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Semi 4 Final Prob Sol 4

This document provides solutions to problems from Chapter 4 of the textbook "Semiconductor Physics and Devices: Basic Principles, 4th edition". The problems calculate intrinsic carrier concentration as a function of temperature for silicon, germanium, and GaAs. They also calculate the intrinsic Fermi level and how it shifts with temperature. Graphs are plotted of intrinsic carrier concentration versus temperature. Expressions are derived for the distribution of electrons and maximum value in the conduction band. The dependence of intrinsic carrier concentration on energy gap is calculated.

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steven88995
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87% found this document useful (15 votes)
7K views18 pages

Semi 4 Final Prob Sol 4

This document provides solutions to problems from Chapter 4 of the textbook "Semiconductor Physics and Devices: Basic Principles, 4th edition". The problems calculate intrinsic carrier concentration as a function of temperature for silicon, germanium, and GaAs. They also calculate the intrinsic Fermi level and how it shifts with temperature. Graphs are plotted of intrinsic carrier concentration versus temperature. Expressions are derived for the distribution of electrons and maximum value in the conduction band. The dependence of intrinsic carrier concentration on energy gap is calculated.

Uploaded by

steven88995
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOC, PDF, TXT or read online on Scribd
You are on page 1/ 18

Semiconductor Physics and Devices: Basic Principles, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

Chapter 4
4.1

Eg

n i2 N c N exp

(b)

kT

300

N cO N O

Eg

exp

kT

kT (eV)

200
400
600

0.01727
0.03453
0.0518

2.5 10 25

1.12 300

0.0259 T
By trial and error, T 417.5 K
_______________________________________

300

2.912 10 38

where N cO and N O are the values at 300 K.

T (K)

n i2 5 10 12

(a) Silicon
n i (cm 3 )

exp

4.4

7.68 10 4
2.38 1012
9.74 10 14

200

300

At T 200 K, kT 0.0259

0.017267
eV

(b) Germanium
n i (cm 3 )

T (K)

2.16 10 10
8.60 10 14
3.82 10 16

(c) GaAs
n i (cm

200
400
600

400

300

At T 400 K, kT 0.0259

0.034533

1.38

3.28 10 9
5.72 1012

eV

7.70 10

200 1.40 10

n i2 400

_______________________________________

2
i

2 2

4.2
Plot
_______________________________________

4.3

Eg
(a) n N c N exp
kT
2
i

5 10
11

300

1.12
exp

0.0259 T 300

200

300

Eg

exp

0.034533
Eg

exp

0.017267

Eg

8 exp

3.025 10 17

0.017267

Eg

0.034533

3.025 10 17 8 exp E g 57.9139 28.9578


or

300

2.5 10 23 2.912 10 38

1.12 300

0.0259 T
By trial and error, T 367.5 K
exp

2.8 1019 1.04 1019

400

300

10 2

3.025 1017
8

E g 28.9561 ln

38.1714

or E g 1.318 eV
Now

7.70 10
10

400

300

N co N o

Semiconductor Physics and Devices: Basic Principles, 4th edition


Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
Let E E c x

1.318
exp

0.034533

x
x exp

kT
To find the maximum value:
Then g c f F

5.929 10 21 N co N o 2.370 2.658 10 17

d g c f F 1 1 / 2
x
x
exp

dx
2
kT

so N co N o 9.41 10 cm
_______________________________________
37

1
x
x 1 / 2 exp
0
kT
kT

which yields

1
x1/ 2
kT

x
1/ 2
kT
2
2x
The maximum value occurs at

4.5

1.10
exp

ni B
kT

n i A
0.90
exp

kT
For T 200 K, kT
For T 300 K, kT
For T 400 K, kT

E Ec

0.20

kT

exp

0.017267 eV
0.0259 eV
0.034533 eV

(b)

