HiPerFASTTM IGBTs

C2-Class
High Speed

VCES =
IC110 =
VCE(sat)
tfi(typ) =

IXGA16N60C2
IXGP16N60C2

600V
16A
3.0V
33ns

TO-263 AA (IXGA)

Symbol

Test Conditions

Maximum Ratings

VCES
VCGR

TJ = 25C to 150C
TJ = 25C to 150C, RGE = 1M

600
600

V
V

VGES
VGEM

Continuous
Transient

20
30

V
V

IC25
IC110
ICM

TC = 25C
TC = 110C
TC = 25C, 1ms

40
16
100

A
A
A

SSOA
(RBSOA)

VGE = 15V, TJ = 125C, RG = 22

Clamped Inductive load

ICM = 32
VCE VCES

PC

TC = 25C

150

-55 ... +150

150
-55 ... +150

C
C
C

1.13/10
10..65 / 2.2..14.6

Nm/lb.in.
N/lb.

TJ
TJM
Tstg
Md
FC

Mounting Torque (TO-220)

Mounting Force (TO-263)

TL
TSOLD

Maximum Lead Temperature for Soldering

1.6mm (0.062 in.) from Case for 10s

Weight

TO-263
TO-220

300
260

C
C

2.5
3.0

g
g

E
C (Tab)

TO-220AB (IXGP)

CE

G = Gate
E = Emitter

C (Tab)

C = Collector
Tab = Collector

Features
z
z
z

Optimized for Low Switching Losses

Square RBSOA
International Standard Packages

Advantages
z
z

High Power Density

Low Gate Drive Requirement

Applications
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)

Characteristic Values
Min.
Typ.
Max.

BVCES

IC

= 250A, VGE = 0V

600

VGE(th)

IC

= 250A, VCE = VGE

3.0

ICES

VCE = VCES,VGE = 0V
VCE = 0V, VGE = 20V

VCE(sat)

IC

V
5.5

15 A
250 A

TJ = 125C
IGES

100 nA

= 12A, VGE = 15V, Note1

3.0
TJ = 125C

2010 IXYS CORPORATION, All Rights Reserved

1.8

z
z
z
z
z
z

Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts

V
V

DS99142C(08/10)

IXGA16N60C2
IXGP16N60C2
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs

IC = 12A, VCE = 10V, Note 1

Cies
Coes
Cres

VCE = 25V, VGE = 0V, f = 1MHz

Characteristic Values
Min.
Typ.
Max.
8

TO-263 (IXGA) Outline

S

657
62
22

pF
pF
pF

25

nC

nC

13

nC

16
17
0.16
75
33

ns
ns
mJ
ns
ns

Eoff

0.09

0.16 mJ

td(on)
tri
Eon
td(off)
tfi
Eoff

16
18
0.27
115
100
0.27

ns
ns
mJ
ns
ns
mJ

0.50

0.83 C/W
C/W

Qg(on)
Qge

IC = 12A, VGE = 15V, VCE = 0.5 VCES

Qgc
td(on)
tri
Eon
td(off)
tfi

RthJC
RthCK

Inductive load, TJ = 25C

IC = 12A, VGE = 15V
VCE = 400V, RG = 22
Note 2

Inductive load, TJ = 125C

IC = 12A, VGE = 15V
VCE = 400V, RG = 22
Note 2

TO-220

1.
2.
3.
4.

Gate
Collector
Emitter
Collector
Bottom Side

Dim.

Millimeter
Min.
Max.

Inches
Min. Max.

A
b
b2

4.06
0.51
1.14

4.83
0.99
1.40

.160
.020
.045

.190
.039
.055

c
c2

0.40
1.14

0.74
1.40

.016
.045

.029
.055

D
D1

8.64
8.00

9.65
8.89

.340
.280

.380
.320

9.65

10.41

.380

.405

E1
e
L
L1
L2
L3
L4

6.22
2.54
14.61
2.29
1.02
1.27
0

8.13
BSC
15.88
2.79
1.40
1.78
0.13

.270
.100
.575
.090
.040
.050
0

.320
BSC
.625
.110
.055
.070
.005

TO-220 (IXGP) Outline

Notes:

1. Pulse test, t 300s, duty cycle, d 2%.

2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.

