Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Exercise Solutions
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Chapter 8
Exercise Solutions
EX8.1

1
VCC = 12 V
2
25
= 2 I CQ = 2 = 4.17 A
12

(a) PT = I CVCE ; At VCEQ =

25 = I CQ (12) I C ,max
24
= 5.76
4.167
PQ , max = 25 W
RL =

(b) 25 = I CQ VCC = I CQ (6) I CQ = 4.17 A, I C , max = 5 A

2

12
RL =
= 2.4
5
At I CQ = 2.5 A, VCEQ = 6 V
PQ ,max = (2.5)(6 ) = 15 W

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EX8.2

PQ = (2 )(8) = 16 W

(a) Tdev = 25 + (16 )(3 + 1 + 4) = 153 C

(b) Tcase = 25 + (16 )(1 + 4) = 105 C
(c) Tsnk = 25 + (16 )(4 ) = 89 C
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EX8.3
dev case =
PD ,max =

TJ ,max Tamb
PD,rated

200 25
= 3.5C/W
50

TJ ,max Tamb

dev case + case snk + snk amb

200 25
PD ,max = 29.2 W
3.5 + 0.5 + 2
= Tamb + PD ,max ( case snk + snk amb )

=
Tcase

= 25 + ( 29.2 )( 0.5 + 2 ) Tcase = 98C

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Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
EX8.4
a.
b.

I DQ =

10 4
I DQ = 60 mA
0.1

9
vds = ( 60 )( 0.050 ) = 2.7 V vDS ( min ) = 4 2.7 = 1.3 V
10

So maximum swing is determined by drain-to-source voltage.

VPP = 2 ( 2.5) = 5.0 V

c.
1 VP2 1 ( 2.5 )

=
PL = 31.25 mW
2 RL 2 0.1
2

PL =

PS = VDD I DQ = (10 )( 60 ) = 600 mW

PL
PS

31.25
= 5.2%
600

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EX8.5 Computer Analysis
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EX8.6 No Exercise Problem
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EX8.7

8
= 0.32 A
25
= (0.2 )(0.32 ) 64 mA

(a) For O = 8 V, i L =
I DQ

I DQ = K (VGS VTN )

64 = 250(VGS 1.2 ) VGS =

2

Then V BB = 3.412 V

V BB
= 1.706 V
2

V BB
V
GSn I = O BB + GSn
2
2
d GSn
d I
= 1+
d O
d O
We have
d GSn d GSn di dn
=

d O
didn d O

(b) O = I +

GSn =

idn
d GSn 1 1
1
+ VTN
=

2 K
K
di dn
idn

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
(i) For O 0 (very small), then
idn = i L + idp i dp idn
so i dn
then

idn
O

1
i L
2
1 i
1 1
1
= L =
=
= 0.02
2 O 2 R L 50

For O 0 , idn = 0.064 A

d GSn 1
1
1
=

= 3.953
2 0.25 0.064
didn
Then
d I
= 1 + (3.953)(0.02 ) = 1.079
d O
Or
d O
= 0.927
d I

(ii) For O 8 V, i dn = i L
didn
di
1
= L =
= 0.04
d O d O R L
then
d GSn 1
1
1
=

= 1.768
2 0.25
di dn
0.32
d I
= 1 + (1.768)(0.04 ) = 1.0707
d O
Or
d O
= 0.934
d I
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EX8.8
a.
Rb = r + (1 + ) RE and RE = a 2 RL = (10 ) ( 8 ) = 800
Ri = 1.5 k = RTH Rb
2

IQ =
r =

VCC
18
=
= 22.5 mA
a 2 RL (10 )2 ( 8 )

(100 )( 0.026 )

= 0.116 k
22.5
Rb = 0.116 + (101)( 0.8 ) = 80.9 k

1.5 = RTH 80.9 =

RTH ( 80.9 )

RTH + ( 80.9 )

( 80.9 1.5 ) RTH = (1.5 )( 80.9 ) RTH = 1.53 k

R2
1
VTH =
VCC = RTH VCC
R
+
R
R
1
2
1

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Exercise Solutions
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22.5
= 0.225 mA
100
V 0.7
1
= TH
(1.53)(18 ) = ( 0.225 )(1.53) + 0.7 R1 = 26.4 k
RTH
R1