EF E

kT

g 1 f F E E exp

(a) For T 200 K,

ni B
0.20
6
exp
9.325 10
n i A
0
.
017267

(b) For T 300 K,


ni B
0.20
4
exp
4.43 10
n i A
0
.
0259

(c) For T 400 K,


ni B
0.20
3
exp
3.05 10
n i A
0
.
034533

_______________________________________
4.6
(a) g c f F

E EF

kT

E E

kT

E E exp
E F E

kT

exp

Let E E x

x
x exp

kT
To find the maximum value
Then g 1 f F

d g 1 f F
d

dx
dx

E Ec

kT

Ec E F

kT

x
x exp
0
kT

Same as part (a). Maximum occurs at

E E c exp

E E c exp
exp

kT
2

kT
2

or

kT
2
_______________________________________
E E

4.7

Semiconductor Physics and Devices: Basic Principles, 4th edition


Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

n E1

n E 2

E1 E c

kT

E1 E c exp

E2 Ec

kT

E 2 E c exp

where

E1 E c 4kT and E 2 E c
Then

n E1

n E 2

4kT
kT
2

kT
2

E1 E 2

kT

exp

E Fi E midgap

N
1
kT ln
2
Nc

19

1
kT ln 1.04 1019
2
2.8 10

T (K)

kT (eV)

200

0.4952 kT

( E Fi E midgap )
(eV)
0.0086
0.0171
0.0257

0.01727
0.03453
0.0518

400
600

_______________________________________


1
2 2 exp 4 2 2 exp 3.5
2

or

n E1
0.0854
n E 2

4.12

m *p
3

kT ln
m n*
4

3
0.70
0.0259 ln

4
1.21
10.63 meV

(a) E Fi E midgap

_______________________________________
4.8

(b)

Plot
_______________________________________

E Fi E midgap

3
0.0259 ln 0.75
4
0.080

43.47 meV
_______________________________________
4.9
Plot
_______________________________________
4.10

m *p
3

E Fi E midgap kT ln
m n*
4

*
*
Silicon: m p 0.56m o , m n 1.08m o
E Fi E midgap 0.0128 eV

4.13
Let g c E K constant
Then

no

m 0.55m o
*
n

E Fi E midgap 0.0077 eV

_______________________________________
4.11

E f F E dE

1
dE
E EF
E c 1 exp

kT

Gallium Arsenide: m *p 0.48m o ,

E Fi E midgap 0.0382 eV

Germanium: m *p 0.37 m o ,

m n* 0.067 m o

Ec

Ec

Let

E EF
dE
kT

exp

E Ec
so that
kT

We can write

dE kT d

Semiconductor Physics and Devices: Basic Principles, 4th edition


Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

E E F Ec EF E Ec

so that

Ec E F
E EF
exp
exp

kT
kT

exp

The integral can then be written as

Ec E F

kT

n o K kT exp
which becomes

no

C1

E f F E dE

E EF
E c 1 exp

kT

E E

We have

dE

dE kT d

We can write

r1
m
r o*
ao
m

For germanium, r 16 , m * 0.55m o


Then
1
r1 16
a o 29 0.53
0.55
or
o

E EF
dE
kT

E Ec
so that
kT

Ec E F

kT

r1 15.4 A
The ionization energy can be written as
2

m * o

13.6 eV
E

m o s
0.55
13.6 E 0.029 eV

16 2

exp

Ec

Let

4.15

for E E c

E Ec

_______________________________________

Ec

n o C1 kT exp

exp d

_______________________________________

exp d exp 1
So

Ec EF

kT

4.14
Let g c E C1 E E c
Then

We find that

n o K kT exp

C1

kT exp kT d

E E F E Ec Ec E F

_______________________________________
4.16
We have

r1
m
r o*
ao
m

For gallium arsenide, r 13.1 ,


m * 0.067m o
Then

Then

n o C1 exp

Ec

o
1
0.53 104 A
0.067

r1 13.1

Ec EF

kT

E Ec
E E c exp
dE
kT

or

Ec EF

kT

n o C1 exp

The ionization energy is

m*

mo
or

13.6

0.067

13.1 2

13.6

E 0.0053 eV

_______________________________________

Semiconductor Physics and Devices: Basic Principles, 4th edition


Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

po
ni

Nc
(a) E c E F kT ln
no

2.8 10

0.0259 ln
15
7 10

0.2148 eV
E

E
(b)
F
E g Ec E F
1.12 0.2148 0.90518
19

eV

E F E

kT

1.04 10

19

2 10 16
10
1.5 10
0.365 eV

0.0259 ln

_______________________________________
4.19

Nc
2.8 10 19
5
2 10

0.0259 ln

0.90518
exp

0.0259

6.90 10 3 cm
(d) Holes

(a) E c E F kT ln

no

p o N exp

(c)

