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HW2 Solution

This document contains solutions to homework problems for an electronics circuit analysis course. It includes calculations and equations for diode characteristics such as the diode equation, determining saturation current and ideality factor from experimental data, and analyzing diode circuits. Diode circuits analyzed include determining operating points, forward and reverse bias conditions, and multiple diode configurations. Graphs and calculated values are provided as worked examples.

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127 views5 pages

HW2 Solution

This document contains solutions to homework problems for an electronics circuit analysis course. It includes calculations and equations for diode characteristics such as the diode equation, determining saturation current and ideality factor from experimental data, and analyzing diode circuits. Diode circuits analyzed include determining operating points, forward and reverse bias conditions, and multiple diode configurations. Graphs and calculated values are provided as worked examples.

Uploaded by

Andrew
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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HW2Solutions

ECE302001

Fall2011

3.21

v
i
vD
iD = I S exp D 1 or
= ln1+ D
nVT
IS
nVT
i
1
v
For i D >> I S , D ln D or ln (I D )=
v D + ln (IS )
nVT
IS
nVT
which is the equation of a straight line with slope 1/nVT and x-axis intercept at -ln (IS). The values of n and IS can
-4

-9

be found from any two points on the line in the figure: e. g. iD = 10 A for vD = 0.60 V and iD = 10 A for vD =
0.20 V. Then there are two equations in two unknowns:

40
8
ln 10-9 = .20 + ln (IS ) or 9.21 = + ln (IS )
n
n
40
24
ln 10-4 = .60 + ln (IS ) or 20.72 = + ln (IS )
n
n

( )
( )

-12

Solving for n and IS yields n = 1.39 and IS = 3.17 x 10

A = 3.17 pA.

3.23

V
I
VD = nVT ln1+ D | I D = I S exp D 1
IS
nVT
104 A
105 A
(a) VD = 0.025V ln1+ 18 = 0.806V | (b) VD = 0.025V ln1+ 18 = 0.748V
10 A
10 A
0
(c) I D = 1018 Aexp
1 = 0 A
0.025V
0.06V
(d) I D = 1018 Aexp
1 = 0.909 aA
0.025V
4V
(e) I D = 1018 Aexp
1 = 1.00 aA
0.025V

HW2Solutions

ECE302001

Fall2011

3.38

)(

1018 cm 3 1020 cm 3
N AND
j = VT ln
= (0.025V )ln
= 1.04 V
ni2
1020 cm6

2 11.7 8.854x1014 F cm1

2s 1
1
1
1
wdo =
+

j =
18 3 + 20 3 (1.04V)
19
q N A ND
1.602x10 C
10 cm
10 cm
VR

wdo = 0.0368 m

wd = 0.0368m 1+

5
= 0.0887 m
1.04

wd = wdo 1+

wd = 0.0368m 1+

25
= 0.184 m
1.04

3.44

( )

1018 1015
N AND
j = VT ln
= 0.025ln
= 0.748V
ni2
1020

2(11.7) 8.854x1014 1
2S 1
1
1
4
wdo =
+
j =

18 + 15 0.748 = 0.984x10 cm
19
q N A ND
10
1.602x10
10
C =
"
jo

S
wdo

11.7 8.854x1014
0.984x104

) = 10.5x10

-9

F / cm

| Cj =

C "jo A
1+

10.5x10-9 (0.02)

VR

9
1+
0.748

3.60
R
iD
V

+
vD
-

The load line equation: V = iD R + vD

We need two points to plot the load line.

(a) V = 6 V and R = 4 k: For vD = 0, iD = 6V/4 k = 1.5 mA and for iD = 0, vD = 6V.


Plotting this line on the graph yields the Q-pt: (0.5 V, 1.4 mA).
(b) V = -6 V and R = 3 k: For vD = 0, iD = -6V/3 k = -2 mA and for iD = 0, vD = -6V.

