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Gla University Lab:-Simulation Lab (ECE-287) / Quiz-3

The document is a quiz about transistor configurations and characteristics: 1. It asks questions about the leakage current ICBO, the doping of transistor emitters, and the path of electrons in a properly biased NPN transistor. 2. Questions are also asked about how the reverse saturation current ICO changes with temperature and what transistor characteristics can be determined from collector characteristics. 3. The quiz finishes with questions about temperature dependence of different configurations, advantages of CE amplification over CB, characteristics of the CE configuration, configurations with unit voltage gain, and leakage current in the CE configuration.

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Vani Bindal Agarwal
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40 views

Gla University Lab:-Simulation Lab (ECE-287) / Quiz-3

The document is a quiz about transistor configurations and characteristics: 1. It asks questions about the leakage current ICBO, the doping of transistor emitters, and the path of electrons in a properly biased NPN transistor. 2. Questions are also asked about how the reverse saturation current ICO changes with temperature and what transistor characteristics can be determined from collector characteristics. 3. The quiz finishes with questions about temperature dependence of different configurations, advantages of CE amplification over CB, characteristics of the CE configuration, configurations with unit voltage gain, and leakage current in the CE configuration.

Uploaded by

Vani Bindal Agarwal
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOC, PDF, TXT or read online on Scribd
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GLA UNIVERSITY Lab:- Simulation Lab(ECE-287)/ ui!-" Name:. Branch/Sec.: .. . 1.

The leakage current ICBO flows in (a) The emitter, base and collector leads (c) The emitter and collector leads. 2.

Class Roll No.:

(b) The emitter and base leads. (d) The base and collector leads.

The emitter of the transistor is generall do!ed the hea"iest because it (b) has to su!!l the charge carriers (d) must !ossess low resistance

(a) has to dissi!ate ma#imum !ower (c) is the first region of transistor $.

In a !ro!erl Biased %&% transistor most of the electrons from the emitter (b) recombine in the emitter its self (d) are sto!!ed b the 'unction barrier

(a) recombine with holes in the base (c) !ass through the base to the collector (.

In a transistor am!lifier, the re"erse saturation current ICO

(a) double for e"er 1)) rise in tem!erature (b) doubles for e"er 1) rise in tem!erature (c) increase linearl with the tem!erature (d) doubles for e"er *) rise in tem!erature *. used to The collector characteristics of a common+ emitter connected transistor ma be

find its (a) in!ut resistance ,. (b) base current (c) out!ut resistance (d) "oltage gain

-hich of the following transistor configuration circuit is much less tem!erature

de!endent. (a) common base /. (b) common emitter (c) common collector (d) none of the abo"e

The C0 am!lifier circuit is !referred o"er CB am!lifier circuit because the ha"e

(a) lower am!lification factor

(b) larger am!lification factor

(c) high in!ut resistance and low out!ut resistance (d) none of these 1. 2 transistor when connected in C0 mode has (a) a low in!ut resistance and a low out!ut resistance (b) a high in!ut resistance and high out!ut resistance (c) a high in!ut resistance and low out!ut resistance (d) a medium in!ut resistance and high out!ut resistance 3. -hich configuration has unit "oltage gain (ideal) (a) Common Collector (CC) (c) Common Base (CB) (b) a Common 0mitter (C0) (d) C0 followed b CB

1). 4eakage current in C0 configuration is (a) "er high (b) "er small (c) normal (d) not !resent

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