I BQ =
I BQ

IQ

26.4 R2
= 1.53
26.4 + R2

( 26.4 1.53) R2 = (1.53)( 26.4 ) R2 = 1.62 k

b.

vE = 0.9VCC = ( 0.9 )(18 ) = 16.2 V

iE = 0.9 I CQ = ( 0.9 )( 22.5 ) = 20.25 mA

v
16.2
VP = 1.62 V
v0 = E =
a
10
i0 = aiE = (10 )( 20.25 ) I P = 203 mA

PL =

1
(1.62 )( 0.203) PL = 0.164 W
2

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EX8.9
10 3
(a) For I Q = 1 mA, BE = (0.026) ln
14
2 10
Then V BB = 1.281 V

= 0.6405 V

0.6405
For D1 , D2 ; I Bias = 1.2 10 14 exp
= 0.60 mA
0.026
1.2
= 1.2 mA
(b) O = 1.2 V, i L =
1
1st approximation:
iCn = 1.6 mA, i Bn = 0.016 mA
1.6 10 3
= 0.65274 V
14
2 10
I D = 0.60 0.016 = 0.584 mA

BEn = (0.026 ) ln

0.584 10 3
= 1.27963 V
V BB = 2(0.026 ) ln
14
1.2 10

then EBp = 1.27963 0.65274 = 0.62689 V

0.62689
iCp = 2 10 14 exp
= 0.59206 mA
0.026
2nd approximation:
i En = 1.2 + 0.59206 = 1.792 mA; iCn = 1.7743 mA
After 4 iterations:
iCn = 1.73 mA; iCp = 0.547 mA

BEn = 0.6547 V; EBp = 0.6248 V

I D = 0.5827 mA

(c) O = 3 V; i L =

3
= 3 mA
1

1st approximation;
iCn = 3.3 mA, i Bn = 0.033 mA

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
3.3 10 3
= 0.67156 V
14
2 10
I D = 0.6 0.033 = 0.567 mA

BEn = (0.026) ln

0.567 10 3
= 1.2781 V
V BB = 2(0.026) ln
14
1.2 10

EBp = 1.2781 0.67156 = 0.6065 V

0.6065
iCp = 2 10 14 exp
= 0.2706 mA
0.026
Then i En = 3 + 0.2706 = 3.2706 mA; iCn = 3.2382 mA
After 4 iterations:
iCn = 3.24 mA; i Cp = 0.276 mA

BEn = 0.671 V, EBp

= 0.607 V

I D = 0.5676 mA
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EX8.10 No Exercise EX8.10

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EX8.11
a.
vI = 0 = v0 , vB 3 = 0.7 V
12 0.7 11.3
I R1 =
=
I R1 = 45.2 mA
R1
0.25

If transistors are matched, then

iE1 = iE 3
i
iR1 = iE1 + iB 3 = iE1 + E 3
1+

1
1

iR1 = iE1 1 +
= iE1 1 +
1
41

45.2
iE1 =
iE1 = iE 2 = 44.1 mA
1.024
i
44.1
iB1 = iB 2 = E1 =
iB1 = iB 2 = 1.08 mA
1+
41

b.
For vI = 5 V v0 = 5 V
5
i0 = 0.625 A
8
0.625
iE 3 0.625 A, iB 3 =
iB 3 = 15.2 mA
41
12 5.7
vB 3 = 5.7 V iR1 =
= 25.2 mA
0.25
10
iE1 = 25.2 15.2 iE1 = 10.0 mA iB1 =
= 0.244 mA
41
vB 4 = 5 0.7 = 4.3 V
i0 =

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
IR2 =

4.3 ( 12 )
0.25

= 65.2 mA iE 2

65.2
= 1.59 mA
41
iI = iB 2 iB1 = 1.59 0.244 iI = 1.35 mA
iB 2 =

AI =

i0 625
=
AI = 463
iI 1.35

c.
From Equation (8.55)
(1 + ) R ( 41)( 250 )
AI =

2 RL

2 (8)

= 641

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Test Your Understanding Solutions