Pins:

1 - Gate 2 - Collector
3 - Emitter

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106

4,931,844
5,017,508
5,034,796

5,049,961
5,063,307
5,187,117

5,237,481
5,381,025
5,486,715

6,162,665
6,259,123 B1
6,306,728 B1

6,404,065 B1
6,534,343
6,583,505

6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

7,157,338B2

IXGA16N60C2
IXGP16N60C2
Fig. 2. Extended Output Characteristics @ T J = 25C

Fig. 1. Output Characteristics @ T J = 25C

24

11V

VGE = 15V
13V
12V

20

110
100

10V

80

16

12

IC - Amperes

IC - Amperes

VGE = 15V

90

9V

8V

14V

70

13V

60

12V

50

11V

40
30

10V

20

4
7V
6V

0
0.0

0.5

1.0

1.5

2.0

2.5

9V

10

8V
7V

3.0

3.5

10

20

25

30

125

150

Fig. 4. Dependence of VCE(sat) on

Junction Temperature

Fig. 3. Output Characteristics @ T J = 125C

1.4

24
VGE = 15V
13V
12V
11V

VGE = 15V

1.3
10V

VCE(sat) - Normalized

20

IC - Amperes

15

VCE - Volts

VCE - Volts

16
9V
12

8V

7V

1.2

= 24A

= 12A

1.1
1.0
0.9
0.8
0.7

6V

= 6A

0.6

0
0

0.5

1.5

2.5

3.5

25

50

VCE - Volts

75

100

TJ - Degrees Centigrade

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

Fig. 6. Input Admittance

35

6.0
TJ = 25C

5.5

30

5.0
25

IC - Amperes

VCE - Volts

4.5
4.0
3.5

= 24A

3.0

20
TJ = - 40C
25C
125C

15
10

12A

2.5

2.0

6A

1.5

0
7

10

11

12

VGE - Volts

2010 IXYS CORPORATION, All Rights Reserved

13

14

15

VGE - Volts

10

11

IXGA16N60C2
IXGP16N60C2
Fig. 7. Transconductance

Fig. 8. Gate Charge

16

16
TJ = - 40C

VCE = 300V

14

12

25C

12

10

125C

10

VGE - Volts

g f s - Siemens

14

8
6

I C = 12A
I G = 10mA

8
6

2
0

0
0

10

15

20

25

30

35

Fig. 9. Capacitance

16

20

24

28

Fig. 10. Reverse-Bias Safe Operating Area

35

10,000

f = 1 MHz

30
25
Cies

1,000

IC - Amperes

Capacitance - PicoFarads

12

QG - NanoCoulombs

IC - Amperes

Coes
100

20
15
10

Cres

TJ = 125C
5
0
100

10
0

10

15

20

25

30

35

40

RG = 22
dv / dt < 10V / ns

150

200

250

VCE - Volts

300

350

400

450

500

550

600

650

VCE - Volts

Fig. 11. Maximum Transient Thermal Impedance

Z (th)JC - C / W

0.1

0.01
0.00001

0.0001

0.001

0.01

Pulse Width - Seconds

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

0.1

10

IXGA16N60C2
IXGP16N60C2
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0.9

---

TJ = 125C , VGE = 15V

VCE = 400V

0.7

1.4

0.6

1.2
1

0.5

0.8

0.4

0.6

0.3

0.4
I

20

30

40

50

60

70

80

0.5
0.4

TJ = 125C

0.3

0.2

0.1

0
12

13

14

15

16

17

RG - Ohms

VCE = 400V

I C = 24A

130

0.7

125

0.6

120

0.5

0.4

0.4

0.3

0.3

0.2

I C = 12A

0.1
0
35

45

55

65

75

85

95

105

115

Eon - MilliJoules

