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Features: Elektronische Bauelemente - 0.15A, - 50V PNP Plastic-Encapsulated Transistor

This document provides specifications for a PNP plastic-encapsulated transistor. It lists the part number, ratings, features, electrical characteristics, and dimensions. Key specifications include a collector current rating of -150mA, collector-emitter voltage rating of -50V, DC current gain range of 70-400, and transition frequency above 80MHz. Dimensional drawings and characteristic curves are also included.

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43 views

Features: Elektronische Bauelemente - 0.15A, - 50V PNP Plastic-Encapsulated Transistor

This document provides specifications for a PNP plastic-encapsulated transistor. It lists the part number, ratings, features, electrical characteristics, and dimensions. Key specifications include a collector current rating of -150mA, collector-emitter voltage rating of -50V, DC current gain range of 70-400, and transition frequency above 80MHz. Dimensional drawings and characteristic curves are also included.

Uploaded by

uongquocvu
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Elektronische Bauelemente

A1015
-0.15A , -50V
PNP Plastic-Encapsulated Transistor

04-Mar-2011 Rev. B Page 1 of 2

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

A
C E
K
F
D
B
G H
J
3
Base
1
Emitter
Collector
2

RoHS Compliant Product
A suffix of -C specifies halogen & lead-free


FEATURES
Power Dissipation


CLASSIFICATION OF h
FE
Product-Rank A1015-O A1015-Y A1015-GR
Range 70~140 120~240 200~400










ABSOLUTE MAXIMUM RATINGS (T
A
= 25C unless otherwise specified)
Parameter Symbol Rating Unit
Collector to Base Voltage VCBO -50 V
Collector to Emitter Voltage VCEO -50 V
Emitter to Base Voltage VEBO -5 V
Collector Current - Continuous IC -150 mA
Collector Power Dissipation PD 400 mW
Junction, Storage Temperature TJ, TSTG 125, -55~125 C

ELECTRICAL CHARACTERISTICS (T
A
= 25C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector to Base Breakdown Voltage V(BR)CBO -50 - - V IC= -100A, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO -50 - - V IC= -0.1mA, IB=0
Emitter to Base Breakdown Voltage V(BR)EBO -5 - - V IE= -100A, IC=0
Collector Cut-Off Current ICBO - - -0.1 A VCB= -50V, IE=0
Collector Cut-Off Current ICEO - - -0.1 A VCE= -50V, IB=0
Emitter Cut-Off Current IEBO - - -0.1 A VEB= -5V, IC=0
DC Current Gain hFE 70 - 400 VCE= -6V, IC= -2mA
Collector to Emitter Saturation Voltage VCE(sat) - - -0.3 V IC= -100mA, IB= -10mA
Base to Emitter Saturation Voltage VBE(sat) - - -1.1 V IC= -100mA, IB= -10mA
Transition Frequency fT 80 - - MHz VCE= -10V, IC= -1mA, f=30MHz
Collector Output Capacitance Cob - - 7 pF VCB= -10V, IE=0, f=1MHz
Noise Figure NF - - 6 dB
VCE= -6V, IC= -0.1mA, f=1KHz,
RG=10K

1 11 1Emitter
2 22 2Collector
3 33 3Base
TO-92
Millimeter
REF.
Min. Max.
A 4.40 4.70
B 4.30 4.70
C 12.70 -
D 3.30 3.81
E 0.36 0.56
F 0.36 0.51
G 1.27 TYP.
H 1.10 -
J 2.42 2.66
K 0.36 0.76



Elektronische Bauelemente
A1015
-0.15A , -50V
PNP Plastic-Encapsulated Transistor

04-Mar-2011 Rev. B Page 2 of 2

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.


CHARACTERISTIC CURVES

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