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Conventional Elect - Telecom I

Telecom MCQS

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Ishfaq Babar
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0% found this document useful (0 votes)
45 views15 pages

Conventional Elect - Telecom I

Telecom MCQS

Uploaded by

Ishfaq Babar
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF or read online on Scribd
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‘GTD-O-SAAA ELECTRONICS AND TELECOMMUNICATION ENGINEERING Paper I (Conventional) Time Allowed : Three Hours | | Maxintum Mar INSTRUCTIONS Please read each of the following instructions carefully before attempting questions. Candidate should attempt FIVE questions in all. Question no. 1 is compulsory. Out of the remaining SIX questions attenpt any FOUR questions, All questions carry equal marks. The number of marks carried by a part of a question is indicated against it. Answers must be written ir ENGLISH only. Assume suitable data, if necessary, and indicate the same clearly. Unless otherwise mentioned, symbols and notations have their usual standard meanings. Values of the following constants may be used as indicated; wherever necessary : Electronic charge = —1-6 * 10” coulomb Free space permeability = 42 x 10-7 Henry/m Free space permittivity = (1/36) » 10° Farad/m Velocity of light in free space = 3 x 10° m/s Boltzmann constant = 1:38 x 10 J/K Planck constant = 6-626 x 10°" J-s Neat sketches may be drawn, wherever required. All parts and sub-parts of a question are to be attempted together in the answer book. Attempts of questions shall be counted in chronological order. Unless struck off, attempt of a question shall be counted even if attempted partly. An) page or portion of the page left blank in the answer book must be clearly struck off. A-GTD-O-SAAA 2 (Contd.) 1. (a) With the help of rk diagram explain the difference between direct and indirect bandgap semiconductors. Identify the following semi- conductors in the above categories. 5 (i) Si (ii) Ge (iii) GaAs (iv) GaP (v) InSb (b) (i) Draw the structure of Schottky-barrier photodiode. 1 (ii) Draw the geometrical structure of an Avalanche Photodiode and its electrical field profle. 2 (iii) Draw the V-I characteristics of GaAs and explain the significance of negative resistance. 2 (c) Two independent signals x,(¢) and x,(f) are periodic with a period 7;. Show that the product of the two periodic signals is also periodic with the same time period 7). 5 A-GTD-O-SAAA 3 (Contd.) (e) (0) Ve = 100 V, 50 Hz A series RLC circuit with R = 1 Q.L = 0-2 d and an unknown C is excited with an ac source of 100 V, 50 Hz. For resonance com dition, calculate (i) the capacitance, C; (ii) the voltage across C, and (iii) the Q-factor. Also plot the behaviour of current with frequency, 6 A long copper circular conductor with diameter of 3 mm carries a current of 10 A. What is the time taken for all the conduction electrons in 100 mm long section of the conductor to leave, assuming that there are 8-49 x 10°* electrons/m?. 4 A lossless transmission line 100 cm long with operating frequency of 500 MHz having L = 0-2 wH/m has a phase velocity of 2% 10° m/sec. Find the line’s capacitance per metre. 5 A-GTD-O-SAAA 4 (Contd.) (g) The current from a photodiode changes from (h ) 2. (a) (b) 100 A to 200 1A in a measurement set up. Design an op-amp based conditioning circuit to get a 1 V output. 5 A student, while measuring the frequency of a waveform from a square wave generator, set the trigger input of a CRO in “LINE” mode. He adjusted the input frequency to 396 Hz to get a stable display on the screen. What is the actual frequency of the mains supply ? 3 State Wiedemann-Franz-Lorenz Law. A copper disk with a diameter of 2 cm and thickness of 25mm has a resistivity of 70 nQm. The disk conducts heat from an electronic device to a heat sink at a rate of 10 W. Estimate the value of the temperature drop across the disk neglecting heat losses from the surface. 10 A Si crystal is doped with phosphorous atoms to the extent of 1 part of impurity atom. per billion (ppb) Si atoms. Estimate the resistance of the silicon sample of length 1 om and area of cross-section of 1 cm’. The atomic con- centration of Si is 5x 108/m?. The mobili- ties of electrons and holes are respectively 1500 cm?/v.s and 450 cm?/v.s respectively. Given n; = 1-5 * 10!%em’, 10 A-GTD-O-SAAA. x (Contd.) (c) (d) 3. (a) (b) (i) What is a soft magnetic material ? Give examples of soft magnetic materials and list their applications. 5 (ii) With the help of magnetization charac- teristics (M vs. B curves) explain the difference between Type I and Type II superconductors. 5 (i) What is Kerr effect ? How does it differ from Pockels effect ? 5 (ii) What is Fresnel reflection loss? Light falls on a GaAs substrate at 850 nm from air. Calculate the Fresnel reflection loss at the air-GaAs interface for normal incidence. Given that <, (GaAs) = 13-1. 