0.5

25

tfi

td(off) - - - -

VCE = 400V

115

240

110

105

90
20

140

160

130

140

120

120

60

80
70

TJ = 25C

20

60

50
19

20

21

IC - Amperes

2010 IXYS CORPORATION, All Rights Reserved

22

23

24

t f i - Nanoseconds

t f i - Nanoseconds

100

18

160

= 12A

80

90

17

95

80

16

200

= 24A

0.1

110
TJ = 125C

15

280

30

40

50

60

70

80

40
100

90

Fig. 17. Inductive Turn-off Switching Times vs.

Junction Temperature
tfi

td(on) - - - -

130
120

RG = 22 , VGE = 15V
VCE = 400V

110

100

100

I C = 24A, 12A

80

90

60

80

40

70

20

60

0
25

35

45

55

65

75

85

TJ - Degrees Centigrade

95

105

115

50
125

t d(off) - Nanoseconds

120

14

320

120

t d(off) - Nanoseconds

VCE = 400V

13

24

RG - Ohms

tfi

12

td(off) - - - -

TJ = 125C, VGE = 15V

RG = 22 , VGE = 15V

40

23

100

0
125

180

100

22

0.2

Fig. 16. Inductive Turn-off Switching Times vs.

Collector Current

140

21

360

TJ - Degrees Centigrade

160

20

t d(off) - Nanoseconds

0.8

t f i - Nanoseconds

----

RG = 22 , VGE = 15V

0.6

Eoff - MilliJoules

Eon

19

Fig. 15. Inductive Turn-off Switching Times vs.

Gate Resistance

0.8
Eoff

18

IC - Amperes

Fig. 14. Inductive Switching Energy Loss vs.

Junction Temperature

0.7

0.2

TJ = 25C

0.1

0
100

90

0.6

VCE = 400V

0.3

0.2

0.1

----

RG = 22 , VGE = 15V

0.4

= 12A

0.2

Eon

0.7

Eon - MilliJoules

0.6

Eoff

0.5

Eon - MilliJoules

I C = 24A

Eoff - MilliJoules

0.7

Eoff - MilliJoules

Eon -

Eoff

0.8

1.6

Fig. 13. Inductive Switching Energy Loss vs.

Collector Current

IXGA16N60C2
IXGP16N60C2
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current

Fig. 18. Inductive Turn-on Switching Times vs.

Gate Resistance
90

50

55

tri

80

td(on) - - - -

45

= 24A

45

40

60

40

50

35

40

30

30

25

= 12A

t r i - Nanoseconds

t d(on) - Nanoseconds

t r i - Nanoseconds

VCE = 400V

25

16.5

20

16.0
15.5

15

15

10
100

10

40

50

60

70

80

90

17.5

TJ = 25C, 125C

17.0

10

30

18.0

30

20

20

VCE = 400V

35

20

18.5

RG = 22 , VGE = 15V

TJ = 125C, VGE = 15V

70

td(on) - - - -

t d(on) - Nanoseconds

50

19.0

tri

15.0
12

13

14

15

16

17

18

19

20

21

22

23

24

IC - Amperes

RG - Ohms

Fig. 20. Inductive Turn-on Switching Times vs.

Junction Temperature
55

19.5

tri

50
45

VCE = 400V

40

19.0
18.5
18.0

35

= 24A

17.5

30

17.0

25

16.5

20

16.0
I C = 12A

15

15.5

10
25

35

45

55

65

t d(on) - Nanoseconds

t r i - Nanoseconds

td(on) - - - -

RG = 22 , VGE = 15V

75

85

95

105

115

15.0
125

TJ - Degrees Centigrade

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS REF: IXG_16N60C3D1(3D)7-29-10