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KTD1624

This document provides technical data for the KTD1624 epitaxial planar NPN transistor including: - Maximum ratings for collector-base voltage, collector-emitter voltage, emitter-base voltage, collector current, junction temperature, and storage temperature range. - Dimensions of the SOT-89 packaged transistor. - Electrical characteristics including current gain, saturation voltages, transition frequency, and output capacitance. - Graphs of collector current vs. collector-emitter voltage, current gain vs. collector current, and other performance parameters.

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174 views4 pages

KTD1624

This document provides technical data for the KTD1624 epitaxial planar NPN transistor including: - Maximum ratings for collector-base voltage, collector-emitter voltage, emitter-base voltage, collector current, junction temperature, and storage temperature range. - Dimensions of the SOT-89 packaged transistor. - Electrical characteristics including current gain, saturation voltages, transition frequency, and output capacitance. - Graphs of collector current vs. collector-emitter voltage, current gain vs. collector current, and other performance parameters.

Uploaded by

ricardo_Massis
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SEMICONDUCTOR

TECHNICAL DATA
VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT FEATURES
Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Complementary to KTB1124.
D K F F D A H

KTD1624
EPITAXIAL PLANAR NPN TRANSISTOR

J B E

MAXIMUM RATING (Ta=25)


CHARACTERISTIC Collector-Base Voltage Vollector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current(Pulse) Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICP PC PC* Tj Tstg RATING 60 50 6 3 6 500 1 150 -55150 UNIT V V V A A mW W

DIM A B C D E F G H J K

MILLIMETERS 4.70 MAX _ 0.20 2.50 + 1.70 MAX 0.45+0.15/-0.10 4.25 MAX _ 0.10 1.50 + 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05

1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER

SOT-89

Marking
h FE Rank Lot No.

ELECTRICAL CHARACTERISTICS (Ta=25)


CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Turn-on Time Switching Time Storage Time Fall Time Note : hFE (1) Classification A:100200, SYMBOL ICBO IEBO hFE(1) (Note) hFE (2) VCE(sat) VBE(sat) fT Cob ton tstg tf B:140280, TEST CONDITION VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=100 VCE=2V, IC=3A IC=2A, IB=100 IC=2A, IB=100 VCE=10V, IC=50 VCB=10V, f=1, IE=0
PW=20s DC < = 1% INPUT I B1 R8 I B2 25

MIN. 100 35 -

Y
TYP. 0.19 0.94 150 25 70 650 35 MAX. 1 1 400 0.5 1.2 nS V V

* : Package mounted on ceramic substrate(250mm20.8t)

Type Name

UNIT.

VR 50

100 -5V 10IB1=-10I B2 =I C =1A

470 25V

C:200400

2001. 12. 6

Revision No : 4

1/3

KTD1624

I C - V CE
5.0 COLLECOTR CURRENT I C (A) 4.0 3.0 2.0 1.0 0 0 0.4 0.8 1.2 1.6 COLLECTOR CURRENT I C (A)
100mA 80mA 60mA 40mA 20mA 10mA 5mA

I C - V BE
3.2 2.8 2.4 2.0
Ta=7 5 C 25 C -25 C

VCE =2V

1.6 1.2 0.8 0.4 0 0 0.2 0.4 0.6

I B =0

2.0

0.8

1.0

1.2

COLLECTOR-EMITTER VOLTAGE VCE (V)

BASE EMITTER VOLTAGE V BE (V)

I C - V CE
2.0 COLLECTOR CURRENT I C (A) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2 4 6 8 10 12 14 16
8mA

h FE - I C
1k DC CURRENT GAIN h FE 500 300
VCE =2V

7mA 6mA 5mA 4mA 3mA 2mA 1mA I B =0

100 50 30

18

20

10 0.01

0.03

0.1

0.3

10

COLLECTOR EMITTER VOLTAGE V CE (V)

COLLECTOR CURRENT I C (A)

V BE(sat) - I C
BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V)
I C /I B =20

V CE(sat) - I C
COLLECTOR EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1K 500 300
I C /I B =20

10 5 3

1 0.5 0.3
Ta=25 C

Ta=-25 C Ta=75 C

100 50 30
Ta=-25 C Ta=75 C Ta=25 C

0.1 0.01

0.03

0.1

0.3

10

10 0.01

0.03

0.1

0.3

10

COLLECTOR CURRENT I C (A)

COLLECTOR CURRENT I C (A)

2001. 12. 6

Revision No : 4

2/3

KTD1624

C ob - V CB
GAIN-BANDWIDTH PRODUCT f T (MHz) OUTPUW CAPACITANCE C ob (pF) 100 50 30
f=1MHz

f T - IC
1k 500 300
V CE =10V

10 5 3

100 50 30

1 1 3 5 10 30 50 100 200 COLLECTOR BASE VOLTAGE V CB (V)

10 0.01

0.03

0.1

0.3

10

COLLECTOR CURRENT I C (A)

COLLECTOR POWER DISSIPATION PC (W)

P C - Ta
1.2 1.0 0.8 0.6 0.4 0.2 0
2 1 1 MOUNTED ON CERAMIC

SAFE OPERATING AREA


10 COLLECTOR CURRENT I C (A) 5 3 1 0.5 0.3 0.1 0.05 0.03
MOUNTED ON CERAMIC BOARD (250mm 2 x0.8t) Ta=25 C ONE PULSE I CP

SUBSTRATE (250mm 2 x0.8t) 2 Ta=25 C

s 1m s m 10 s 0m 10

I C MAX.

D C

pe

ra

tio n

20

40

60

80

100

120

140

160

AMBIENT TEMPERATURE Ta ( C)

0.02 0.1

0.3

10

30

100

COLLECTOR EMITTER VOLTAGE V CE (V)

2001. 12. 6

Revision No : 4

3/3

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

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