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Sss7n60a Transistor

This document provides detailed specifications and performance characteristics for an N-channel power MOSFET. It includes maximum ratings, electrical characteristics, output/transfer characteristics graphs, and test circuits. Key information discussed includes breakdown voltage, on-resistance, gate charge, safe operating area, and thermal performance over temperature.

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death914
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158 views

Sss7n60a Transistor

This document provides detailed specifications and performance characteristics for an N-channel power MOSFET. It includes maximum ratings, electrical characteristics, output/transfer characteristics graphs, and test circuits. Key information discussed includes breakdown voltage, on-resistance, gate charge, safe operating area, and thermal performance over temperature.

Uploaded by

death914
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Q Avalanche Rugged Technology

Q Rugged Gate Oxide Technology


Q Lower nput Capacitance
Q mproved Gate Charge
Q Extended Safe Operating Area
Q Lower Leakage Current : 25 A (Max.) @ V
DS
= 600V
Q Lower R
DS(ON)
: 0.977 (Typ.)
Advanced Power MOSFET
ThermaI Resistance
Junction-to-Case
Junction-to-Ambient
R
JC
R
JA
Characteristic Max. Units SymboI Typ.
FEATURES
AbsoIute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 )
Continuous Drain Current (T
C
=100 )
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy


Avalanche Current
Repetitive Avalanche Energy


Peak Diode Recovery dv/dt


Total Power Dissipation (T
C
=25 )
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 " from case for 5-seconds
Characteristic VaIue Units SymboI

DM
V
GS
E
AS

AR
E
AR
dv/dt

D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W

A

V
DSS
V

1.Gate 2. Drain 3. Source


3
2
1

BV
DSS
= 600 V
R
DS(on)
= 1.2

D
= 4 A
600
4
2.5
28

611
4
4.8
3.0
48
0.38
- 55 to +150
300
2.6
62.5
--
--

_
O
1
O
2
O
3
O
1
O
1
o
C
o
C
o
C
o
C

T

T
:
:
P

o
C
o
C/W
N-CHANNEL
POWER MOSFET
EIectricaI Characteristics (T
C
=25 unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic SymboI Max. Units Typ. Min. Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
nput Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain("Miller) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
BV
DSS

BV/ T
J

V
GS(th)
R
DS(on)

GSS

DSS
V

V
nA
A


pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,
D
=250 A

D
=250 A See Fig 7
V
DS
=5V,
D
=250 A
V
GS
=30V
V
GS
=-30V
V
DS
=600V
V
DS
=480V,T
C
=125
V
GS
=10V,
D
=2A


V
DS
=50V,
D
=2A
V
DD
=300V,
D
=7A,
R
G
=9.1
See Fig 13
V
DS
=480V,V
GS
=10V,

D
=7A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge

SM
V
SD
t
rr
Q
rr
Characteristic SymboI Max. Units Typ. Min. Test Condition
--
--
--
--
--
A
V
ns
C
ntegral reverse pn-diode
in the MOSFET
T
J
=25 ,
S
=4A,V
GS
=0V
T
J
=25 ,
F
=7A
di
F
/dt=100A/ s

600
--
2.0
--
--
--
--
--
0.65
--
--
--
--
--
130
53
18
19
72
28
49
8.4
22.1
--
--
4.0
100
-100
25
250
1.2
--
1500
150
62
45
50
155
65
65
--
--
4.37
1150
--
--
--
415
3.8
4
28
1.4
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=70mH,
AS
=4A, V
DD
=50V, R
G
=27 , Starting T
J
=25

SD
7A, di/dt 120A/ s, V
DD
BV
DSS
, Starting T
J
=25
Pulse Test : Pulse Width = 250 s, Duty Cycle 2%
Essentially ndependent of Operating Temperature
<_ <_ <_
<_
O
1
O
2
O
3
O
4
O
5
o
C
V/
o
C
P
P
P
P P
:
o
C
o
C P
P
O
1
O
4
O
4
o
C
o
C
O
4
O
4
O
5
O
4
O
4
O
5
:
:
:
o
C
P ' '
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source VoItage Fig 5. Capacitance vs. Drain-Source VoItage
Fig 4. Source-Drain Diode Forward VoItage Fig 3. On-Resistance vs. Drain Current

10
-1
10
0
10
1
10
-1
10
0
10
1
@ Notes :
1. 250 Ps Pulse Test
2. T
C
= 25
o
C
V
GS
Top : 15V
10 V
8.0 V
7.0 V
6.0 V
5.5V
5.0 V
Bottom: 4.5V
I


,

D
r
a
i
n

C
u
r
r
e
n
t


[
A
]
V

, Drain-Source Voltage [V]