(d) E Fi E F kT ln

4.17

0.8436 eV
E F E E g E c E F

1.12 0.8436
E F E 0.2764 eV

no

(b)

(e) E F E Fi kT ln

ni

7 1015
0.0259 ln
10
1.5 10
0.338 eV

_______________________________________

0.27637
p o 1.04 1019 exp

0.0259
2.414 10 14 cm 3
(c) p-type
_______________________________________
4.20

4.18

N
(a) E F E kT ln
po

375
0.032375 e
300

(a) kT 0.0259

1.04 1019

0.0259 ln
16

2 10

0.162 eV
(b) E c E F E g E F E

1.12 0.162 0.958


eV

0.958
19

(c) n o 2.8 10 exp


0.0259
2.41 10 3 cm 3

3/ 2

375

300

n o 4.7 1017

0.28

0.032375

exp

1.15 10 14 cm

E F E E g E c E F 1.42 0.28
1.14 eV

375

300

3/2

p o 7 10 18

1.14

0.032375

exp

4.99 10 3 cm

(b)

4.7 10 17
14
1.15 10

E c E F 0.0259 ln

0.2154 eV

Semiconductor Physics and Devices: Basic Principles, 4th edition


Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

0.28
1.04 10 19 exp

0.0259
2.10 10 14 cm 3

E F E E g E c E F 1.42 0.2154
1.2046 eV

E c E F E g E F E
1.12 0.28 0.84 eV
Ec E F
n o N c exp

kT

1.2046
p o 7 10 18 exp

0.0259
4.42 10 2 cm 3
_______________________________________

4.21

375
0.032375 e
300

(a) kT 0.0259

0.84
2.8 10 19 exp

0.0259
2.30 10 5 cm 3
_______________________________________

375

300

3/ 2

n o 2.8 10 19

0.28
0
.
032375

exp

6.86 10 15 cm

4.23

E F E E g E c E F 1.12 0.28
0.840 eV

p o 1.04 10

19

3/ 2

375

300

7.84 10 7 cm

E F E Fi

kT

(a) n o n i exp

0.840
exp

0
.032375

E Fi E F

kT

p o n i exp

Nc

(b) E c E F kT ln

no

2.8 10 19
15
6.862 10
0.2153 eV

E F E Fi

kT

(b) n o n i exp

p o 1.04 10

Eg
4

p o N exp

1.12
0.28 eV
4

E F E

kT

0.22

0
.0259
3

E Fi E F

kT

p o n i exp

7.04 10 3 cm 3
_______________________________________

(b) E F E

8.80 10 9 cm

0.904668
exp
0.0259

4.22
(a) p-type

1.8 10 6 exp

E F E 1.12 0.2153 0.9047 eV


19

0.22
1.5 10 10 exp

0.0259
3.07 10 6 cm 3

0.0259 ln

0.22
1.5 10 10 exp

0.0259
7.33 10 13 cm 3

0.22

0.0259

1.8 10 6 exp

3.68 10 2 cm 3
_______________________________________
4.24

(a) E F E kT ln

p
o

Semiconductor Physics and Devices: Basic Principles, 4th edition


Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
(b)
19
E c E F 1.12 0.27873 0.84127 e
1.04 10

0.0259 ln
15

V
5 10

(c)
0.1979 eV
0.84127
n o 4.3109 10 19 exp
E

(b)
c
F E g E F E
0.034533

0.92212

0.0259

po
ni

19
(c) n o 2.8 10 exp

9.66 10 cm
(d) Holes
3

(e) E Fi E F kT ln

po
(e) E Fi E F kT ln
ni

1.134 10 9 cm
(d) Holes

1.12 0.19788 0.92212 eV

5 10 15
12
2.381 10
0.2642 eV

0.034533 ln

_______________________________________

5 10 15

0.0259 ln
10
1.5 10
0.3294 eV

4.26

_______________________________________

(a)

