Microelectronic Circuit Design

Third Edition - Part I

Solutions to Exercises
CHAPTER 1
Page 11
5.12V 5.12V 5.12V
VLSB = 10 = = 5.00 mV VMSB = = 2.560V
2 bits 1024bits 2
11000100012 = 29 + 28 + 2 4 + 20 = 78510 VO = 786(5.00mV ) = 3.925 V
or ( )
VO = 2−1 + 2−2 + 2−6 + 2−10 5.12V = 3.912 V

Page 12
The dc component is VA = 4V.
€ The signal consists of the remaining portion of vA: va = (5 sin 2000πt + 3 cos 1000 πt) Volts.

Page 19

iSC = i1 + βi1 =
vs v v
+ β s = (β + 1) s vOC =
(β + 1) R vS
S
R1 R1 R1 (β + 1) R + R
S 1

Rth =
vOC
=
(β + 1) RS R1 = 1
→ Rth = RS
R1
iSC (β + 1) RS + R1 (β + 1) (β + 1) 1 (β + 1)
+
R1 RS

Page 23
€ ( ) [ ( )]
vo = −5cos 2000πt + 25o = − −5sin 2000πt + 25o − 90 o = 5sin 2000πt − 65o ( )
5∠ − 65o
Vo = 5∠ − 65o Vs = 0.001∠0 o Av = o
= 5000∠ − 65o
0.001∠0

1
 Page 26
[
vs = 0.5sin (2000πt ) + sin (4000πt ) + 1.5sin (6000πt ) ]
The three spectral components are f1 = 1000 Hz f2 = 2000 Hz f3 = 3000 Hz
(a ) The gain of the band - pass filter is zero at both f and f . At f , V = 10(1V ) = 10V ,
1 3 2 o

and v = 10.0sin (4000πt ) volts.

O

(b) The gain of the low - pass filter is zero at both f and f . At f , V = 6(0.5V ) = 3V ,
2 3 2 o

and v = 3.00sin (2000πt ) volts.

O

Page 27
€ 39kΩ(1− 0.1) ≤ R ≤ 39kΩ(1+ 0.1) or 35.1 kΩ ≤ R ≤ 42.9 kΩ
3.6kΩ(1− 0.01) ≤ R ≤ 3.6kΩ(1+ 0.01) or 3.56 kΩ ≤ R ≤ 3.64 kΩ

Page 29
VS2 152
€ P= P nom = = 4.17 mW
R1 + R2 54kΩ
2 2

P max
=
(1.1x15) = 5.31 mW P min
=
(0.9x15) = 3.21 mW
0.95x54kΩ 1.05x54kΩ

Page 33
 10−3   10−3 
€ R = 10kΩ 1+ o (−55 − 25) oC = 9.20 kΩ R = 10kΩ 1+ o (85 − 25) oC = 10.6 kΩ
 C   C 

2
 CHAPTER 2
Page 47
 
3 −0.66eV
ni = (2.31x10 30
K cm
−3 −6
) (300K ) exp 8.62x10−5 eV / K 300K  = 2.27x1013 cm3

 ( ( ))

 
3 −1.12eV
ni = ( )
1.08x1031 K −3cm−6 (50K ) exp  = 4.34x10−39 cm3

−5
(
 8.62x10 eV / K (50K ) 
 )
 
3 −1.12eV
ni = (1.08x10 31
K cm
−3 −6
) (325K ) exp 8.62x10−5 eV / K 325K  = 4.01x1010 cm3

 ( )
( )
3 cm 3  −2 m 3 10
L = −39 
10  → L = 6.13x10 m
4.34x10  cm 

Page 48
cm2  V  3 cm cm 2  V  6 cm
€ v p = µ p E = 500 10  = 5.00x10 vn = −µn E = 1350 1000  = 1.35x10
V − s  cm  s V − s cm  s
V 1 V V
E= = = 5.00x103
L 2x10 cm
−4
cm

