI_fill.str 04_STI_liner.str STI liner oxide

STI CMP # CMP stops at nitride foreach %zk (1 to 3 step 1) etch start x=0 y=-2 segm=%zk etch continue x=0 y=-0.08 segm=%zk etch continue x=3 y=-0.08 segm=%zk etch done x=3 y=-2 segm=%zk end structure outf=06_STI_CMP.str 06_STI_CMP.str CMP stops at nitride layer

Oxide nitride strip # oxide nitride chemical strip foreach %zk (1 to 3 step 1) etch nitride all segm=%zk etch oxide dry thick=0.05 segm=%zk end structure outf=07_ON_strip.str

07_ON_strip.str Chemical strip of remaining oxide and nitride layer p and n well implant # p well implant foreach %zk (1 to 2 step 1) mask x1.from=0.1 x1.to=1.5 thick=1.1 segm=%zk end mask x1.from=0.1 x1.to=3 thick=1.1 segm=3 structure outf=08a_pwell_mask.str implant boron dose=6e12 energy=80 foreach %zk (1 to 3 step 1) etch photoresist all segm=%zk end diffuse time=20/60 temp=1000 nitrogen structure outf=08_pwell.str # n well implant foreach %zk (1 to 2 step 1) mask x1.from=1.5 x1.to=2.9 thick=1.1 segm=%zk end mask x1.from=0.1 x1.to=3 thick=1.1 segm=3 structure outf=09a_nwell_mask.str implant phosphorus dose=5e12 energy=120 foreach %zk (1 to 3 step 1) etch photoresist all segm=%zk end diffuse time=90 temp=1000 nitrogen regrid log10.change=5.0 refine structure outf=09_nwell.str

09a_nwell_mask.str N well mask (left) and 09_nwell.str after well implant drive in (right) Gate oxide and poly # Gate oxide foreach %zk (1 to 3 step 1) etch start x=0 y=-1 segm=%zk etch continue x=0 y=0.025 segm=%zk etch continue x=3 y=0.025 segm=%zk etch done x=3 y=-1 segm=%zk end # Re-grow dry oxide diffuse temp=850 time=45 dryo2 structure outf=10_gate_oxide.str # Gate Poly deposition deposit poly thick=0.2 diffuse time=20/60 temp=1100 nitrogen foreach %zk (1 to 3 step 1) mask x1.from=0.6 x1.to=1.0 x2.from=2.0 x2.to=2.4 thick=1.1 segm=%zk end structure outf=11a_gate_poly_mask.str foreach %zk (1 to 3 step 1) etch poly dry thick=0.35 segm=%zk etch photoresist all segm=%zk end structure outf=11_gate_poly.str

Gate poly deposition: 11a_gate_poly_mask.str (left) and 11_gate_poly.str poly after etch (right)

PLDD implant and NLDD implant # p-LDD implant foreach %zk (1 to 2 step 1) mask x1.from=1.5 x1.to=3 thick=1.1 segm=%zk end structure outf=12a_pldd_mask.str implant bf2 dose=2e13 energy=50 foreach %zk (1 to 2 step 1) etch photoresist all segm=%zk end diffuse time=30/60 temp=1000 nitrogen structure outf=12_pldd.str # n-LDD implant foreach %zk (1 to 2 step 1) mask x1.from=0 x1.to=1.5 thick=1.1 segm=%zk end structure outf=13a_nldd_mask.str implant phosphorus dose=9e12 energy=20 foreach %zk (1 to 2 step 1) etch photoresist all segm=%zk end diffuse time=20/60 temp=1000 nitrogen regrid log10.change=7.0 refine foreach %zk (1 to 3 step 1) etch oxide dry thick=0.02 segm=%zk end structure outf=13_nldd.str Oxide or nitride spacer # oxide spacer option etch.type=2 deposit oxide thick=0.1 meshlayer=3 structure outf=14a_spacer_depo.str foreach %zk (1 to 3 step 1) etch oxide dry thick=0.105 spacing=0.01 segm=%zk end structure outf=14_spacer.str

14a_spacer_depo.str Oxide spacer deposit (left) and 14_spacer.str after spacer etch (right) Drain and Source implant # Source and Drain implant PMOS foreach %zk (1 to 3 step 1) mask x1.from=1.5 x1.to=3 thick=1.1 segm=%zk end structure outf=15a_psd_mask.str implant boron dose=1e14 energy=15 foreach %zk (1 to 3 step 1) etch photoresist all segm=%zk end diffuse time=5/60 temp=950 nitrogen structure outf=15_psd.str # Source and Drain implant NMOS foreach %zk (1 to 3 step 1) mask x1.from=0 x1.to=1.5 thick=1.1 segm=%zk end structure outf=16_nsd_mask.str implant phosphorus dose=9e13 energy=25 foreach %zk (1 to 3 step 1) etch photoresist all segm=%zk end diffuse time=10/60 temp=1000 nitrogen regrid log10.change=5.0 refine foreach %zk (1 to 3 step 1) etch oxide dry thick=0.018 segm=%zk end structure outf=16_nsd.str

CMOS finished structure file 16_nsd (left) and net doping file 16_nsd (right)