NIKO-SEM

Dual N-Channel Enhancement Mode Field

PD1503YVS

SOP-8
Halogen-Free & Lead-Free

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

Q2

30V

15.8m

9A

Q1

30V

21m

8A

8
Q1

G : GATE
D : DRAIN
S : SOURCE

6
Q2

ABSOLUTE MAXIMUM RATINGS (T A = 25 C Unless Otherwise Noted)

SYMBOL

Q2

Q1

UNITS

Drain-Source Voltage

VDS

30

30

Gate-Source Voltage

VGS

20

20

TA = 25 C

Continuous Drain Current

ID

TA = 70 C
Pulsed Drain Current1

IDM

35

30

Avalanche Current

IAS

29

21

EAS

43

23

Avalanche Energy

L = 0.1mH
TA = 25 C

Power Dissipation
Junction & Storage Temperature Range

Tj, Tstg

mJ

PD

TA = 70 C

1.28
-55 to 150

SYMBOL

Schottky

UNITS

ABSOLUTE MAXIMUM RATINGS (T A = 25 C Unless Otherwise Noted)

VR = 25V

IR

0.05

mA

Forward Voltage

IF = 1A

VF

0.45

MAXIMUM

UNITS

62.5

C / W

THERMAL RESISTANCE RATINGS

SYMBOL

Junction-to-Ambient

TYPICAL

RJA

Pulse width limited by maximum junction temperature.

ELECTRICAL CHARACTERISTICS (T A = 25 C, Unless Otherwise Noted)

SYMBOL

TEST CONDITIONS

MIN

UNIT

TYP MAX

STATIC
Drain-Source Breakdown Voltage

Gate Threshold Voltage

V(BR)DSS

VGS = 0V, ID = 250A

VGS(th)

VDS = VGS, ID = 250A

REV 0.9

Q2

30

Q1

30

Q2

1.7

Q1

Oct-28-2009
1
Free Datasheet http://www.datasheet4u.com/

Dual N-Channel Enhancement Mode Field

NIKO-SEM

PD1503YVS

SOP-8
Halogen-Free & Lead-Free

Gate-Body Leakage

IGSS

VDS = 0V, VGS = 20V

VDS = 24V, VGS = 0V

Q2

100

Q1

100

Q2

Q1

-1

Q2

10

Q1

-10

IDSS
VDS = 20V, VGS = 0V, TJ = 125
C

On-State Drain Current1

ID(ON)

VDS = 5V, VGS = 10V

Drain-Source On-State Resistance

RDS(ON)

Q2

35

Q1

30
20

VGS = 10V, ID = 9A

10.5

15.8

VGS = 4.5V, ID = 6A

25.6

32

15.8

21

Q1

VGS = 10V, ID = 7A
Forward Transconductance1

gfs

A
14.2

Q2

nA

VDS = 10V, ID = 9A

Q2

25

VGS = 10V, ID = 7A

Q1

15

Q2

1040

Q1

560

N-Channel

Q2

295

VGS = 0V, VDS = 15V, f = 1MHz

Q1

160

Q2

139

Q1

84

Q2

1.5

Q1

Q2

20

Q1

11

Q2

VDS = 0.5V(BR)DSS, VGS = 10V,

Q1

5.5

ID = 9A

Q2

3.5

Q1

2.5

Q2

3.5

Q1

2.5

DYNAMIC
Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Gate Resistance

Rg
Qg

Total Gate Charge2

(VGS=10V)

Qg

Total Gate Charge2

(VGS=4.5V)
2

Gate-Source Charge
2

Gate-Drain Charge

VGS = 0V, VDS = 0V, f = 1MHz

Qgs

Qgd

REV 0.9

pF

nC

Oct-28-2009
2
Free Datasheet http://www.datasheet4u.com/

Dual N-Channel Enhancement Mode Field

NIKO-SEM

PD1503YVS

SOP-8
Halogen-Free & Lead-Free

Turn-On Delay Time2

Rise Time2

td(on)