Page 48
vn 4.3x105 cm / s cm2 v p 2.1x105 cm / s cm2
€ µn = = = 4300 µp = = = 2100
E 100V / cm s E 100V / cm s
5
v 8.5x10 cm / s cm2
µn = n = = 8500
E 100V / cm s

3
 Page 50
3
 −1.12 
ni2 = 1.08x1031 (400) exp  = 5.40x1024 / cm 6
 8.62x10 −5
( )
400
1 1
ρ= = = 1450 Ω − cm
σ 1.60x10 −19
[( ) (
2.32x10 (1350) + 2.32x1012 (500)
12
) ]
3
 −1.12 
ni2 = 1.08x1031 (50) exp  = 1.88x10−77 / cm6
 8.62x10 (50) 
−5

1 1
ρ= = = 1.69x1053 Ω − cm
[( ) (
σ 1.60x10−19 4.34x10−39 (6500) + 4.34x10−39 (2000) ) ]
Page 54
3
 −1.12 
€ ni2 = 1.08x1031 (400) exp  = 5.40x1024 / cm 6
 8.62x10 (400) 
−5

holes ni2 5.40x1024 electrons

p = N A − N D = 1016 − 2x1015 = 8x1015 n= = = 6.75x108
cm3 p 8x1015
cm3
electrons ni2 1020 holes
n = N D = 2x1016 n= = = 5.00x103 n > p → n - type silicon
cm3 p 2x10 16
cm3

Page 55
Reading from the graph for NT = 1016/cm3, 1250 cm2/V-s and 400 cm2/V-s.
€ Reading from the graph for NT = 1017/cm3, 800 cm2/V-s and 230 cm2/V-s.

Page 57
(
σ = 1000 = 1.60x10−19 µn n → un n = 6.25x1021 / cm3 = 6.25x1019 (100) )
(a) N T = 2x1016 / cm 3 (b) N T = 5x1016 / cm3

4
 Page 58
holes ni2 1020 electrons
p = N A − N D = 4x1018 n= = = 25
cm3 p 4x10 18
cm3
4x1018
NT = and mobilities from Fig. 2.8
cm3
holes ni2 1020 electrons
p = N A − N D = 7x1019 3
n = = 19
= 1.4
cm p 7x10 cm3
7x1019
NT = and mobilities from Fig. 2.8
cm3
1 1
ρ= = = 1.79 mΩ − cm
[
σ 1.60x10 (1.4)(100) + 7x1019 (50)
−19
( ) ]
Page 59
kT 1.38x10 (50)
−23
€ VT = = = 4.31 mV
q 1.602x10−19
1.38x10−23 (300)
VT = = 25.8 mV
1.602x10−19
1.38x10−23 (400)
VT = = 34.5mV
1.602x10−19

Page 59
kT  cm2  cm 2 kT  cm2  cm2
€ Dn = µn = 25.8mV 1362  = 35.1 Dp = µ p = 25.8mV  492  = 12.7
q  V − s s q  V − s s
dn  cm2  1016  10 4 µm  A
jn = qDn = 1.60x10 C 20
−19
 3   = 320 2
dx  s  cm − µm  cm  cm
dp  cm2  1016  10 4 µm  A
j p = −qD p = −1.60x10−19 C 4  3   = −64 2
dx  s  cm − µm  cm  cm

5
 CHAPTER 3
Page 79
xn
1 0 qN A x p 1 qN D x n
Emax = ∫ −qN A dx = Emax =− ∫ qN D dx = For the values in Ex.3.2 :
εs −x p εs εs 0 εs

Emax =
( )(
1.6x10−19 C 1017 / cm3 1.13x10−5 cm ) = 175 kV
11.7(8.854x10 F / cm)
−14
cm

