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2N3502 2N3503 2N3504 2N3505: PNP Silicon Planar Epitaxial Transistors

This document provides specifications for four PNP silicon planar epitaxial transistors (2N3502, 2N3503, 2N3504, 2N3505) including mechanical dimensions, electrical characteristics, and maximum ratings. The transistors are designed for digital and analog applications at current levels up to 0.5 amps. Tables provide details on collector-base breakdown voltage, current gain, saturation voltage, transition frequency, and more. Packaging is provided in both TO-18 and TO-5 metal packages.

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48 views

2N3502 2N3503 2N3504 2N3505: PNP Silicon Planar Epitaxial Transistors

This document provides specifications for four PNP silicon planar epitaxial transistors (2N3502, 2N3503, 2N3504, 2N3505) including mechanical dimensions, electrical characteristics, and maximum ratings. The transistors are designed for digital and analog applications at current levels up to 0.5 amps. Tables provide details on collector-base breakdown voltage, current gain, saturation voltage, transition frequency, and more. Packaging is provided in both TO-18 and TO-5 metal packages.

Uploaded by

ovada
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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2N3502

2N3503
2N3504
2N3505
MECHANICAL DATA
Dimensions in mm (inches)

PNP SILICON PLANAR EPITAXIAL


TRANSISTORS

5.84 (0.230)
5.31 (0.209)

5.33 (0.210)
4.32 (0.170)

4.95 (0.195)
4.52 (0.178)

12.7 (0.500)
min.

FEATURES

0.48 (0.019)
0.41 (0.016)
dia.

SILICON PLANAR EPITAXIAL PNP


TRANSISTOR

2.54 (0.100)
Nom.

1
2

TO18 METAL PACKAGE


PIN 1 Emitter

PIN 2 Base

PIN 3 Collector

8 .8 9 (0 .3 5 )
9 .4 0 (0 .3 7 )

7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )

APPLICATIONS:

6 .1 0 (0 .2 4 0 )
6 .6 0 (0 .2 6 0 )

1 2 .7 0
(0 .5 0 0 )
m in .

These PNP silicon planar epitaxial trasistors


are designed for digital and analog
applications at current levels up 0.5 amps.

0 .8 9 m a x .
(0 .0 3 5 )
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
d ia .

5 .0 8 (0 .2 0 0 )
ty p .

2 .5 4
(0 .1 0 0 )

0 .6 6 (0 .0 2 6 )
1 .1 4 (0 .0 4 5 )
0 .7 1 (0 .0 2 8 )
0 .8 6 (0 .0 3 4 )

4 5

TO5 METAL PACKAGE


PIN 1 Emitter

PIN 2 Base

PIN 3 Collector

ABSOLUTE MAXIMUM RATINGS(TA = 25C unless otherwise stated)


Maximum Voltages
VCBO
VCEO
VEBO

Collector Base Voltage


Collector Emitter Voltage
Emitter Base Voltage

Maximum Power Dissipation


PD
PD

Total Dissipation @ 25C Case Temperature


Total Dissipation@ 25C Free Air Temperature

TJ

Storage Temperature
Operating Junction Temperature

Semelab plc.

Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.


E-mail: [email protected]
Website: http://www.semelab.co.uk

2N3503
2N3505
- 60V
-60V
-5V
2N3502
2N3503
3W
0.7 W

2N3502
2N3504
-45V
-45V
-5V
2N3504
2N3505
1.3 W
0.4 W

-65C to +200C
200C
Prelim. 4/99

2N3502
2N3503
2N3504
2N3505
ELECTRICAL CHARACTERISTICS (25C free air temperature unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
BVCBO
BVEBO
VCEO
ICES
ICBO(150)

hFE

Collector to Base
Breakdown Voltage
Emmiter to Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage

IC = 10mA

IE = 0

IE = 10mA

IC = 0

IC = 10mA

IB = 0

VBE(sat)

-60

2N3502 / 2N3504

-45

Max. Unit
V

-5
2N3503 / 2N3505

-60

2N3502 / 2N3504

-45

V
V

VCE = -50V VBE = 0

2N3503 / 2N3505

0.07

10

VCE = -30V VBE = 0

2N3502 / 2N3504

0.05

10

Collector Reverse

IE = 0

VCB = -50V

2N3503 / 2N3505

10

Current

t = 150C

VCB = -30V

2N3502 / 2N3504

10

IC = 10mA

VCE = -10V

140

270

IC = 50mA

VCE = -1.0V

115

160

IC = 1.0mA

VCE = -10 V

135

200

IC = 150mA VCE = -10V

100

150

VCE = -10V

80

120

50

70

50

100

Collector Cutoff Current

DC Current Gain

IC = 10mA

IC = 500mA VCE = -10 V

VCE(sat)

2N3503 / 2N3505

t = -55C

nA

mA

300
300

IC = 50mA

VCE = -1.0V

IC = 50mA

IB = 2.5mA

-0.08

-0.25

IC = 150mA IB = 15mA

-0.18

-0.4

IC = 500mA IB = 50mA

-0.5

-1.6

IC = 50mA

IB = 2.5mA

-0.9

-1.0

Base Saturation Voltage IC = 150mA IB = 15mA

-1.0

-1.3

Collector Saturation
Voltage

Transition Frequency

IC = 50mA

Cob

Output Capacitance

VCB = -10V IE = 0

ton

Turn On Time

toff

Turn Off Time

Semelab plc.

IC = 300mA

VCE = -20V

IB1 = 30mA

-2.0

IC = 500mA IB = 50mA
FT

f = 100MHZ

IB2 = -30mA

Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.


E-mail: [email protected]
Website: http://www.semelab.co.uk

2.50

4.5

8.0

30

40

65

100

pf
ns

Prelim. 4/99

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