= 58.2 pF

HW2Solutions

ECE302001

Fall2011

Plotting this line on the graph yields the Q-pt: (-4 V, -0.67 mA).
(c) V = -3 V and R = 3 k: Two points: (0V, -1mA), (-3V, 0mA); Q-pt: (-3 V, 0 mA)
(d) V = +12 V and R = 8 k: Two points: (0V, 1.5mA), (4V, 1mA); Q-pt: (0.5 V, 1.4 mA)
(e) V = -25 V and R = 10 k: Two points: (0V, -2.5mA), (-5V, -2mA); Q-pt: (-4 V, -2.1 mA)
i (A)
D

.002

Q-Point
(0.5V,1.45 mA)
(d)

.001

Q-Point
(-3V,0 mA)
-7

-6

-5

-4

-3

Q-Point
(0.5V,1.4 mA)

-2

-1

Load line for (a)


3

(c)

Q-Point
(-4V,-0.67 mA)

-.001

Load line for (b)


-.002
Q-Point
(-4V,-2.1 mA)

(e)

3.72 (a)

5 (5)

= 0.625 mA
16k
3 (7)
(b) Diode is forward biased :V = 3 0 = 3 V | I =
= 0.625 mA
16k
(c) Diode is reverse biased : I = 0 | V = 7 16k(I ) = 7 V | VD = 10
(a) Diode is forward biased :V = 5 + 0 = 5 V | I =

(d ) Diode is reverse biased : I = 0 | V = 5 + 16k(I )= 5 V | VD = 10 V

(V)

HW2Solutions

ECE302001

Fall2011

(b)

5 (4.3)

= 0.581 mA
16k
2.3 (7)
(b) Diode is forward biased :V = 3 0.7 = 2.3 V | I =
= 0.581 mA
16k
(c) Diode is reverse biased : I = 0 | V = 7 16k(I ) = 7 V | VD = 10 V
(a) Diode is forward biased :V = 5 + 0.7 = 4.3 V | I =

(d ) Diode is reverse biased : I = 0 | V = 5 + 16k(I ) = 5 V | VD = 10 V

3.75 (a)

(a) D1 and D2 forward biased


I D2 =

0 (6) V

= 400A

15 k
D1 : (200 A, 0V)

I D1 =

9 (0) V

15
D2 : (400 A, 0 V)

I D2 = 200A

(b) D1 forward biased, D2 reverse biased


60 V
= 400A
VD2 = 9 0 = 9 V
15 k
D1 : (400 A, 0 V) D2 : (0 A, - 9 V)
I D1 =

(c) D1 and D2 forward biased


I D2 =

0 (9) V

= 600A

15 k
D1 : (200 A, 0 V)

I D1 = I D2

D2 : (600 A, 0 V)

6 (0) V
= 200A
15 k

(d) D1 reverse biased, D2 forward biased


6V (9V )

= 500A
VD1 = 6 15000I D2 = 1.50V
30k
D1 : (0 A,1.50 V) D2 : (500 A, 0 V)
I D2 =

(b)

(a) D1 on, D2 on :
I D2 =

0.65 0.65 (6)

15k
D1 : (157 A, 0.65 V)

9 0.65
400A = 157A
15k
D2 : (400 A, 0.65 V)
= 400A | I D1 =

HW2Solutions

ECE302001

Fall2011

(b) D1 on, D2 off :


6 0.65
= 357A | VD2 = 9 0.65 = 9.65V

15k
D1 : (357 A, 0.65 V) D2 : (0 A, 9.65 V)
I D2 = 0 | I D1 =

(c) D1 on, D2 on :
I D2 =

-0.65 0.65 (9)

= 513A | I D1 = 513A

15k
D1 : (70.0 A, 0.65 V) D2 : (513 A, 0.65 V)

6 (0.65)
15k

= 70.0A

(d ) D1 off, D2 on :
I D1 = 0 | I D2 =

6 0.65 (9)

= 478A | VD1 = 6 15x103 I D2 = 1.18V

30k
D1 : (0 A, 1.18 V ) D2 : (478 A, 0.65 V )

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