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Hiperfet Power Mosfets: Ixth 60N10 V 100 V Ixtt 60N10 I 60 A 20 M

This document provides technical specifications and performance characteristics for N-Channel enhancement mode power MOSFET products from IXYS. It includes maximum ratings, characteristic values, package outlines and dimensions, and patent information.

Uploaded by

Lenny Henningham
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95 views

Hiperfet Power Mosfets: Ixth 60N10 V 100 V Ixtt 60N10 I 60 A 20 M

This document provides technical specifications and performance characteristics for N-Channel enhancement mode power MOSFET products from IXYS. It includes maximum ratings, characteristic values, package outlines and dimensions, and patent information.

Uploaded by

Lenny Henningham
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Advance Technical Information

IXTH 60N10
IXTT 60N10

HiPerFETTM
Power MOSFETs

VDSS
ID25

= 100 V
= 60 A

= 20 m

RDS(on)

N-Channel Enhancement Mode

Symbol

Test conditions

Maximum ratings

VDSS

TJ = 25C to 150C

100

VDGR

TJ = 25C to 150C; RGS = 1.0 M

100

VGS

Continuous

20

VGSM

Transient

30

ID25
ID(RMS)
IDM
IAR

TC = 25C MOSFET chip capability


External lead current limit
TC = 25C, pulse width limited by TJM
TC = 25C

80
75
320
80

A
A
A
A

EAR
EAS

TC = 25C
TC = 25C

45
1.5

mJ
J

dv/dt

IS IDM, di/dt 100 A/s, VDD VDSS


TJ 150C, RG = 2

V/ns

PD

TC

300

TJ

-55 ... +150

TJM
Tstg

150
-55 ... +150

C
C

300

= 25C

TL

1.6 mm (0.063 in.) from case for 10 s

Md

Mounting torque

Weight

TO-264

1.13/10

Nm/lb.in.

TO-247 AD (IXTH)

(TAB)

TO-268 (IXTT) Case Style

G
G = Gate
S = Source

Features
z
z
z
z

Symbol
Test Conditions
(TJ = 25C, unless otherwise specified)

Advantages
z

VGS = 0 V, ID = 250 A

100

VGS(th)

VDS = VGS, ID = 250 A

2.0

IGSS

VGS = 20 VDC, VDS = 0

IDSS

VDS = VDSS
VGS = 0 V

RDS(on)

VGS = 10 V, ID = 0.5 ID25


Pulse test, t 300 s, duty cycle d 2 %

2003 IXYS All rights reserved

TJ = 25C
TJ = 125C

International standard packages


Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier

Characteristic Values
Min. Typ.
Max.

VDSS

V
4.0

100

nA

25
250

A
A

20

(TAB)
S
D = Drain
TAB = Drain

z
z

Easy to mount
Space savings
High power density

DS99069(7/03)

IXTH 60N10
IXTT 60N10
Symbol

Test Conditions

Characteristic Values
(TJ = 25C, unless otherwise specified)
Min. Typ. Max.

gfs

VDS = 10 V; ID = 0.5 ID25, pulse test

Ciss
Coss

VGS = 0 V, VDS = 25 V, f = 1 MHz

30

45

3200

pF

510

pF

C rss

180

pF

td(on)

20

ns

tr

VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25

20

ns

td(off)

RG = 3.3 (External)

70

ns

18

ns

110

nC

18

nC

48

nC

tf
Qg(on)
Qgs

VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25

Qgd
RthJC
RthCK

0.42
(TO-247)

Source-Drain Diode

0.25

K/W
K/W

Ratings and Characteristics


(T J = 25C unless otherwise specified)
Min.
Typ.
Max.

Symbol

Test Conditions

IS

VGS = 0V

ISM

Repetitive; pulse width limited by TJM

VSD

IF = IS, VGS = 0 V,
Pulse test, t 300 s, duty cycle d 2 %

t rr

IF = 30A, -di/dt = 100 A/s, VR = 100V

60

240

1.5

150

ns

Qrr

TO-247 AD Outline

Terminals: 1 - Gate
3 - Source

Dim.

Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC

Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC

TO-268 Outline

Terminals: 1 - Gate
3 - Source

Min Recommended Footprint

2 - Drain
Tab - Drain

2 - Drain
Tab - Drain

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1


4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343

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