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Microelectronic Circuit Design Fourth Edition Solutions To Exercises

The document contains solutions to exercises from a microelectronic circuit design textbook. It includes calculations of current, voltage, and other circuit parameters for bipolar junction transistors. Various circuit configurations and component values are analyzed.

Uploaded by

reky_george
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
130 views

Microelectronic Circuit Design Fourth Edition Solutions To Exercises

The document contains solutions to exercises from a microelectronic circuit design textbook. It includes calculations of current, voltage, and other circuit parameters for bipolar junction transistors. Various circuit configurations and component values are analyzed.

Uploaded by

reky_george
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Microelectronic Circuit Design

Fourth Edition
Solutions to Exercises
CHAPTER 5
Page 223

(a )

F =

F
0.970
0.993
0.250
=
= 32.3 | F =
= 142 | F =
= 0.333
1 F 1 0.970
1 0.993
1 .250

(b)

F =

F
40
200
3
=
= 0.976 | F =
= 0.995 | F = = 0.750
F + 1 41
201
4

Page 225

0.700
9.30 1015 A 9.30
iC = 1015 Aexp
exp
exp

1 = 1.45 mA
0.5 0.025
0.025
0.025
0.700
9.30 1015 A 0.700
iE = 1015 Aexp
exp
exp
+
1 = 1.46 mA
0.025 100 0.025
0.025

iB =

1015 A 0.700 1015 A 9.30


exp
exp
1 +
1 = 14.5 A
100 0.025
0.5 0.025

R. C. Jaeger and T. N. Blalock


08/09/10

Page 227
0.750
0.700 1016 A 0.700
iC = 1016 Aexp

exp
exp


1 = 563 A
0.4 0.025
0.025
0.025

iE = 10

16

iB =

0.750
0.700 1016 A 0.750
Aexp
exp
exp
+
1 = 938 A
75 0.025
0.025
0.025

1016 A 0.750 1016 A 0.700


exp
exp
1 +
1 = 376 A
75 0.025
0.4 0.025

0.750
2
iT = 1015 Aexp
exp
= 10.7 mA
0.025
0.025
0.750
4.25
iT = 1016 Aexp

exp

= 1.07 mA
0.025
0.025

R. C. Jaeger and T. N. Blalock


08/08/10

Page 230
104 A
I

VBE = VT ln C + 1 = 0.025V ln 16 + 1 = 0.691 V


IS

10 A
103 A
I

VBE = VT ln C + 1 = 0.025V ln 16 + 1 = 0.748 V


IS

10 A
Page 231

npn :VBE > 0, VBC < 0 Forward Active Region | pnp :VEB > 0, VCB > 0 Saturation Region
Page 233
F
0.95
F =
=
= 19
1 F 0.05
VBE = 0, VBC

I E = I S = 0.100 fA

IB =

IS
1016 A
=
= 0.300 fA
R
0.333

VBE << 0, VBC << 0 :

IC =

IS
= 3x1016 A = 0.300 fA
R

IE =

R
0.25 1
=
=
1 R 0.75 3

1
1
<< 0 : IC = I S 1+ = 1016 A1+
= 0.400 fA
0.333
R
R =

I S 1016 A
=
= 5.26 aA
F
19.0

IB =

IS IS
1016 A 1016 A

= 0.305 fA
F R
19.0
1/ 3

Page 235
(a ) The currents do not depend upon VCC as long as the collector - base junction is reverse
biased by more than 0.1 V. (Later when Early votlage VA is discussed, one should revisit
this problem.)
IE
100A
=
= 1.96 A | IC = F I B = 50I B = 98.0 A
F + 1
51
I

98.0A
= VT ln C + 1 = 0.025V ln 16 + 1 = 0.690 V
10 A
IS

(b) I
VBE

= 100 A | I B =

R. C. Jaeger and T. N. Blalock


08/09/10

Page 236
(a ) The currents do not depend upon VCC as long as the collector - base junction is reverse
biased by more than 0.1 V. (Later when Early voltage VA is discussed, one should revisit
this problem.)

(b) Forward - active region : I

= 100 A | I E = ( F + 1) I B = 5.10 mA | IC = F I B = 5.00 mA

5.00mA
VBE = VT ln C + 1 = 0.025V ln 16 + 1 = 0.789 V | Checking : VBC = 5 + 0.789 = 4.21
10 A

IS

Forward - active region with VCB 0 requires VCC VBE or VCC 0.764 V

Page 238
(a) Resistor R is changed.
0.7V (9V )

IE =

5.6k

= 1.48 mA | I B =

IE
I
= E = 29.1 A | IC = F I B = 50I B = 1.45 mA
F + 1 51

VCE = VC VE = (9 4300IC ) (0.7) = 3.47 V | Q - Po int : (1.45 mA, 3.47 V )

(b) I

0.7V (9V ) 8.3V


F + 1
51
IC = 100A = 102A | R =
=
= 81.4 k
F
50
102A
102A

The nearest 5% value is 82 k.