1.6x10 C (10 / cm )(1.13x10

−19 20 3 −8
cm ) = 175 kV
Emax =
11.7(8.854x10 F / cm)
−14
cm

2(1.05V ) kV
Emax = = 799
2.63x10 cm−6
cm
 2x1018 −1 −1
 1020 
x p = 0.0258µm1+  = 0.0253 µm xn = 0.0258µm1+ 18 
= 5.06x10−4 µm
 1020   2x10 

Page 82
1.602x10−19 (25.8mV )
€ T= = 291K
(
1.03 1.38x10−23 )
Page 84
  −0.04     −2.0  
€ iD = 5x10−15 Aexp  −1 = −3.99 fA iD = 5x10−15 Aexp  −1 = −5.00 fA
  0.025     0.025  

Page 86
 ID   40x10−6 A 
€ VBE = VT ln1+  = 0.025V ln1+  = 0.593 V
 IS   2x10 A 
−15

 ID   400x10−6 A 
VBE = VT ln1+  = 0.025V ln1+  = 0.651 V ΔVBE = 57.6 mV
 IS   2x10−15 A 
 ID   40x10−6 A 
VBE = VT ln1+  = 0.0258V ln1+  = 0.612 V
 IS   2x10 A 
−15

 ID   400x10−6 A 
VBE = VT ln1+  = 0.0258V ln1+  = 0.671 V ΔVBE = 59.4 mV
 IS   2x10−15 A 

Page 89
10V 2(10.979V ) kV
€ wd = 0.113µm 1+ = 0.378 µm Emax = = 581
0.979V 0.378x10 cm −4
cm

€ 6
 Page 89
10V
I S = 10 fA 1+ = 36.7 fA
0.8V

Page 92
€ (
11.7 8.854x10−14 F / cm ) nF nF
C jo =
0.113x10 cm
−4
= 91.7 2
cm
C j(0V ) = 91.7
cm 2( )( )
10−2 cm 1.25x10−2 cm = 11.5 pF

11.5 pF
C j (5V ) = = 4.64 pF
5V
1+
0.979V

Page 92
10−5 A −8 8x10−4 A −8 5x10−2 A −8
€ CD = 10 s = 4.00 pF CD = 10 s = 320 pF CD = 10 s = 0.02 µF
0.025V 0.025V 0.025V

Page 97
5V
€ Two points on the load line : VD = 0, I D = = 1 mA; I D = 0, VD = 5V
5kΩ

Page 108
From the answer, the diodes are on,on,off.
€
10V - VB VB − 0.6V − (−20V ) VB − 0.6V − (−10V )
I1 = I D1 + I D2 = + = 0 → VB = 1.87 V
2.5kΩ 10kΩ 10kΩ
1.87 − 0.6 − (−20V ) 1.87 − 0.6 − (−10V )
I D1 = = 2.13 mA I D2 = = 1.13 mA
10kΩ 10kΩ
VD3 = −(1.87 − 0.6) = −1.27 V

Page 110
5kΩ 1kΩ
€ Rmin = = 1.67 kΩ VO = 20V = 3.33 V (VZ is off) VO = 5 V (VZ is conducting)
20 5kΩ + 1kΩ
−1
5

Page 111
VL − 20V VL − 5V V 6.25V − 5V
€ + + L = 0 → VL = 6.25 V IZ = = 12.5mA
1kΩ 0.1kΩ 5kΩ 0.1kΩ
2
PZ = 5V (12.5mA) + 100Ω(12.5mA) = 78.1 mW

Page 112
0.1kΩ mV
€ Line Regulation = = 19.6 Load Regulation = 0.1kΩ 5kΩ = 98.0 Ω
0.1kΩ + 5kΩ V

7
€
 Page 117
7.91V I dc 15.8 A 1
Vdc = VP − Von = 6.3 2 −1 = 7.91 V Idc = = 15.8 A Vr = T= s = 0.527 V
0.5Ω C 0.5F 60
1 V 1  0.527V  180 o
ΔT = 2 r = 2  = 0.912 ms θ c = 120π ( 0.912ms ) = 19.7 o
ω VP 2π (60)  8.91V  π