VDS = 15V

tr

ID 1A, VGS = 10V, RGEN = 6

Turn-Off Delay Time

td(off)

tf

Q2

18

Q1

19

Q2

12

Q1

Q2

40

Q1

39

Q2

Q1

nS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T A = 25 C)

Forward Voltage1

Reverse Recovery Time

Reverse Recovery Charge

Q2

2.8

Q1

Q2:IF = 9A, VGS = 0V

Q2

0.7

Q1:IF = 7A, VGS = 0V

Q1

IS

VSD

Q2

15

Q2:IF = 9A,dIF/dt = 100 A/s

Q1

20

Q1:IF = 7A,dIF/dt = 100 A/s

Q2

Q1

12

trr

Qrr

nS

nC

Pulse test : Pulse Width 300 sec, Duty Cycle 2%.

REMARK: THE PRODUCT MARKED WITH PD1503YVS, DATE CODE or LOT #

REV 0.9

Oct-28-2009
3
Free Datasheet http://www.datasheet4u.com/

Dual N-Channel Enhancement Mode Field

NIKO-SEM

PD1503YVS

SOP-8
Halogen-Free & Lead-Free

Typical Characteristics: Q2
Output Characteristics
VGS = 10V

ID, Drain-To-Source Current(A)

ID, Drain-To-Source Current(A)

Transfer Characteristics
25

25

VGS = 4.5V
20

15
VGS = 3V

10

20

15

10
TJ=125C
TJ=25C
5
TJ=-20C
0
0.0

0
0

0.5

1.0

1.5

2.0

2.5

0.5 1.0 1.5 2.0 2.5 3.0 3.5

VDS, Drain-To-Source Voltage(V)

Capacitance Characteristic

2.0

RDS(ON)

1.8

RDS(ON)

1.6

RDS(ON)

1.4

RDS(ON)

1.2

RDS(ON)

1.0

RDS(ON)

0.8

RDS(ON)

0.6

1.50E+03

1.20E+03

RDS(ON)

Ciss

C , Capacitance(pF)

RDS(ON)ON-Resistance(OHM)

On-Resistance VS Temperature
RDS(ON)

V GS=10V
ID=9A

9.00E+02

6.00E+02

Coss

3.00E+02

Crss
0.00E+00

0.4
-50

-25

25

50

75

100

125

150

TJ , Junction Temperature(C)

10

15

20

25

30

VDS, Drain-To-Source Voltage(V)

Gate charge Characteristics

10

Source-Drain Diode Forward Voltage

IS , Source Current(A)

VGS , Gate-To-Source Voltage(V)

4.0

ID=9A
V DS=15V

1.0E+01
1.0E+00
T J =150 C
1.0E-01
T J =25 C
1.0E-02
1.0E-03

1.0E-04

12

16

0.1

20

Qg , Total Gate Charge

0.2

0.3

0.4

0.5

0.6

0.7

VSD, Source-To-Drain Voltage(V)

REV 0.9

Oct-28-2009
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Free Datasheet http://www.datasheet4u.com/

Dual N-Channel Enhancement Mode Field

NIKO-SEM

SOP-8
Halogen-Free & Lead-Free

Safe Operating Area

Single Pulse Maximum Power Dissipation

100

100
Operation in This
Area is Lim ited by
RDS(ON)

90

10

80

SINGLE PULSE
RJA = 62.5 C/W
TA=25 C

70

Power(W)

ID , Drain Current(A)

PD1503YVS

100us
1

1m s
10m s
100m s

0.1

NOTE :
1.V GS = 10V
2.T A=25 C
3.RJA = 62.5 C/W
4.Single Pulse

60
50
40
30

1S
10S
DC

20
10
0

0.01
0.1

10

0.0001

100

0.001

0.01

0.1

10

Single Pulse Time(s)

VDS, Drain-To-Source Voltage(V)

