Scribd
Upload
38 views

Faculty of Engineering: Lexandria Niversity

This document describes a lab exercise on analyzing the properties of MOSFET semiconductor devices. The objectives are to understand how the threshold voltage (VT) affects MOSFET turn on and how the transconductance parameter (KP) affects current. Students will use a MOSFET simulation to obtain characteristic curves and analyze parameters like channel length modulation, body effect, and mobility degeneration. They must deliver a report with sections on second order effects, lab procedures, results, and answering assignment questions.

Uploaded by

Abdalla Fathy
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
38 views

Faculty of Engineering: Lexandria Niversity

This document describes a lab exercise on analyzing the properties of MOSFET semiconductor devices. The objectives are to understand how the threshold voltage (VT) affects MOSFET turn on and how the transconductance parameter (KP) affects current. Students will use a MOSFET simulation to obtain characteristic curves and analyze parameters like channel length modulation, body effect, and mobility degeneration. They must deliver a report with sections on second order effects, lab procedures, results, and answering assignment questions.

Uploaded by

Abdalla Fathy
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 6

Alexandria University

Faculty of Engineering
Electrical Engineering Department

ECE 336: Semiconductor Devices


Lab#4: MOSFET

Objectives
The purpose of this exercise is to analyze the properties of the MOSFET,
understand the effect of each of the model parameters discussed in the
exercise.
By the end of this exercise you should be able to:
1. Explain the effect of VT on the turn on of the MOSFET
2. Explain the effect of KP on the current of the MOSFET.
3. Explain the 2nd order effects of the MOSFET device.

Requirements and Deliverables


In this exercise you are required to use the MOSFET device in simulation to
obtain its characteristic curves and analyze its various parameters.
You should deliver a technical report containing the following sections:
A survey on the second order effects of MOSFET device ( channel
length modulation, body effect, mobility degeneration etc )
Procedures: A description and snapshots of the lab procedures taken
from your PC,
Results: Numerical and graphical simulation results as requested
Comments: Your conclusion about the results and your answers for
the assignment questions.

MOSFET Device model:

Procedures:
1.

Connect the circuit as shown in the figure, using the Mbreakn


MOSFET model.

2. Edit the transistor model to LEVEL=3 KP= 20E-6 VTO=0.

3. Run DC sweep of V1 from 0 to 10V with 0.1V step and plot the drain
current of the transistor, what is the region the transistor is operating
in ?
4. Make VTO=1 and repeat the previous step, explain the change in the
output.
5. Make KP=100E-6 and repeat step 3, explain the change in the
output.
6. Set GAMMA=0 and run DC sweep + parametric sweep on V3 ( bulk
source voltage) from 0 to 5V with step 1V.
7. Set GAMMA=0.6 PHI=0.75 and repeat step 6, explain why there
was a change in this step not the first step ? what is the name of this
phenomenon ?
8. Set GAMMA back to zero, and run primary sweep on VDS from 0V
to 10V with 1V step and parametric sweep on VGS from 0V to 8V
with 2V step.
9. Set GAMMA=0.6 PHI=0.75 and repeat the step 8 and compare the
saturation current levels ( what is the condition of saturation ? ) and
exlain the results.
10. Run DC sweep on VGS from 0V to 10V with 1V step and run with it
parametric sweep on the parameter THETA = 0 0.1, comment on
the results.
11. Repeat step 8 and 9 but this time change the parameter THETA
(not gamma) to 0 and 0.1, explain the results.

You might also like