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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The BDX77 is a silicon NPN power transistor in a TO-220C package. It has a low saturation voltage and is intended for medium power switching and amplifier applications. Key specifications include an 80V collector-emitter breakdown voltage, 1.0-1.5V saturation voltage at 3-6A collector currents, 30 typical DC current gain, and 7MHz transition frequency. It has a maximum junction temperature of 150°C and can dissipate up to 60W total power.

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63 views

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The BDX77 is a silicon NPN power transistor in a TO-220C package. It has a low saturation voltage and is intended for medium power switching and amplifier applications. Key specifications include an 80V collector-emitter breakdown voltage, 1.0-1.5V saturation voltage at 3-6A collector currents, 30 typical DC current gain, and 7MHz transition frequency. It has a maximum junction temperature of 150°C and can dissipate up to 60W total power.

Uploaded by

fercike
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor

Product Specification

BDX77

Silicon NPN Power Transistors

DESCRIPTION
With TO-220C package
Low saturation voltage
Complement to type BDX78
Wide area of safe operation
APPLICATIONS
For medium power switching and
amplifier applications
PINNING
PIN

DESCRIPTION

Base

Collector;connected to
mounting base

Emitter

Absolute maximum ratings (Ta=25 )


SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

100

VCEO

Collector-emitter voltage

Open base

80

VEBO

Emitter -base voltage

Open collector

IC

Collector current (DC)

ICM

Collector current-Peak

12

IB

Base current

PT

Total power dissipation

60

Tj

Junction temperature

150

Tstg

Storage temperature

-65~150

TC=25

THERMAL CHARACTERISTICS
SYMBOL
Rth j-C

PARAMETER
Thermal resistance junction to case

MAX

UNIT

2.08

/W

SavantIC Semiconductor

Product Specification

BDX77

Silicon NPN Power Transistors

CHARACTERISTICS
Tj=25

unless otherwise specified

SYMBOL

PARAMETER

V(BR)CEO

Collector-emitter breakdown voltage

IC=0.2A ;IB=0

80

V(BR)CBO

Collector-base breakdown voltage

IC=1mA ; IE=0

100

V(BR)EBO

Emitter-base breakdown voltage

IE=1mA ; IC=0

VCEsat-1

Collector-emitter saturation voltage

IC=3A; IB=0.3A

1.0

VCEsat-2

Collector-emitter saturation voltage

IC=6A; IB=0.6A

1.5

Base-emitter saturation voltage

IC=6A; IB=0.6A

2.0

ICEO

Collector cut-off current

VCE=30V ;IB=0;

0.2

mA

ICBO

Collector cut-off current

VCB=40V ;IE=0;Tj=150

1.0

mA

IEBO

Emitter cut-off current

VEB=5V; IC=0

0.5

mA

hFE

DC current gain

IC=1A ; VCE=2V

30

Transition frequency

IC=0.3A ; VCE=3V

7.0

Base-emitter on voltage

IC=3A;VCE=2V

VBEsat

fT
VBE

CONDITIONS

MIN

TYP.

MAX

UNIT

MHz
1.5

1.0

4.0

Switching times
ton

Turn-on time

toff

Turn-off time

IC=2A
IB1=-IB2=0.2A;

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors


PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:0.10 mm)

BDX77

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