Page 118
13.1V I dc 6.57 A 1
€ Vdc = VP − Von = 10 2 −1 = 13.1 V Idc = = 6.57 A C= T= s = 1.10 F
2Ω Vr 0.1F 60
1 V 1  0.1V  180 o
ΔT = 2 r = 2  = 0.316 ms θ c = 120π (0.316ms) = 6.82 o
ω VP 2π (60) 14.1V  π

Page 118
kT  I D   48.6 A 
€ For VT = 0.025V , VD = ln1+  = 0.025V ln1+ −15  = 0.961 V
q  IS   10 A 
kT  I D  1.38x10 J / K (300K )  48.6 A 
−23

VD = ln1+  = ln1+ −15  = 0.994 V

q  IS  1.60x10−19 C  10 A 
kT  I D  1.38x10 J / K (273K + 50K )  48.6 A 
−23

VD = ln1+  = ln1+ −15  = 1.07 V

q  IS  1.60x10−19 C  10 A 

8
 CHAPTER 4
Page 151
'
(i) K = µn
εox
= 500
( 14
cm2 3.9 8.854x10 F / cm )
= 69.1x10−6 2
C µA
= 69.1 2
n
Tox V −s 25x10 cm
−7
V −s V

W µA  20µm  µA µA  60µm  µA
(ii) Kn = Kn' = 50 2   = 1000 2 Kn = 50 2   = 1000 2
L V  1µm  V V  3µm  V
µA  10µm  µA
Kn = 50 2   = 2000 2
V  0.25µm  V

(iii) For VGS = 0V and 1V , VGS < VTN and the transistor is off. Therefore ID = 0.

VGS - VTN = 2 -1.5 = 0.5V and VDS = 0.1 V → Triode region operation
W V  µA  10µm  0.1
I D = Kn' VGS − VTN − DS VDS = 25 2  2
 2 −1.5 − 0.1V = 11.3 µA
L 2  V  1µm  2

VGS - VTN = 3 -1.5 = 1.5V and VDS = 0.1 V → Triode region operation
W V  µA  10µm  0.1
I D = Kn' VGS − VTN − DS VDS = 25 2  2
 3 −1.5 − 0.1V = 36.3 µA
L 2  V  1µm  2

µA  100µm  µA
Kn' = 25 2   = 250 2
V  1µm  V

Page 152
1 1 1
€ Ron = = = 4.00 kΩ Ron = = 1.00 kΩ
' W µA µA
Kn (VGS − VTN ) 250 2 (2 −1) 250 2 (4 −1)
L V V
1 1
VGS = VTN + = 1V + = 3.00 V
Kn Ron µA
250 2 (2000Ω)
V

9
 Page 155
VGS - VTN = 5 -1 = 4 V and VDS = 10 V → Saturation region operation
Kn 2 1 mA 2 2
ID =
2
(VGS − VTN ) =
2 V2
( 5 −1) V = 8.00 mA

W W 1mA 25
Kn = Kn' → = = W = 25L = 8.75 µm
L L 40µA 1

Assuming saturation region operation,

K 2 1 mA 2
€ I D = n (VGS − VTN ) = 2 (
2.5 −1) V 2 = 1.13 mA
2 2V
mA
g m = Kn (VGS − VTN ) = 1 2 (2.5 −1)V = 1.50 mS
V
2(1.125mA)
Checking : g m = = 1.50 mS
(2.5 −1)V
Page 156
(i) VGS - VTN = 5 -1 = 4 V and VDS = 10 V → Saturation region operation
€
Kn 2 1 mA 2
ID =
2
(VGS − VTN ) (1+ λVDS ) =
2V 2 ( [ ]
5 −1) V 2 1+ 0.02(10) = 9.60 mA