Transient Thermal Response Curve

Transient Thermal Resistance

r(t) , Normalized Effective

1.00E+01

1.00E+00
Duty Cycle=0.5

Note

0.2
0.1

1.00E-01

0.05
0.02

1.Duty cycle, D= t1 / t2
o
2.RthJA = 62.5 C/W
3.TJ-TA = P*RthJC(t)
4.RthJA(t) = r(t)*RthJA

0.01

single Pluse

1.00E-02
1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

T1 , Square Wave Pulse Duration[sec]

REV 0.9

Oct-28-2009
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Free Datasheet http://www.datasheet4u.com/

Dual N-Channel Enhancement Mode Field

NIKO-SEM

PD1503YVS

SOP-8
Halogen-Free & Lead-Free

Typical Characteristics: Q1
Output Characteristics

Transfer Characteristics
25

V GS = 10V
V GS = 4.5V

ID, Drain-To-Source Current(A)

ID, Drain-To-Source Current(A)

25

20

15
V GS = 3V
10

0.5
1.0
1.5
2.0
VDS, Drain-To-Source Voltage(V)

2.5

RDS(ON)

1.8

RDS(ON)

1.6

RDS(ON)

1.4

RDS(ON)

1.2

RDS(ON)

1.0

RDS(ON)

0.8

RDS(ON)

0.6

RDS(ON)

0.4

TJ=125 C
TJ=25 C

5
TJ=-20 C

0.5

1.5

2.0

2.5

3.0

3.5

4.0

Capacitance Characteristic

8.00E+02

V GS=10V
ID=7A

6.00E+02
Ciss

4.00E+02

2.00E+02
Coss
Crss
0.00E+00

-50

-25

25

50

75

100

125

150

TJ , Junction Temperature(C)

10

15

20

25

30

VDS, Drain-To-Source Voltage(V)

Gate charge Characteristics

10

Source-Drain Diode Forward Voltage

8
ID =9A

IS , Source Current(A)

VGS , Gate-To-Source Voltage(V)

1.0

1.00E+03

C , Capacitance(pF)

RDS(ON)ON-Resistance(OHM)

2.0

10

VGS, Gate-To-Source Voltage(V)

On-Resistance VS Temperature
RDS(ON)

15

0
0.0

0
0

20

V DS=15V

1.0E+01
1.0E+00
T J =150 C
1.0E-01
T J =25 C
1.0E-02
1.0E-03

1.0E-04

0
0

12

0.0

15

0.2

0.4

0.6

0.8

1.0

1.2

VSD, Source-To-Drain Voltage(V)

Qg , Total Gate Charge

REV 0.9

Oct-28-2009
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Free Datasheet http://www.datasheet4u.com/

Dual N-Channel Enhancement Mode Field

NIKO-SEM

SOP-8
Halogen-Free & Lead-Free

Safe Operating Area

Single Pulse Maximum Power Dissipation

100

100
Operation in This
Area is Limited by
RDS(ON)

80

SINGLE PULSE
RJA = 62.5 C/W
T A=25 C

70

Power(W)

ID , Drain Current(A)

90

10

100us
1

1ms
10ms

60
50
40

100ms

0.1

30

1S
10S
DC

NOTE :
NOTE=:10V
1.V
GS
1.V GS
= 10V
2.T
A=25 C
2.T=25
C
3.R
JA = 62.5 C/W
3.RJA = 3.5
4.Single
Pulse
C/W

0.1

0.01

20
10
0

10

100

0.0001

0.001

VDS, Drain-To-Source Voltage(V)

Transient Thermal Resistance

0.01

0.1

10

Single Pulse Time(s)

Transient Thermal Response Curve

1.00E+01

r(t) , Normalized Effective

PD1503YVS

1.00E+00
Duty Cycle=0.5

Note

0.2
0.1

1.00E-01

0.05
0.02

1.Duty cycle, D= t1 / t2
o
2.RthJA = 62.5 C/W
3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA

0.01

single Pluse

1.00E-02
1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

T1 , Square Wave Pulse Duration[sec]

REV 0.9

Oct-28-2009
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