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Avalanche Diode

This datasheet provides specifications for DS 35 and DSA 35 rectifier diodes. The diodes have a VRRM rating of 800-1800V and can handle RMS currents up to 80A and average currents up to 49A. They use a DO-203 AB package and have minimum breakdown voltages that are equal to or greater than 80% of VRRM. Curves show forward voltage, surge overload capability, power dissipation over temperature, and thermal impedance characteristics. Maximum ratings and typical electrical values are also provided.

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46 views

Avalanche Diode

This datasheet provides specifications for DS 35 and DSA 35 rectifier diodes. The diodes have a VRRM rating of 800-1800V and can handle RMS currents up to 80A and average currents up to 49A. They use a DO-203 AB package and have minimum breakdown voltages that are equal to or greater than 80% of VRRM. Curves show forward voltage, surge overload capability, power dissipation over temperature, and thermal impedance characteristics. Maximum ratings and typical electrical values are also provided.

Uploaded by

gsalimr
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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DS 35

DSA 35

VRRM = 800-1800 V
IF(RMS) = 80 A
IF(AV)M = 49 A

Rectifier Diode
Avalanche Diode

VRSM

V(BR)min VRRM

Anode

Cathode

on stud

on stud

900
1300

800
1200

DS 35-08A
DS 35-12A

DSI 35-08A
DSI 35-12A

1300
1700
1900

1300
1750
1950

1200
1600
1800

DSA 35-12A
DSA 35-16A
DSA 35-18A

DSAI 35-12A
DSAI 35-16A
DSAI 35-18A

DO-203 AB
C
A

DS
DSA

A = Anode

Symbol

Test Conditions

IF(RMS)
IF(AVM)

TVJ = TVJM
Tcase = 100C; 180 sine

80
49

A
A

PRSM

DSA(I) types, TVJ = TVJM, tp = 10 ms

11

kW

IFSM

TVJ = 45C;
VR = 0

t = 10 ms (50 Hz), sine


t = 8.3 ms (60 Hz), sine

650
690

A
A

TVJ = TVJM
VR = 0

t = 10 ms (50 Hz), sine


t = 8.3 ms (60 Hz), sine

600
640

A
A
2

It

DSI
DSAI

C = Cathode

Maximum Ratings

t = 10 ms (50 Hz), sine


t = 8.3 ms (60 Hz), sine

2100
2000

As
A2s

TVJ = TVJM
VR = 0

t = 10 ms (50 Hz), sine


t = 8.3 ms (60 Hz), sine

1800
1700

A2s
A2s

-40...+180
180
-40...+180

C
C
C

Mounting torque

4.5-5.5
40-49
15

Weight

Nm
lb.in.
g

Symbol

Test Conditions

IR

TVJ = TVJM; VR = VRRM

VF

IF

1.55

VT0
rT

For power-loss calculations only


TVJ = TVJM

0.85
4.5

V
mW

RthJC
RthJH

DC current
DC current

1.05
1.25

K/W
K/W

dS
dA
a

Creepage distance on surface


Strike distance through air
Max. allowable acceleration

4.05
3.9
100

mm
mm
m/s2

= 150 A; TVJ = 25C

Features
International standard package,
JEDEC DO-203 AB (DO-5)
Planar glassivated chips

TVJ = 45C
VR = 0

TVJ
TVJM
Tstg
Md

1/4-28UNF

Only for Avalanche Diodes

DSI 35
DSAI 35

Applications
High power rectifiers
Field supply for DC motors
Power supplies

Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits

Dimensions in mm (1 mm = 0.0394")

Characteristic Values
mA

Data according to IEC 60747


IXYS reserves the right to change limits, test conditions and dimensions

2000 IXYS All rights reserved

1-2

DS 35
DSA 35
1000

250

A
900

typ.

DSI 35
DSAI 35

10000

50Hz, 80% VRRM

VR = 0 V

8000
A2s

lim.
800

200
IF

6000
I2t

700

IFSM

4000

600

150

TVJ= 180C
TVJ= 25C

TVJ = 45C

500
400

100

TVJ = 180C

300

2000

TVJ = 45C

200

50

TVJ = 180C

100
0
0.5

1.0

1000

0
10-3

2.0 V

1.5
VF

Fig. 1 Forward characteristics

10-2

10-1
t

100

5 6 7 ms
8 910
t

Fig. 3 I2t versus time (1-10 ms)

Fig. 2 Surge overload current


IFSM: crest value, t: duration

60

100

RthJA :

80

50

1.5 K/W

PF

IF(AV)M

1.9 K/W

60

40

2.3 K/W

30

3.9 K/W

40
DC
180 sin
120
60
30

20

20

10

0
0

20

40

60

80 A

00

50

IF(AV)M

150 C 200

100

40

80

120

Tamb

Fig. 4 Power dissipation versus forward current and ambient temperature

160 C 200
Tcase

Fig. 5 Max. forward current at case


temperature 180 sine

2.0
K/W

RthJH for various conduction angles d:

1.6
ZthJH
1.2

0.8

RthJH (K/W)

DC
180
120
60
30

1.25
1.37
1.47
1.74
2.08

Constants for ZthJH calculation:


0.4

0.0
10-3

10-2

10-1

100

101
t

Fig. 6 Transient thermal impedance junction to heatsink

2000 IXYS All rights reserved

102

1
2
3
4

Rthi (K/W)

ti (s)

0.10
0.25
0.70
0.20

0.0012
0.1181
0.6540
2.0

2-2

This datasheet has been downloaded from:


www.DatasheetCatalog.com
Datasheets for electronic components.

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