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Gunn Diode Main

TEDs are semiconductor devices made from compound semiconductors like gallium arsenide that operate using hot electrons with higher energy than thermal energy. The Gunn effect was discovered by J.B. Gunn and causes current passing through gallium arsenide to fluctuate periodically above a critical voltage due to differential negative resistance and a two-valley electron model. This effect is used in Gunn diodes, which can generate microwave oscillations through the formation and drift of high-field domains and are often used in radar transmitters and microwave receivers.

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Saumya Mohan
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342 views

Gunn Diode Main

TEDs are semiconductor devices made from compound semiconductors like gallium arsenide that operate using hot electrons with higher energy than thermal energy. The Gunn effect was discovered by J.B. Gunn and causes current passing through gallium arsenide to fluctuate periodically above a critical voltage due to differential negative resistance and a two-valley electron model. This effect is used in Gunn diodes, which can generate microwave oscillations through the formation and drift of high-field domains and are often used in radar transmitters and microwave receivers.

Uploaded by

Saumya Mohan
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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TEDs are semiconductor devices with no junctions and gates.

They are fabricated from compound semiconductors like GaAs, InP, CdTe etc. TEDs operate with hot electrons whose energy is much greater than the thermal energy.

Invented by J.B Gunn

Gunn Effect: Above some critical voltage (Corresponding to Electric field of 2k-4k V/cm) the current passing through n-type GaAs becomes a periodic fluctuating function of time. Frequency of oscillation is determined mainly by the specimen, not by the external circuit. Period of oscillation is inversely proportional to the specimen length and is equal to the transit time of electrons between the electrodes

The current waveform was produced by applying a voltage pulse of 16V and 10ns duration to an n-type GaAs of 2.5 x 10-3 cm length. The oscillation frequency was 4.5Ghz

Explanation for Gunn Effect: Ridley Watkins Hilsum (RWH) Theory Two concepts related with RWH Theory.
Differential negative resistance Two valley model

Fundamental concept of RWH Theory. Developed in bulk solid state III-V compound when a voltage is applied

Differential negative resistance make the sample electrically unstable.

Data for two valleys in GaAs

Conductivity of n-type GaAs:

e = Electron charge = Electron mobility


= Electron density in the lower valley = Electron density in the upper valley is the electron density

According to RWH theory, in order to exhibit negative resistance the energy band structure of semiconductor should satisfy
The energy difference between two valleys must be several times larger than the thermal energy (KT ~ 0.0259eV) The energy difference between the valleys must be smaller than the bandgap energy (Eg) Electron in lower valley must have a higher mobility and smaller effective mass than that of in upper valley

Possessed by GaAs, InP, CdTe etc

In GaAs, at electric fields exceeding the critical value of Ec 3.2 kV/cm the differential mobility is ve. When the field exceeds Ec and further increases, the electron drift velocity decreases.

Gunn Oscillation Mode:

Stable Amplification Mode

(f x L) = 107 cm/s and (n x L) > 1012 /cm2 Cyclic formation of High field domain
(f x L) = 107 cm/s and 1011/cm2 < (n x L) >1012/cm2

LSA Oscillation Mode


Bias-circuit

(f x L) >107 cm/s and 2 x 104 < (n/f) > 2 X105/cm2 (f x L) is small. L is very small. When E=Eth current falls as Gunn oscillation begins, leads to oscillation in bias circuit (1KHz to 100MHz)

Condition for successful domain drift: Transit time (L/vs) > Electric relaxation time Frequency of oscillation = vdom/Leff.

Gunn diode with a resistive circuit -> Voltage change across diode is constant-> Period of oscillation is the time required for the domain to drift from the cathode to anode. Not suitable for microwave applications because of low efficiency. Gunn diode with a resonant circuit has high efficiency.

There are three domain modes for Gunn oscillation modes. 1. Transit time domain mode, (Gunn mode)

2. Delayed domain mode

Here domain is collected while New domain cannot form until E rises above threshold again. , Also called inhibited mode. Efficiency: 20%

3. Quenched domain mode:


If bias field drops below Es, domain collapses before it reaches anode. When the bias field swings above Eth, a new domain starts and process repeats. Frequency of oscillation is determined by resonant circuit. Efficiency : 13%

Limited Space charge Accumulation Mode (LSA)

Most Important mode for Gunn oscillator. Domain is not allowed to form. Efficiency : 20%

Power: 1W (Between 4HHz and 16GHz) Gain Bandwidth product : >10dB Average gain : 1 12 dB Noise figure : 15 dB

In radar transmitters Air traffic control (ATC) and Industrial Telemetry Broadband linear amplifier Fast combinational and sequential logic circuit Low and medium power oscillators in microwave receivers As pump sources

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