0.25
p o 7 1018 exp

0.0259
4.50 10 14 cm 3

E c E F 1.42 0.25 1.17 eV

4.25

400

300

1.17

0.0259

n o 4.7 10 17 exp

400
kT 0.0259
0.034533 eV
300

1.13 10 2 cm

3/ 2

N 1.04 10 19

1.601 10 19 cm

400

300

3/ 2

N c 2.8 1019

(b) kT 0.034533 eV
3

4.3109 1019 cm

n i2 4.3109 1019 1.601 10 19

1.12
0
.
034533

3
3/ 2

400

300

N c 4.7 10 17

7.236 10 17 cm

5.6702 10 24

N
(a) E F E kT ln
po

400

300

1.078 10 19 cm

exp

n i 2.381 10 12 cm

3/ 2

N 7 1018

N
po

E F E kT ln

1.601 1019
0.034533 ln
5 10 15

0.2787 eV

1.078 10 19

14
4.50 10
0.3482 eV
E c E F 1.42 0.3482 1.072

0.034533 ln

eV

Semiconductor Physics and Devices: Basic Principles, 4th edition


Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

n o 7.236 10 17

1.07177
exp

0.034533

Then F1 / 2

2.40 10 4 cm 3
_____________________________________

no

0.25
p o 1.04 1019 exp

0.0259
6.68 10 14 cm 3

(b) n o

E c E F 1.12 0.25 0.870

eV

0.870

0.0259

n o 2.8 10 19 exp
n o 7.23 10 4 cm

400

300

1.601 10

19

3/ 2

cm

400

300

5 10 19

3
3/ 2

So

N c 2.8 1019

4.311 10

19

cm

N
po

E F E kT ln

N c F1 / 2 F

4.7 10 1.0
17

N F1 / 2 F

1.04 10 F

19

1/ 2

F1 / 2 F 4.26
E E F

E E F
kT
3.0 0.0259 0.0777

eV
_______________________________________

4.30

E c E F 1.12 0.3482 0.7718 e


V

(a) F

E F E c 4kT

4
kT
kT

Then F1 / 2
no

F 6.0

N c F1 / 2 F

2.8 10 6.0
19

1.90 10 20 cm

4.28

For E F

0.77175
n o 4.311 10 19 exp

0.034533
8.49 10 9 cm 3
_______________________________________

(a) n o

We find F 3.0

1.601 10 19
14
6.68 10
0.3482 eV

0.034533 ln

4.29

(b) kT 0.034533 eV

19

5.30 1017 cm 3
_______________________________________

po

N 1.04 10 19

F 1.0
2
2.8 10 1.0

3.16 10 19 cm

4.27
(a)

E F E c kT 2

0. 5
kT
kT

N c F1 / 2 F

E c kT 2 ,

(b) n o

4.7 10 6.0
17

3.18 10 18 cm 3
_______________________________________
4.31
For the electron concentration

Semiconductor Physics and Devices: Basic Principles, 4th edition


Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

n E g c E f F E

The Boltzmann approximation applies, so

n E

4 2m
h

* 3/2
n
3

p E

E EF

kT

4 2m

kT

Ec E F

kT

E Ec
kT

n E n x K

x exp x

To find maximum n E n x , set


dn x
1 1 / 2
0 K
x
exp x
dx
2

p x K x exp x

To find maximum value of p E p x ,


set

dp x
0 Using the results from above,
dx

1
kT
2
_______________________________________
E E

4.32
(a) Silicon: We have

Ec E F

kT

n o N c exp

x 1 / 2 1 exp x

We can write

or
1

x
2

0 Kx 1 / 2 exp x
which yields

1 E Ec
1

E E c kT
2
kT
2

Ec E F Ec Ed Ed E F

For

E c E d 0.045 eV and
E d E F 3kT eV
we can write

2.8 10 exp 4.737

0.045

n o 2.8 10 19 exp
3
0
.
0259

For the hole concentration

p E g E 1 f F E

Using the Boltzmann approximation

p E

4 2m *p
h

3/ 2

E E

EF E

kT

exp
or

E E
kT

we find the maximum at

Then

exp

Then

Define

E F E

kT

3/2

Define

exp

E Ec
E Ec
exp

kT
kT

E E
E E
exp

kT
kT

kT

or

n E

E Ec

exp

* 3/ 2
n
3

4 2m *p

19

or

n o 2.45 10 17 cm
We also have

E F E

kT

p o N exp

Again, we can write

E F E E F E a E a E

For

E F E a 3kT and
E a E 0.045 eV
Then

Semiconductor Physics and Devices: Basic Principles, 4th edition


Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

p o 1.04 10 19

n i 7.334 10 11 cm

0.045
exp 3
0.0259

p o N a 4 10 15 cm

no

or

p o 9.12 10 16 cm

cm
(e)