2 4 6 8 10
10
-1
10
0
10
1
25
o
C
150
o
C
- 55
o
C
@ Notes :
1. V
GS
= 0 V
2. V
DS
= 50 V
3. 250 Ps Pulse Test
I


,

D
r
a
i
n

C
u
r
r
e
n
t


[
A
]
V

, Gate-Source Voltage [V]


0 5 10 15 20 25 30
0.0
0.5
1.0
1.5
2.0
2.5
@ Note : T
J
= 25
o
C
V
GS
= 20 V
V
GS
= 10 V
R


,

[
:
]
D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e
I

, Drain Current [A]


0.4 0.6 0.8 1.0 1.2
10
-1
10
0
10
1
150
o
C
25
o
C
@ Notes :
1. V
GS
= 0 V
2. 250 Ps Pulse Test
I


,

R
e
v
e
r
s
e

D
r
a
i
n

C
u
r
r
e
n
t


[
A
]
V

, Source-Drain Voltage [V]


10
0
10
1
0
500
1000
1500
2000
C
iss
= C
gs
+ C
gd
(

C
ds
= shorted

)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
@ Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
a
p
a
c
i
t
a
n
c
e


[
p
F
]
V

, Drain-Source Voltage [V]


0 10 20 30 40 50
0
5
10
V
DS
= 480 V
V
DS
= 300 V
V
DS
= 120 V
@ Notes : I
D
= 7.0 A
V


,

G
a
t
e
-
S
o
u
r
c
e

V
o
l
t
a
g
e


[
V
]
Q

, Total Gate Charge [nC]


N-CHANNEL
POWER MOSFET
Fig 7. Breakdown VoItage vs. Temperature Fig 8. On-Resistance vs. Temperature
Fig 11. ThermaI Response
Fig 10. Max. Drain Current vs. Case Temperature Fig 9. Max. Safe Operating Area

-75 -50 -25 0 25 50 75 100 125 150 175


0.8
0.9
1.0
1.1
1.2
@ Notes :
1. V
GS
= 0 V
2. I
D
= 250 PA
B
V


,

(
N
o
r
m
a
l
i
z
e
d
)
D
r
a
i
n
-
S
o
u
r
c
e

B
r
e
a
k
d
o
w
n

V
o
l
t
a
g
e
T

, Junction Temperature [

C]
-75 -50 -25 0 25 50 75 100 125 150 175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
@ Notes :
1. V
GS
= 10 V
2. I
D
= 3.5 A
R


,

(
N
o
r
m
a
l
i
z
e
d
)
D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e
T

, Junction Temperature [

C]
25 50 75 100 125 150
0
1
2
3
4
5
I


,

D
r
a
i
n

C
u
r
r
e
n
t


[
A
]
T

, Case Temperature [

C]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
single pulse
0.2
0.1
0.01
0.02
0.05
D=0.5
@ Notes :
1. Z
TJC
(t)=2.6
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
-T
C
=P
DM
*Z
T JC
(t)
Z
T

(
t
)

,


T
h
e
r
m
a
l

R
e
s
p
o
n
s
e
t

, Square Wave Pulse Duration [sec]


10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
10 Ps
100 ms
DC
100 Ps
1 ms
10 ms
@ Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
Operation in This Area
is Limited by R
DS(on)
I


,

D
r
a
i
n

C
u
r
r
e
n
t


[
A
]
V

, Drain-Source Voltage [V]


N-CHANNEL
POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
Fig 13. Resistive Switching Test Circuit & Waveforms
Fig 14. UncIamped Inductive Switching Test Circuit & Waveforms
E
AS
L
L
I
AS
2
----
2
1
--------------------
BV
DSS
-- V
DD
BV
DSS
V
in
V
out
10
90
t
d(on)
t
r
t
on
t
oII
t
d(oII)
t
I
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
Vary t

to obtain
required peak I

10V
V
DD
C
L
L
V
DS
I
D
R
G
t
p
DUT
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
V
DD
( 0.5 rated V

)
10V
V
out
V
in
R
L
DUT
R
G
V
DS
3mA
V
GS
Current SampIing (I

)
Resistor
Current SampIing (I

)
Resistor
DUT
300nF
50K:
200nF 12V
Same Type
as DUT
' Current ReguIator
R
1
R
2

N-CHANNEL
POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
V

--
L

I

Driver
V

Same Type
as DUT
V

dv/dt controlled by 'R

controlled by Duty Factor 'D


V

10V
V

( Driver )
I

( DUT )
V

( DUT )
V

Body Diode
Forward Voltage Drop
V

, Body Diode Forward Current


Body Diode Reverse Current
I

Body Diode Recovery dv/dt


di/dt
D
Gate Pulse Width
Gate Pulse Period
--------------------------

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