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Si1433DH: Vishay Siliconix

This document summarizes a new p-channel 30V MOSFET product from Vishay Siliconix. The MOSFET has a maximum drain-source voltage of 30V, an on-resistance as low as 0.15 ohms, and continuous drain current up to 2.2 amps. It is packaged in a thermally enhanced SC-70 6-lead package. The MOSFET is intended for applications such as load switches in notebook PCs and servers. Electrical and thermal characteristics are provided in tables and graphs.

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42 views

Si1433DH: Vishay Siliconix

This document summarizes a new p-channel 30V MOSFET product from Vishay Siliconix. The MOSFET has a maximum drain-source voltage of 30V, an on-resistance as low as 0.15 ohms, and continuous drain current up to 2.2 amps. It is packaged in a thermally enhanced SC-70 6-lead package. The MOSFET is intended for applications such as load switches in notebook PCs and servers. Electrical and thermal characteristics are provided in tables and graphs.

Uploaded by

seloca
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Si1433DH

New Product

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET


FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D Thermally Enhanced SC-70 Package

PRODUCT SUMMARY
VDS (V)

rDS(on) (W)

ID (A)

0.150 @ VGS = - 10 V

- 2.2

0.260 @ VGS = - 4.5 V

- 1.6

APPLICATIONS
D Load Switches
- Notebook PCs
- Servers

- 30

SOT-363
SC-70 (6-LEADS)
D

BE

XX

YY

Marking Code

Lot Traceability
and Date Code

Part # Code
Top View
Ordering Information: Si1433DH-T1

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


Parameter

Symbol

5 secs

Steady State

Drain-Source Voltage

VDS

- 30

Gate-Source Voltage

VGS

"20

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

- 2.2

- 1.9

- 1.7

- 1.4

ID
TA = 85_C

Pulsed Drain Current

IDM

Continuous Diode Current (Diode Conduction)a

IS
TA = 25_C

Maximum Power Dissipationa

Unit

TA = 85_C

Operating Junction and Storage Temperature Range

PD

-8
- 1.4

- 0.9

1.45

0.95

0.75

0.5

TJ, Tstg

W
_C

- 55 to 150

THERMAL RESISTANCE RATINGS


Parameter

Symbol
t v 5 sec

M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot (Drain)

Steady State
Steady State

RthJA
RthJF

Typical

Maximum

65

85

105

130

38

48

Unit

_C/W
C/W

Notes
a. Surface Mounted on 1 x 1 FR4 Board.
Document Number: 72323
S-31668Rev. A, 11-Aug-03

www.vishay.com

Si1433DH
New Product

Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)


Parameter

Symbol

Test Condition

Min

VGS(th)

VDS = VGS, ID = - 100 mA

-1

Typ

Max

Unit

-3

"100

nA

Static
Gate Threshold Voltage
Gate-Body Leakage

IGSS

Zero Gate Voltage Drain Current

IDSS

On-State Drain Currenta

ID(on)

Drain Source On-State


Drain-Source
On State Resistancea

-1
-5

VDS = - 5 V, VGS = - 4.5 V

mA

-4

A
0.120

0.150

VGS = - 4.5 V, ID = - 1.6 A

0.210

0.260

gfs

VDS = - 10 V, ID = - 2.2 A

VSD

IS = - 1.2 A, VGS = 0 V

- 0.85

- 1.2

3.1

rDS(on)

Voltagea

VDS = - 16 V, VGS = 0 V
VDS = - 16 V, VGS = 0 V, TJ = 85_C

VGS = - 10 V, ID = - 2.2 A

Forward Transconductancea
Diode Forward

VDS = 0 V, VGS = "8 V

W
S
V

Dynamicb
Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

11

17

tr

17

26

18

27

13

20

Rise Time
Turn-Off Delay Time

VDS = - 15 V, VGS = - 4.5 V, ID = - 2.2 A

nC

1.6

VDD = - 15 V, RL = 15 W
ID ^ - 1 A, VGEN = - 10 V, RG = 6 W

td(off)

Fall Time

1.0

tf

ns

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics

Transfer Characteristics

8
TC = - 55_C

VGS = 10 thru 5 V

7
I D - Drain Current (A)

I D - Drain Current (A)

25_C
6
5
4V
4
3
2

6
5
125_C
4
3
2

1
3V

0
0

VDS - Drain-to-Source Voltage (V)

www.vishay.com

VGS - Gate-to-Source Voltage (V)

Document Number: 72323


S-31668Rev. A, 11-Aug-03

Si1433DH
New Product

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)


Capacitance
350

0.60

280
C - Capacitance (pF)

r DS(on)- On-Resistance ( W )

On-Resistance vs. Drain Current


0.75

0.45

0.30
VGS = 4.5 V
VGS = 10 V

0.15

Ciss
210

140
Coss
70
Crss

0.00

0
0

ID - Drain Current (A)

Gate Charge

24

30

On-Resistance vs. Junction Temperature


1.6

VDS = 15 V
ID = 2.2 A

VGS = 10 V
ID = 2.2 A

r DS(on)- On-Resistance ( W )
(Normalized)

V GS - Gate-to-Source Voltage (V)

18

VDS - Drain-to-Source Voltage (V)

10

0
0

1.4

1.2

1.0

0.8

0.6
- 50

- 25

Qg - Total Gate Charge (nC)

Source-Drain Diode Forward Voltage

50

75

100

125

150

On-Resistance vs. Gate-to-Source Voltage


0.70

r DS(on)- On-Resistance ( W )

TJ = 150_C
1

TJ = 25_C

0.56

0.42
ID = 2.2 A
0.28

0.14

0.00

0.1
0.00

25

TJ - Junction Temperature (_C)

10

I S - Source Current (A)

12

0.3

0.6

0.9

1.2

VSD - Source-to-Drain Voltage (V)

Document Number: 72323


S-31668Rev. A, 11-Aug-03

1.5

10

VGS - Gate-to-Source Voltage (V)

www.vishay.com

Si1433DH
New Product

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)


Single Pulse Power, Junction-to-Ambient
35

0.4

28

0.2

21

Power (W)

V GS(th) Variance (V)

Threshold Voltage
0.6

ID = 250 mA

0.0

14

- 0.2

- 0.4
- 50

- 25

25

50

75

100

125

0
0.001

150

0.01

TJ - Temperature (_C)

0.1

10

Time (sec)

Safe Operating Area


10

I D - Drain Current (A)

Limited by
rDS(on)

1 ms

10 ms
100 ms
1s

0.1
TC = 25_C
Single Pulse

10 s
dc

0.01
0.1

10

100

VDS - Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Ambient


2

Normalized Effective Transient


Thermal Impedance

1
Duty Cycle = 0.5

0.2
Notes:

0.1
PDM

0.1

0.05
t1
t2
1. Duty Cycle, D =

0.02

t1
t2

2. Per Unit Base = RthJA = 105_C/W


3. TJM - TA = PDMZthJA(t)
4. Surface Mounted

Single Pulse
0.01
10 -4

www.vishay.com

10 -3

10 -2

10 -1
1
Square Wave Pulse Duration (sec)

10

100

600

Document Number: 72323


S-31668Rev. A, 11-Aug-03

Si1433DH
New Product

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)


Normalized Thermal Transient Impedance, Junction-to-Foot
2

Normalized Effective Transient


Thermal Impedance

1
Duty Cycle = 0.5

0.2
0.1
0.1

0.05
0.02
Single Pulse

0.01
10 -4

Document Number: 72323


S-31668Rev. A, 11-Aug-03

10 -3

10 -2
10 -1
Square Wave Pulse Duration (sec)

10

www.vishay.com

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