Page 239
0.7V (9V )
I
I
IE =
= 1.48 mA | I B = E = E = 29.1 A | IC = F I B = 50I B = 1.45 mA
5.6k
F + 1 50

F + 1
51
IC =
IC = 1.02IC VBE = VT ln C + 1 = 0.025ln 2x1015 IC + 1
F
50
IS

V
VBE + 8200 1.02 5x1016 exp BE 1 = 9 VBE = 0.7079 V using a calculator solver
0.025

0.7079
or spreadsheet. IC = 5x1016 exp
= 992 A | VCE = 9 4300IC (0.708) = 5.44 V
0.025

IE =

I SD =

I SBJT 2x1014 A
=
= 21.0 fA
F
0.95

R. C. Jaeger and T. N. Blalock


08/08/10

Page 242
Resistor R is changed :
IC =

0.7V (9V )
5.6k

= 1.48 mA | I B =

IC
I
= C = 0.741 mA | I E = R I B = (1) I B = 0.741 mA
R + 1
2

Page 244

VCESAT

1mA
1+

1
2(40A)

= (0.025V ) ln
= 99.7 mV
0.5
1mA
1

50(40A)

VBESAT

VBCSAT

0.1mA + (1 0.5)1mA

= (0.025V ) ln
= 0.694 mV

15 1
10 A + 1 0.5
50

1mA

0.1mA
50

= 0.627 mV | V
= (0.025V ) ln
CESAT = VBESAT VBCSAT = 67.7mV

15 1 1
10 A + 1 0.5
0.5 50

Page 247

(a )

Dn =

kT
n = 0.025V 500cm2 /V s = 12.5cm2 / s
q

)(
(

)(

)(

19
2
4
2
20
6
qADn ni2 1.6x10 C 50m 10 cm / m 12.5cm / s 10 / cm
= 1018 A = 1 aA
( b) I S = N W =
18
3
10 / cm (1m)
AB

Page 250
1.38x1023 J / K (373K )
I
10 A
VT =
= 32.2mV | CD = C F =
4x109 s = 1.24 F
19
VT
0.0322V
1.60x10 C

f
300 MHz
f = T =
= 2.40 MHz
F
125

R. C. Jaeger and T. N. Blalock


08/09/10

Page 251
0.7 10
10
1.74mA
IC = 1015 Aexp
= 19.3 A
1+ = 1.74 mA | F = 751+ = 90.0 | I B =
90.0
0.025 50
50
0.7
1.45mA
IC = 1015 Aexp
= 19.3 A
= 1.45 mA | F = 75 | I B =
75
0.025

Page 253
40 4
40 3
gm =
10 A = 4.00 mS | g m =
10 A = 40.0 mS
V
V
CD = 4.00mS (25 ps) = 0.100 pF | CD = 40.0mS (25 ps) = 1.00 pF

Page 256
23
kT 1.38x10 (300)
VT =
=
= 25.9 mV | IS =
q
1.60x1019

IC
350A
=
= 1.39 fA
VBE
0.68
exp
exp

0.0259
VT

BF = 80 | VAF = 70 V
Page 260

18k
12V = 4.00 V | REQ = 18k 36k = 12 k
18k + 36k
4.00 0.7 V
IB =
= 2.687 A | IC = 75I B = 202 A | I E = 76I B = 204 A
12 + (75 + 1)16 k

VEQ =

VCE = 12 22000IC 16000I E = 4.29 V | Q - po int : (202 A, 4.29 V )

180k
12V = 4.00 V | REQ = 180k 360k = 120 k
180k + 360k
4.00 0.7
V
IB =
= 2.470 A | IC = 75I B = 185 A | I E = 76I B = 188 A
120 + (75 + 1)16 k

VEQ =

VCE = 12 22000IC 16000I E = 4.29 V | Q - po int : (185 A, 4.93 V )

R. C. Jaeger and T. N. Blalock


08/08/10

Page 261
I
50I B
I2 = C =
= 10I B
5
5

18k
12V = 4.00 V | REQ = 18k 36k = 12 k
18k + 36k
4.00 0.7
V
IB =
= 0.4111 A | IC = 500I B = 205.6 A | I E = 76I B = 206.0 A
12 + (500 + 1)16 k

VEQ =

VCE = 12 22000IC 16000I E = 4.18 V | Q - point : (206 A, 4.18 V )

Page 262
The voltages all remain the same, and the currents are reduced by a factor of 10. Hence all
the resistors are just scaled up by a factor of 10.
120 k 1.2 M 82 k 820 k 6.8 k 68 k
Page 264

76
VCE = 0.7 V at the edge of saturation. 12V - RC + 16k(205A) 0.7V RC 38.9 k
75

VBESAT = 4 12k(24A) 16k(184A) = 0.768 V


VCESAT = 12 56k(160A) 16k(184A) = 0.096 V

Page 265
9 0.7
V
IB =
= 95.4 A | IC = 50I B = 4.77 mA | I E = 51I B = 4.87 mA
36 + (50 + 1)1 k
VCE = 9 1000( IC + I B ) = 4.13 V | Q - point : (4.77 mA, 4.13 V )

Page 266
VBE (V)
0.70000
0.67156
0.67178
0.67178

IC (A)

V'BE (V)

2.0155E-04
2.0328E-04
2.0327E-04
2.0327E-04

0.67156
0.67178
0.67178
0.67178

R. C. Jaeger and T. N. Blalock


08/09/10

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