K 2 1 mA 2
I D = n (VGS − VTN ) (1+ λVDS ) =
2 2V 2 ( [ ]
5 −1) V 2 1+ 0(10) = 8.00 mA

(ii) VGS - VTN = 4 -1 = 3 V and VDS = 5 V → Saturation region operation

Kn 2 25 µA 2 2
ID =
2
(VGS − VTN ) (1+ λVDS ) =
2 V2
( 4 −1) [ ]
V 1+ 0.01(5) = 118 µA

K 2 25 µA 2
I D = n (VGS − VTN ) (1+ λVDS ) =
2 2 V 2 ( [ ]
5 −1) V 2 1+ 0.01(10) = 220 µA

Page 157
Kn 2 50 µA 2
€ (i) Assuming pinchoff region operation, I D =
2
( 0 − VTN ) =
2 V 2 (
+2V ) = 100 µA

2I D 2(100 µA)
VGS = VTN + = 2V + = 4.00 V
Kn 50µA /V 2
Kn 2 50 µA 2
(ii) Assuming pinchoff region operation, I D =
2
(VGS − VTN ) =
2 V 2 [ ]
1− (−2V ) = 225 µA

10
 Page 159
(i) VTN = VTO + γ ( ) (
VSB + 0.6V − 0.6V = 1+ 0.75 0 + 0.6 − 0.6 = 1 V )
( ) (
VTN = 1+ 0.75 1.5 + 0.6 − 0.6 = 1.51 V VTN = 1+ 0.75 3 + 0.6 − 0.6 = 1.84 V )
(ii − a) VGS is less than the threshold voltage, so the transistor is cut off and ID = 0.

(b) VGS - VTN = 2 -1 = 1 V and VDS = 0.5 V → Triode region operation

 V  mA  0.5  2
I D = KnVGS − VTN − DS VDS = 1 2  2 −1− 0.5V = 375 µA
 2  V  2 

(c) VGS - VTN = 2 -1 = 1 V and VDS = 2 V → Saturation region operation

Kn 2 mA 2
ID =
2
( V
[
VGS − VTN ) (1+ λVDS ) = 0.5 2 (2 −1) V 2 1+ 0.02(2) = 520 µA ]
Page 160
€ (a ) VGS is greater than the threshold voltage, so the transistor is cut off and ID = 0.

( b) V GS - VTN = -2 + 1 = 1 V and VDS = 0.5 V → Triode region operation

 V  mA  −0.5  2
I D = KnVGS − VTN − DS VDS = 0.4 2  −2 + 1− (−0.5)V = 150 µA
 2  V  2 

(c) V GS - VTN = −2 + 1 = 1 V and VDS = 2 V → Saturation region operation

Kn 2 0.4 mA 2 2
ID =
2
(VGS − VTN ) (1+ λVDS ) =
2 V2
( −2 + 1) [
V 1+ 0.02(2) = 208 µA ]
Page 165
2
€ Active area = 120Λ2 = 120(0.5µm) = 30 µm2 L = 2Λ = 1µm W = 10Λ = 5µm
2

2 2
Gate area = 20Λ = 20(0.5µm ) = 5 µm 2
N=
(10 µm)
4

= 1.79 x 106 transistors

2
(14Λ)(16Λ)(0.5µm)

11
 Page 167
 µF 
( )( )
CGC = 200 2  5x10−6 m 0.5x10−6 m = 0.500 fF
 m 
CGC  pF 
Triode region : CGD = CGS =
2
+ CGSOW = 0.25 fF +  300
 m 
( )
 5x10 m = 1.75 fF
−6

2  pF 
Saturation region : CGS = CGC + CGSOW = 0.333 fF +  300
3  m 
( −6
)
 5x10 m = 1.83 fF

 pF 
CGD = CGSOW =  300
 m
( )
 5x10 m = 1.50 fF
−6

Page 169
€
KP = Kn = 150U LAMBDA = λ = 0.0133 VTO = VTN = 1 PHI = 2φ F = 0.6
W = W = 1.5U L = L = 0.25U

Page 173
€ (i) Assume saturation region operation and λ = 0. Then I D is indpendent of VDS , and ID = 50 µA.
VDS = VDD − I D RD = 10 − 50kΩ(50µA) = 7.50 V. VDS ≥ VGS − VTN , so our assumption was correct.
Q - Point = (50.0 µA, 7.50 V )

270kΩ
(ii ) VEQ =
270kΩ + 750kΩ
10V = 2.647 V R EQ = 270kΩ 750kΩ Assume saturation region.