(b) GaAs: assume E c E d 0.0058 eV


Then
0.0058

n o 4.7 10 17 exp
3
0.0259

4.7 10 exp 3.224

1.12 300

0.0259 450

p o 9.20 10 cm 3
_______________________________________
4.33
Plot
_______________________________________

3 10

15

3 10 cm
15

po

7.5 10 cm

4.35
(a)

10 2

po

3 1016

1.722 10 13

1.722 10

13 2

1.029 10

14

n i2
1.8 10 6

po
3 10 15

no

2.88 1012

1.08 10 3 c

1.8 10

6 2

7.5 10 cm
3

po

3 1016

1.08 10 4 cm

(c) n o p o n i 1.5 10 10 cm
(d)

375

300

n i2 2.8 10 19 1.04 10 19

1.12 300

0.0259 375

exp

(c) n o p o n i 1.8 10 6 cm
(d)

(b) n o N d 3 10 16 cm

p o N a N d 4 10 15 1015
3 10 15 cm

1.5 10

cm 3
_______________________________________

(b) n o N d 3 1016 cm

1.029 10 14 cm

16

no

10 14

10 14
no

or

1.5 10

450

300

exp

18

10 2

7 10 exp 4.332

p o 4 15 10

n i 1.722 10 13 cm

Assume E a E 0.0345 eV
Then
0.0345

p o 7 10 18 exp
3
0.0259

15

1.34 10 8

4 1015

n i2 2.8 10 19 1.04 10 19

or

4.34
(a)

17

n o 1.87 1016 cm

7.334 10

11 2

1.04 10 19 exp 4.737

375

300

n i2 4.7 1017 7.0 1018

1.42 300

0.0259 375

exp

Semiconductor Physics and Devices: Basic Principles, 4th edition


Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

n i 7.580 10 8 cm
p o N a 4 10 15 cm

no

7.580 10

8 2

4 10

(ii) p o N a N d 3 10 15 cm

no

1.44 10 2

15

450

300

4.37
(a) For the donor level

1.42 300

0.0259 450

nd

Nd

exp

n i 3.853 10 cm
n o N d 10 cm
14

10 2

po

10

1.48 10 7

14

(i) n o

Nd
N
d
2
2

2 10 15

or

cm 3
_______________________________________
4.36
(a) Ge: n i 2.4 10 13 cm

1
E EF
1
1 exp d
2
kT

1
0.20
1 exp

2
0.0259

3.853 10

1.08 10 3 cm

(c) The result implies that there is only one


minority carrier in a volume of 10 3 cm 3 .
_______________________________________

n i2 4.7 10 17 7.0 10 18

10

3 10

15

cm
(e)

1.8 10

6 2

nd
8.85 10 4
Nd
(b) We have

f F E

n i2

1 exp

1
E EF
kT

Now

2 10 15

2.4 10

13

E E F E Ec Ec E F

or

E E F kT 0.245

or

n o N d 2 1015 cm

po

n i2
2.4 1013

no
2 10 15

2.88 10 11 cm

3
2

Then

f F E

(ii) p o N a N d 10 16 7 10 15

3 10 15 cm

1.92 10 11 cm

n2
2.4 1013
no i
po
3 10 15
(b) GaAs: n i 1.8 10 6 cm
6 2

po

2 10 15

f F E 2.87 10 5
_______________________________________
4.38
(a) N a N d p-type
(b) Silicon:

