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TO-92 Plastic-Encapsulate Transistors: Jiangsu Changjiang Electronics Technology Co.,Ltd

1. This document provides specifications for a TO-92 plastic-encapsulated NPN transistor from Jiangsu Changjiang Electronics Technology. 2. The transistor has a maximum power dissipation of 0.75W at 25°C, can handle currents up to 5A for the collector and 10mA for the emitter and base. It has breakdown voltages of 42V, 22V, and 6V for collector-base, collector-emitter, and emitter-base respectively. 3. Dimensions for the TO-92 transistor package are provided in millimeters and inches.

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Danghung Ta
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117 views

TO-92 Plastic-Encapsulate Transistors: Jiangsu Changjiang Electronics Technology Co.,Ltd

1. This document provides specifications for a TO-92 plastic-encapsulated NPN transistor from Jiangsu Changjiang Electronics Technology. 2. The transistor has a maximum power dissipation of 0.75W at 25°C, can handle currents up to 5A for the collector and 10mA for the emitter and base. It has breakdown voltages of 42V, 22V, and 6V for collector-base, collector-emitter, and emitter-base respectively. 3. Dimensions for the TO-92 transistor package are provided in millimeters and inches.

Uploaded by

Danghung Ta
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

,LTD

TO-92 Plastic-Encapsulate Transistors

D965
FEATURES

TRANSISTOR NPN

TO 92

1.EMITTER

Power dissipation PCM : 0.75 WTamb=25 Collector current ICM : 5 A Collector-base voltage V(BR)CBO : 42 V Operating and storage junction temperature range T J T stg: -55 to +150 ELECTRICAL CHARACTERISTICS Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE1 DC current gain HFE2 HFE3 Collector-emitter saturation voltage VCE(sat)

2. COLLECTOR

3. BASE

1 2 3

unless
Test

otherwise
MIN 42 22 6

specified
TYP MAX UNIT V V V 0.1 0.1

conditions

Ic=1A IE=0 Ic= 1 IE= 10 mA IB=0

A IC=0

VCB= 30 V , IE=0 VEB= 6 V IC=0 VCE= 2 V, mA VCE= 2V, VCE= 2V, mA IC= 0.15 150 340 150

A A

IC = 500 mA IC = 2000

950

IC=3000mA,IB=100 mA

0.35

CLASSIFICATION OF H FE(2)
Rank Range R 340-600 T 560-950

TO-92 PACKAGE OUTLINE DIMENSIONS

D1

A1

e e1

Symbol A A1 b c D D1 E e e1 L

Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.000 2.640 14.500 1.600 0.380 4.700 Max 3.700 1.400 0.550 0.510 4.700 Min

Dimensions In Inches Max 0.146 0.055 0.022 0.020 0.185 0.185 0.050TYP 0.096 0.555 0.000 0.104 0.571 0.063 0.015 0.130 0.043 0.015 0.014 0.173 0.135 0.169

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