TYU8.1
For
For

VDS = 0, I D ( max ) =

24
= 1.2 A = ID ( max )
20

I D = 0 VDS ( max ) = 24 V
Maximum power when
VDS =
ID =

VDS ( max )
2
I D ( max )
2

= 12 V and

= 0.6 A PD ( max ) = (12 )( 0.6 ) = 7.2 Watts

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TYU8.2
(a) RE =

VCC ( VCC ) 12 ( 12 )
=
= 96
I C ,max
0.25

(b) For I CQ = 0.125 A, VCEQ = 12 V

PQ , max = (0.125 )(12 ) = 1.5 W

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TYU8.3
(a) T = P = (6 )(1.8) = 10.8 C
T 100
=
= 40 W
(b) P =
2.5

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Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
TYU8.4
(a) VCEQ = 6 = VCC I CQ R L = 12 I CQ (1) I CQ = 6 mA
PQ = I CQVCEQ = (6 )(6 ) = 36 mW

1 V P2 1 (4.5)

=
= 10.1 mW
2 RL 2 1
10.1
10.1
100% =
100% = 14.1%
(ii) =
I CQVCC
(6)(12)
2

(b) (i) PL =

(iii) PQ = 36 10.1 = 25.9 mW

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TYU8.5

a.
b.

PL =

1 VP2
20

VP = 2 RL PL = 2 ( 8 )( 25 ) VP = 20 V VCC =
VCC = 25 V
2 RL
0.8

IP =

VP 20
=
I P = 2.5 A
8
RL

PQ =

VCCVP VP2

RL 4 RL

PQ =

( 25)( 20 ) ( 20 )

(8)
4 (8)

c.

= 19.9 12.5 PQ = 7.4 W

VP 20
=
= 62.8%
4VCC 4 25

d.
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TYU8.6
PL =

( 4)
1 VP2

=
PL = 80 mW
2 RL 2 ( 0.1)

IP =

VP
4
=
I P = 40 mA
RL 0.1

PQ =

VCCVP VP2

RL 4 RL

PQ =

( 5 )( 4 ) ( 4 )

= 63.7 40 PQ = 23.7 mW
( 0.1) 4 ( 0.1)

a.
b.

c.
=

VP 4
= = 62.8%
4VCC 4 5

d.
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Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
TYU8.7
a.
I CQ

1 2VCC

2 RL

VCC 12
=
= 8 mA
=
RL 1.5

RTH = R1 R2
R2
1
VTH =
VCC = RTH VCC
R1
R1 + R2
I CQ
VTH VBE
8
=
= 0.107 mA =
I BQ =

75
RTH + (1 + ) RE

Let RTH = (1 + ) RE = ( 76 )( 0.1) = 7.6 k

1
( 7.6 )(12 ) 0.7
R1
0.107 =
7.6 + 7.6
1
( 91.2 ) = 2.33 R1 = 39.1 k
R1
39.1R2
= 7.6 ( 39.1 7.6 ) R2 = ( 7.6 )( 39.1) R2 = 9.43 k
39.1 + R2

b.
2
2
1
1
( 0.9 I CQ ) RL = ( 0.9 )( 8 ) (1.5 ) PL = 38.9 mW
2
2
PS = VCC I CQ = (12 )( 8 ) = 96 mW

PL =

PQ = PS PL = 96 38.9 PQ = 57.1 mW

PL
PS

38.9
= 40.5%
96

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TYU8.8
10 3
= 0.73643 V
(a) BEn = (0.026) ln
16
5 10
10 3
= 0.72421 V
EBp = (0.026) ln
16
8 10
V BB = BEn + EBp = 1.4606 V

(b) See above

(c) I = BEn
or

V BB
1.4606
= 0.73643
2
2

I = 6.1 mV
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Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
TYU8.9

I E = I E 3 + IC 4 + IC 5
= I E 3 + IC 4 + 5 I B5

= I E 3 + 4 I B 4 + 5 (1 + 4 ) I B 4
I E = (1 + 3 ) I B 3 + 4 3 I B 3 + 5 (1 + 4 ) 3 I B 3

If 4 and 5 are large, then I E 3 4 5 I B 3

3 4 5
So that composite current gain is
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