1.62 10

0.245

1 exp 1

0
.0259

or

(i) n o N d 2 10 15 cm

1.8 10

cm

p o N a N d 2.5 1013 1 10 13
or

Semiconductor Physics and Devices: Basic Principles, 4th edition


Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

p o 1.5 10 13 cm
Then

n2
1.5 1010
no i
po
1.5 1013

no
2

1.5 10

4.40

Germanium:

po

4 10

5.625 10 4

15

cm 3
_______________________________________

cm

1.5 10

10 2

Na Nd
N Nd
a
2
2

n2
1.5 1010
no i
po
2 10 5

n i2

1.125 10 15 cm

1.5 10 13
2

1.5 10 13

2.4 10 13

or

p o 3.26 1013 cm
Then

no

n o p o n-type

_______________________________________
4.41

n i2
2.4 1013

1.76 1013 cm
po
3.264 10 13

Gallium Arsenide:
p o N a N d 1.5 10 13 cm
and

0.66

0.0259 250 300

1.8936 10 24

n i 1.376 1012 cm

4.39
(a) N d N a n-type
(b)
n o N d N a 2 1015 1.2 10 15

po

no

n i2
n2
1
i n o2 ni2
p o 4n o
4

1
ni
2
n o 6.88 10 11 cm

So

Then p o 2.75 10

po

Na
N
a
2
2

10 2

2.81 10 5 cm

no

n
1.5 10

no
8 10 14

_______________________________________

2
i

250

300

exp

n2
1.8 10 6
no i
0.216 cm 3
po
1.5 1013

8 10 14 cm

n i2 1.04 10 19 6.0 1018

2.752 10 12

cm

n i2

Na
2

Na
2

12

1.8936 10 24

Na

7.5735 10 24 2.752 1012 N a


(c)

p o N a N a N d

4 10

15

N a 1.2 10

15

2 10

N a 4.8 10 cm
15

15

Na

2

1.8936 10 24

so that N a 2.064 10 12 cm 3
_______________________________________

Semiconductor Physics and Devices: Basic Principles, 4th edition


Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
So N a 3.5 10 16 cm

4.42
Plot
_______________________________________
4.43
Plot
_______________________________________

1.5 10
10

no

5 10

4.5 10 3 cm

16

_______________________________________

4.44
Plot
_______________________________________
4.45

N Na
N Na
no d
d

2
2

1.1 1014

2 10

2 10 14 1.2 10 14

1.110

14

4 10 13

4.9 10

27

14

n i2

1.2 10
2

4.47
(a)

14

(b) p o

1.6 10

1.5 10

10 2

4 1013

27

n i2
n2
no i
no
po

no

n i2

so n i 5.74 10 13 cm

2 10

n i2

1.125 10 16 cm 3

electrons are majority carriers

2
i

p o 2 10 4 cm 3
holes are minority carriers
n

Nd Na
(c)
o

n i2 3.3 10 27
po

3 1013 cm
14
no
1.1 10

1.125 1016 N d 7 10 15

_______________________________________
4.46
(a)

p o n i n-type

so N d 1.825 1016 cm 3
_______________________________________
4.48

N a N d p-type

po
ni

E Fi E F kT ln

Majority carriers are holes

p o N a N d 3 10

16

1.5 10

16

1.5 10 cm 3
Minority carriers are electrons
16

n2
1.5 10 10
no i
po
1.5 10 16

For Germanium
T (K)
kT (eV)
200

1.5 10

400

0.01727
0.03453

600

0.0518

cm 3
(b) Boron atoms must be added

po

p o N a N a N d

Na
N
a
2
2

n i (cm

2.16 10
8.60 10 14
3.82 10 16
10

n i2 and

N a 10 15 cm
3

5 10

16

N a 3 10

16

1.5 10

16

T (K)

p o (cm

E Fi E F (eV)

Semiconductor Physics and Devices: Basic Principles, 4th edition


Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

1.0 10 15
1.49 10 15
3.87 10 16

200
400
600

0.1855
0.01898
0.000674

1.12

0.0259 T 300

exp

_______________________________________
4.49

Nc
(a) E c E F kT ln
Nd

By trial and error, T 536.5 K


(b) At T 300 K,

Nc
no

, E c E F 0.2056 eV

, E c E F 0.1459 eV

E c E F kT ln

, E F E Fi 0.2280 eV

cm

, E F E Fi 0.2877

10 16 cm

, E F E Fi 0.3473

cm

, E F E Fi 0.4070

10

15

eV
eV

10

17

eV
_______________________________________
4.50
(a) n o

Nd
N
d
2
2

n i2

0.5 10

15 2

0.5 10 15

Nc
no

300

6.696 1019
15
1.05 10

0.5124 eV

then E c E F 0.2472 eV
(c) Closer to the intrinsic energy level.
_______________________________________