3 Draw the cross section of a MESFET and its equivalent circuit (h, f). Why are GaAs MESFETs preferred for very high frequency applications ? 10 An n-channel MESFET has been fabri- cated using GaAs and have Ny = 10'* cm, a=03 pm, L = 1-2 um if €, = 13 x 8854 * 10"? F/m. Calculate pinchoff voltage. 10 A-GTD-O-SAAA 6 (Contd.) Explain Floatzone technique to reduce the impurities in the crystalline rod of semi- conductor material. 5 Give reasons for choosing silicon for fatri- cating generat purpose IC chips. 5 Draw the geometry of a typical tunnel dicde and its equivalent circuit. Sketch the V-1 characteristics and explain the existence of negative resistance. 10 Determine the total energy of a raised cosi1e pulse x(/) defined as 1 1 cos 2 mft +1], -— <1 < —. [cos 2 mft+1] F iF =0 otherwise. 10 x(0) 1 o t —_t \ Find the Fourier transform of the above sinusoidal pulse. 10 A-GTD-O-SAAA 7 (Contd. (©) @ 5. (a) Find the discrete-time convolution sum of the following y(n) = 3" u [on +3] #4 [2-2] 10 Determine a particular solution for the systems described by the following differential equa- tions for the given input. 10 a y(t dx(t = +3(1)=2 _ @) x= (ii) x() =e" iii) x() = cos t+ sin t (iv) x() = 26 + zm —) 250V 5 Ry= 500 Draw the Thevenin equivalent circuit in the s-domain for the network shown above. Hence find the current through the load, R, = 50 Q when S is closed. 15 A-GTD-O-SAAA 8 (Contd.) (b) (©) vy, 15 V, 15 kHz For the circuit shown above, show that the 1/4 resonant frequency f, =—j—--—. °aaVic P Calculate C when the supply current is minimum. 10 State Millman’s theorem and illustrate. For the circuit shown below, obtain the Millman’s equivalent generator and determine the current in the load, Z, = (1 +j2)Q. 15 Zy 25 Zy Os vi > vs V, = 2 20° volts, I, = 120° Amp V3 =5 25° volts, Z, = 1-5Q, Z, = 5Q, Z;=3Q A-GTD-O-SAAA 9 (Contd.) 6 (a) (i) (ii) Find the capacitance per unit length between two uniformly charged long lines of density +p, and ~p, parallel to each other which are circular cross section of radius a and conducting whose axes are separated by distance D. Prove that equipotential lines at any point P(x, y) at radial distances 7, and ry from these conductors are circles if they are located as shown in the following ne figureif 2 = A-GTD-O-SAAA 10 (Contd.) (b) (©) @ Gi) (iii) (iv) ) Why are copper bus-bars at electrical power substations hollow though they are carrying large current magnitudes at 50 Hz. Compare the wavelengths of 50 Hz EM wave in air and in copper if Geopper = 5:8 x 107 Sim. By what percentage the EM power density at 50 Hz reduces in a copper shield per skin depth. Why is the attenuation offered by iron to the EM wave much higher than that of copper ? Why is the magnetic field intensity higher than electric field intensity in a good conductor when the EM wave is attenuated ? S If a lossless transmission line of length 2m which is less than quarter wave length has open and short circuit impedances at the input as -j50 © and j100 Q respectively, find @ Gi) Zp and r of the line How long should the short circuited line be in order for it to appear as an open circuit at the input terminals ? 10 A-GTD-0-SAAA i (Contd,) (d) Fora parallel plate wave guide shown in figure 7. (a) below : freespace diekectric Find the power reflection coefficierts for TE) and TM9 waves of frequency 5 GHz incident on the junction from the free space side. 10 A 10V o amt a R e Obit Distinguish between Active ani - Passive Transducers with examples. A capacitance A-GTD-O-SAAA 12 (Contd.) (b) displacement transducer is interfaced to an amplifier and a 10 bit ADC as shown above. Given the change in the capacitance for a full scale displacement is + 5%, find the 15 (i) gain of the amplifier (ii) Resolution of the ADC in volts and the (iii) change in sensitivity of the system when the supply voltage decreases by 5%. (100 mY Sine wave) An electronic voltmeter uses a PMMC ammeter with an FSD of 1 mA and a coil resistance of 1 kQ as shown above. Calculate R that gives full scale deflection when a sinusoid input of 100 mV is applied. 5 A-GTD-O-SAAA 13 (Contd.) Calculate the Power dissipated thermistor shown in the circuit when operated at 150°C. The resistance of the transducer changes as given in the table. ( ‘Thermistor in the Temp. Resistance 25°C 10 kQ 100°C 1kQ A-GTD-O-SAAA (Contd.) om (d) In a Telemetry system measurement data is transmitted to a remote location using an 8-bit PCM encoding. (i) Determine the Channel Capacity if the Bandwidth is 300 kHz and the SNR = 15. 5 (i) Many transducers data are multiplexed (TDM) with each channel Bandwidth not exceeding 2 kHz. What is the maximum number of channels that can be accommodated in this scheme ? 5 A-GTD-O-SAAA 15

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