Experiment No. 1: To Plot The NMOS V-I Characteristics
Experiment No. 1: To Plot The NMOS V-I Characteristics
1
Roll No. : A32
Aim :
Circuit
Diagram:
R1
200
M1
4
v ds
10Vdc
BSS83/PLP
v gs
7Vdc
PSPICE
Parameter :
MOSFET:
DC sweep analysis:
Primary sweep(Vds)
Start:0 End:10V Increment:0.1V
Secondary sweep(Vgs)
Start:0 End:7V Increment:1V
PSPICE
Simulatio
n Result :
1.5mA
1.0mA
0.5mA
0A
0V
1V
2V
3V
4V
5V
6V
7V
8V
9V
ID(M1)
V_Vds
Result /
Conclusio
n:
Roll No. :
A32
Sem/Br :
8th Sem/EE
Marks out
of 10
Signature :
Name of Lecturer : MRS.Y.A.GAIDHANE
10V