E Fi E F kT ln

n i2 2.8 10 19 1.04 10 19

E c E F 0.046318 ln

po
ni

n i2

3/ 2

4.51

so n i2 5.25 10 28
Now

536.5

300

E c E F kT ln

n o 1.05 N d 1.05 10 cm
15

6.696 1019 cm

15

1.05 10

N c 2.8 10 19

cm

For 10

2.8 1019
10 15

0.2652 eV
At T 536.5 K,

1.5 10

536.5
0.046318 eV
300

14

kT 0.0259

Nd
10

E c E F 0.0259 ln

Nd

(b) E F E Fi kT ln

ni

exp

For 10 14 cm 3 , E c E F 0.3249 eV
10 15 cm 3 , E c E F 0.2652 eV

0.0259 ln

300

12972.973

2.8 10 19
0.0259 ln
Nd

10 16 cm
10 17 cm

5.25 10 28 2.912 10 38

At T 200 K, kT 0.017267 eV
T 400 K, kT 0.034533 eV
T 600 K, kT 0.0518 eV
At T 200 K,

Semiconductor Physics and Devices: Basic Principles, 4th edition


Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

200

300

For N a 1014 cm

n i2 2.8 10 19 1.04 10 19

2
i

2.8 10

19

N a 1015 cm

1.04 10

16

N a 1017 cm

2
i

2.8 10

19

N
Na

For N a 10
600

300

3 10 15

eV

16

N a 1017 cm

E F E 0.1100 eV
_______________________________________
4.53

n i2

m *p
3

kT ln
m n*
4

3
0.0259 ln 10
4

(a) E Fi E midgap

3 10 15

15

cm

9.740 10 14

or

E Fi E midgap 0.0447 eV
(b) Impurity atoms to be added so
E midgap E F 0.45 eV

T 400 K, E Fi E F 0.2465

(i) p-type, so add acceptor atoms


(ii)

E Fi E F 0.0447 0.45 0.4947 eV

T 600 K, E Fi E F 0.0630

Then

eV
_______________________________________

E EF
p o n i exp Fi
kT

4.52
(a)

Na
ni

E Fi E F kT ln

N a 10 cm 3 ,
E F E 0.1697 eV

Then, T 200 K, E Fi E F 0.4212


eV

E F E 0.2293 eV

3.288 10

cm

N a 1015 cm

n i 9.740 10 14 cm 3
At T 200 K and T 400 K,
p o N a 310 15 cm 3
At T 600 K,
Na
N
a
2
2

14

7.0 1018
Na

0.0259 ln

E F E 0.2889 eV

1.12
exp

0.0518

po

E F E kT ln

1.04 10
19

(b)

1.12
0
.
034533

n i 2.381 10 cm
At T 600 K,

E Fi E F 0.6408 eV

exp
12

N a 10 cm 3 ,
E F 0.5811 eV

E Fi
400

300

E Fi E F 0.5215 eV

19

E Fi E F 0.4619 eV

1.12
exp

0.017267

n i 7.638 10 4 cm
At T 400 K,

1.8 10

Na
6

0.4947
10 5 exp

0.0259

0.0259 ln

or

p o N a 1.97 10 13 cm 3
_______________________________________

Semiconductor Physics and Devices: Basic Principles, 4th edition


Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

4.54

0.13346

0.0259

N d 4.7 1017 exp

Ec E F
n o N d N a N c exp

kT

so

0.215
N d 5 10 15 2.8 10 19 exp

0.0259
5 10 15 6.95 10 15
or

N d 1.2 1016 cm 3
_______________________________________

Nc
Nd

(i) E c E F kT ln

N d 10 15
N d 1.718 10 15 cm 3
Additional
donor atoms
_______________________________________
4.56

