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TO-251/252 Plastic-Encapsulate D Transistors: Electronics

This document provides specifications for TO-251/252 plastic-encapsulated NPN transistors. It lists key electrical characteristics including maximum power dissipation of 1.25W, collector current of 3A, and collector-base breakdown voltage of 40V. It also provides typical minimum, maximum, and unit measurements for parameters like current gain, saturation voltages, and transition frequency. The document classifies current gain into ranks and specifies the temperature range for operating and storage.

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Tessy Lusiana Dinar
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42 views

TO-251/252 Plastic-Encapsulate D Transistors: Electronics

This document provides specifications for TO-251/252 plastic-encapsulated NPN transistors. It lists key electrical characteristics including maximum power dissipation of 1.25W, collector current of 3A, and collector-base breakdown voltage of 40V. It also provides typical minimum, maximum, and unit measurements for parameters like current gain, saturation voltages, and transition frequency. The document classifies current gain into ranks and specifies the temperature range for operating and storage.

Uploaded by

Tessy Lusiana Dinar
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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TO-251/252 Plastic-Encapsulated Transistors

D882 TRANSISTOR (NPN)



FEATURES

Power dissipation
P
CM
: 1.25 W (Tamb=25)
Collector current
I
CM:
3 A
Collector-base voltage
V
(BR)CBO
: 40 V
Operating and storage junction temperature range
T
J
, T
stg
: -55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test condi ti ons MIN TYP MAX UNIT
Col l ector-base breakdown vol tage V(BR)CBO Ic=100A, IE=0 40 V
Col l ector-emitter breakdown voltage V(BR)CEO Ic=10 mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 6 V
Collector cut-off current ICBO VCB=40V, IE=0 1 A
Collector cut-off current ICEO VCE=30V, IB=0 10 A
Emitter cut-off current IEBO VEB=6V, IC=0 1 A
hFE(1) VCE=2V, IC=1A 60 400
DC current gai n
hFE(2) VCE=2V, IC=100mA 32
Col l ector-emitter saturati on vol tage VCE (sat) IC=2A, IB=0.2 A 0.5 V
Base-emitter saturati on vol tage VBE (sat) IC=2A, IB=0.2 A 1.5 V
Transi ti on frequency fT
VCE=5V, Ic=0.1A
f =10MHz
50 MHz

CLASSIFICATION OF h
FE(1)

Rank R O Y GR
Range 60-120 100-200 160-320 200-400












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TO-251
TO-252-2



1. BASE

2. COLLECTOR

3. EMITTER
Transys
Electronics
L I M I T E D

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