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EC238 Electronics I: MOSFET DC and Biasing

This document discusses MOSFET biasing techniques including: 1) Fixed biasing where a transistor operates in saturation with a fixed gate voltage and drain current calculated. 2) Self biasing where a transistor's gate is connected to its drain in a diode configuration, ensuring saturation. The drain resistance is calculated to give a target drain current. 3) Voltage divider biasing where two resistors form a voltage divider to set the transistor's gate-source voltage, again ensuring saturation operation. Drain current and resistor values can be calculated. Example circuits demonstrate each technique and solutions are provided.

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Sara El-Gendy
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176 views9 pages

EC238 Electronics I: MOSFET DC and Biasing

This document discusses MOSFET biasing techniques including: 1) Fixed biasing where a transistor operates in saturation with a fixed gate voltage and drain current calculated. 2) Self biasing where a transistor's gate is connected to its drain in a diode configuration, ensuring saturation. The drain resistance is calculated to give a target drain current. 3) Voltage divider biasing where two resistors form a voltage divider to set the transistor's gate-source voltage, again ensuring saturation operation. Drain current and resistor values can be calculated. Example circuits demonstrate each technique and solutions are provided.

Uploaded by

Sara El-Gendy
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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EC238 Electronics I

Lecture 8
MOSFET DC and Biasing

Example 1

An enhancement NMOS transistor with


Vt= 0.7V has its source terminal
grounded and a 1.5V dc applied to the
gate. In what region does operate for
a)

VD = 0.5V

b)

VD = 0.9V

c)

VD=3V

Solution

a)

Triode

b)

Saturation

c)

Saturation

Example 2
If the transistor in example 1 has nCox
= 100 A/V2, W=10 m and L=1 m, find
the value of drain current when VD=0.5
and VD=3V.
Solution

a)

The transistor in triode mode

I D n Cox
ID
ID
3

b)

W
L

10
100 *
1
275A

ID= 320 A

1 2
(
V

V
)
V

VDS
GS
t
DS

0.8 * 0.5 0.52


2

Example 2
b)

Transistor in saturation mode

n Cox W
2

ID
(VGS Vt )
2
L
100 10
2
ID
[ 0 .8 ]
2
1
I D 320 A
4

Fixed bias Technique


The simplest of biasing arrangements for the MOSFET
Example: Calculate the bias current of M1 in Fig. 1, the
transistor is in saturation mode. Assume nCox = 100A/V2 ,
Vth = 0.4 V and VG =1V.

Solution

M1 in saturation region

Must check our assumption by calculating the drain potential:

Self bias Technique


Need only one DC battery

Example :Design the circuit shown to obtain a current ID


of 0.4mA. R and find the dc voltage VD. The NMOS
transistor have Vt= 2V, has nCox = 20 A/V2, L =10 m and
W=100 m. neglect the channel length modulation effect
Solution
(assume = 0)
VD= VG then transistor operates in
saturationregion.
C W
ID

ox

(V

GS

Vt ) 2

20 100
400 A

[VDS 2]2
2
10
6

VDS = 4 and 0 V

Self bias Technique


VDS = 4

RD

VDD VD

ID
10 4

15 K
0.4

o This is called: Diode-Connected MOSFET.


o It always works in saturation

Voltage Divider Bias

Same as BJT bias technique but IG =0 so

Example The PMOS in circuit shown is working in


saturation. The RG1 =2M, R2=3M, RD=6k and
VD=3V. Let the enhancement type PMOS transistor
have Vt= -1V, and Kp (W/L)= 1 mA/V2
Solution
o ID= VD/RD = 3/6 = 0.5mA
oSince transistor operates in saturation region
ID
0.5

n Cox W
2

GS

Vt ) 2

1
1 [VGS ( 1)]2
2

oVGS= 0 or -2
8

(V

Voltage Divider Bias


VGS = -2V = VG - VS
VS = 5V , VG = +3V

2M =

VGS
3V

Vt = -1V

3M =

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