(a) E Fi E F kT ln

N
a

1.04 1019
16
2 10

0.1620 eV

0.2188

eV
(ii)

E c E F 0.2188 0.0259 0.1929

Ec E F
N d N c exp

kT

Nc

(b) E F E Fi kT ln

N
d

2.8 1019
16
2 10

0.0259 ln

V
(c) For part (a);
p o 2 10 16 cm

1.125 10 4 cm

For part (b):

15

N d 1.031 1016 cm 3
Additional
donor atoms
(b) GaAs
4.7 1017

0
.
0259

ln
(i) c
F

10 15

0.15936 eV
(ii)
E c E F 0.15936 0.0259 0.13346
eV

0.1876 e

0.1929

0.0259

N d 1.631 10 16 cm

n2
1.5 1010
no i
po
2 10 16

2.8 1019 exp

N d 6 10

2.8 1019
15
6 10

0.0259 ln

0.0259 ln

4.55
(a) Silicon

eV

2.718 10 15 cm

n o 2 1016 cm

n2
1.5 1010
po i
no
2 10 16

1.125 10 4 cm 3
_______________________________________
4.57

E F E Fi

kT

n o n i exp

0.55
1.8 10 6 exp

0.0259
3.0 1015 cm 3

Semiconductor Physics and Devices: Basic Principles, 4th edition


Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
Add additional acceptor impurities

no N d N a
3 10

15

7 10

15

7.0 10 18
15
3 10

Na

N a 4 10 cm
_______________________________________

V
(b)

4.58

E F E 0.0259 ln

15

po
(a) E Fi E F kT ln
ni

0.0259 ln

0.2009 e

7.0 10 18
4
1.08 10

1.360 eV

(c) E F E 0.0259 ln

3 10
0.0259 ln
10
1.5 10
15

0.3161 e

7.0 10 18
6
1.8 10

0.7508 eV

375

300

(d) E F E 0.0259

no

(b) E F E Fi kT ln

ni

7.0 10 18 375 300 3 / 2

ln

3 10 16
0.0259 ln
10
1.5 10

0.3758 e

V
(c) E F E Fi

4 10 15

0.2526 eV
450

300

(e) E F E 0.0259

7.0 1018 450 300 3 / 2

ln

1.48 10 7

1.068 eV
_______________________________________

po
ni

(d) E Fi E F kT ln

4 10 15
375
ln
11
300
7.334 10
0.2786 eV

0.0259

(e) E F E Fi kT ln

ni

1.029 10 14
450
ln
13
300
1.722 10
0.06945 eV

0.0259

4.60
n-type

_______________________________________

no
ni

E F E Fi kT ln

(a) E F E kT ln

po

1.125 10 16

0.0259 ln

4.59

1.5 10 10

0.3504 e

V
______________________________________
4.61

Semiconductor Physics and Devices: Basic Principles, 4th edition


Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
donor
2
N
N
p o a a n i2
2
2
N d 0.05 7 10 15 3.5 10 14 cm

5.08 10

15

5 10 15

Replace As atoms

5 10
2

5.08 10

2.5 10 15

2.5 10

15

15

acceptor

n i2

(b) N a N d p-type
(c)

p o N a N d 6.65 10 15 3.5 10 14

n i2 4.064 10 29

6.3 10 15 cm

Eg

ni2 N c N exp

kT
350
kT 0.0259
0.030217 eV
300

350

300

1.633 10

350

300

N 1.8 10 19

6.3 10 15
6
1.8 10

0.0259 ln

2.45 10 19 cm

4.064 10 29 1.633 10 19 2.45 10 19

Eg

0.030217

So

1.633 10 19 2.45 1019

4.064 10 29

E g 0.030217 ln

E g 0.6257 eV
_______________________________________

4.62
(a) Replace Ga atoms

Silicon acts as a

0.5692 e

V
_______________________________________

Now

exp

po
ni

(d) E Fi E F kT ln

2
19

n i2
1.8 10 6
no

5.14 10 4 c
15
po
6.3 10

N a 0.95 7 10 15 6.65 10 15 cm

6.6564 10 30 6.25 10 30 n i2

N c 1.2 10

Silicon acts as an

15

n i2

19

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