Microelectronics: Circuit Analysis and Design
Microelectronics: Circuit Analysis and Design
Microelectronics
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 6-1
Microelectronics, 4e
McGraw-Hill
Chapter 6-2
26/1/2012
Common Emitter
with Time-Varying Input
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 6-3
IB Versus VBE
Characteristic
iB I BQ (1
Neamen
vbe
) I B ib
VT
Microelectronics, 4e
McGraw-Hill
Chapter 6-4
26/1/2012
ac Equivalent Circuit
for Common Emitter
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 6-5
I CQ
VT
VT
I CQ
g m rp
Microelectronics, 4e
McGraw-Hill
Chapter 6-6
26/1/2012
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 6-7
Av ( g m RC )(
Neamen
Microelectronics, 4e
McGraw-Hill
rp
)
rp RB
Chapter 6-8
26/1/2012
Problem-Solving Technique:
BJT AC Analysis
1. Analyze circuit with only dc sources to find Q
point.
2. Replace each element in circuit with smallsignal model, including the hybrid p model for
the transistor.
3. Analyze the small-signal equivalent circuit
after setting dc source components to zero.
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 6-9
Transformation of Elements
Element
DC Model
AC Model
Resistor
Capacitor
Open
Inductor
Short
+Vg, rf
rd = VT/ID
+ VS -
Short
Diode
Independent Constant
Voltage Source
Independent Constant
Current Source
Neamen
IS
Microelectronics, 4e
McGraw-Hill
Open
Chapter 6-10
26/1/2012
ro
Neamen
VA
I CQ
Microelectronics, 4e
McGraw-Hill
Chapter 6-11
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 6-12
26/1/2012
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 6-13
hie rb rp r
h fe
Neamen
Microelectronics, 4e
McGraw-Hill
hre
rp
r
hoe
1 1
r
ro
Chapter 6-14
26/1/2012
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 6-15
Current Amplifier
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 6-16
26/1/2012
Transresistance
Amplifier
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 6-17
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 6-18
26/1/2012
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 6-19
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 6-20
10
26/1/2012
Rib rp (1 ) RE
Ri R1 R 2 Rib
Av
Neamen
Microelectronics, 4e
McGraw-Hill
RC
Ri
(
)
rp (1 ) RE Ri RS
Chapter 6-21
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 6-22
11
26/1/2012
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 6-23
Av g m (ro rc )
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 6-24
12
26/1/2012
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 6-25
Problem-Solving Technique:
Maximum Symmetrical Swing
1. Write dc load line equation that relates ICQ
and VCEQ.
2. Write ac load line equations that relates ic
and vce
3. In general, ic = ICQ IC(min), where IC(min)
is zero or other minimum collector current.
4. In general, vce = VCEQ VCE(min), where
VCE(min) is some specified minimum
collector-emitter voltage.
5. Combine above 4 equations to find optimum
ICQ and VCEQ.
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 6-26
13
26/1/2012
Common-Collector
or Emitter-Follower Amplifier
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 6-27
Rib rp (1 )(ro RE )
Ri R1 R2 R ib
Av
Neamen
(1 )(ro RE )
Ri
)
rp (1 )(ro RE ) Ri RS
Microelectronics, 4e
McGraw-Hill
Chapter 6-28
14
26/1/2012
Output Resistance:
Emitter Follower
Ro
Neamen
rp
RE ro
1
Microelectronics, 4e
McGraw-Hill
Chapter 6-29
Common-Base Amplifier
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 6-30
15
26/1/2012
Av g m ( RC RL )
Ai g m (
Neamen
RC
r
)[ p RE ]
RC RL 1
Microelectronics, 4e
McGraw-Hill
Chapter 6-31
Input Resistance:
Common Base
Rie = rp/(1+)
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 6-32
16
26/1/2012
Output Resistance:
Common Base
RO = RC
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 6-33
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 6-34
17
26/1/2012
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 6-35
Darlington Pair
Ai 1 2
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 6-36
18
26/1/2012
Cascode Amplifier
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 6-37
Av g m1 ( RC RL )
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 6-38
19