25x10−6 A 2
ID = 2 (
2.647 −1) V 2 = 33.9 µA VDS = VDD − I D RD = 10 −100kΩ(33.9µA) = 6.61 V.
2 V
VDS ≥ VGS − VTN , so our assumption was correct. Q - Point = (33.9 µA, 6.61 V )

30x10−6 A 2
(iii ) VGS does not change : VGS = 3.00 V. I D = 2 V 2 (3 −1) V 2 = 60.0 µA
VDS = VDD − I D RD = 10 −100kΩ(60.0µA) = 4.00 V. VDS ≥ VGS − VTN , so our assumption was correct.
Q - Point = (60.0 µA, 4.00 V )

25x10−6 A 2 2
(iv ) VGS does not change : VGS = 3.00 V. I D = 2 V2
( 3 −1.5) V = 28.1 µA

VDS = VDD − I D RD = 10 −100kΩ(28.1µA) = 7.19 V. VDS ≥ VGS − VTN , so our assumption was correct.
Q - Point = (28.1 µA, 7.19 V )

€
12
 Page 174

VDS = 10 −
25x10−6 105 ( ) (3 −1) (1+ 0.01V ) → V
2
= 10 − 5(1+ 0.01VDS )
DS DS
2
10 − 5 25x10−6 2
VDS =
1.05
V = 4.76 V ID =
2
( [ ]
3 −1) 1+ 0.01(4.76) = 52.4 µA

Page 176
10V
€ For I D = 0, VDS = 10 V. For VDS = 0, I D = = 150µA.
66.7kΩ
The load line intersects the VGS = 3 - V curve at I D = 50 µA, VDS = 6.7 V.

Page 178
€
(i ) 4 = V +
(
30x10−6 3.9x10 4 ) (V 2
−1) → VGS2 − 0.291VGS − 5.838 = 0 → VGS = 2.566V , − 2.275V
GS GS
2
30x10 −6
2
ID =
2
( 2.566 −1) = 36.8 µA VDS = 10 −114kΩ(36.8µA) = 5.81 V

Q - Point : (36.8 µA,5.81 V )

(ii ) 4 = V +
(
25x10−6 3.9x10 4 ) (V 2
−1.5) → VGS2 − 0.949VGS − 5.955 = 0 → VGS = 2.960V , − 2.012V
GS GS
2
25x10 −6
2
ID =
2
( 2.960 −1.5) = 26.7 µA VDS = 10 −114kΩ(26.7µA) = 6.96 V

Q - Point : (26.7 µA,6.96 V )

(ii ) 4 = V +
(
25x10−6 6.2x10 4 ) (V 2
−1) → VGS2 − 0.710VGS − 4.161 = 0 → VGS = 2.426V , −1.716V
GS GS
2
25x10 −6
2
ID =
2
( 2.426 −1) = 25.4 µA VDS = 10 −137kΩ(25.4µA) = 6.52 V

Q - Point : (25.4 µA,6.52 V )

13
 Page 180
(i) Assume saturation. For I D = 99.5µA, VGS = 4V - 99.5µA(1.8kΩ) = 3.821V
25µA 2
ID =
2
( 3.821−1) = 99.5µA which agrees. VDS = 10V − 99.5µA(40.8kΩ) = 5.94 V

Saturation region operation is correct.

1.5MΩ
(ii ) VEQ =
1.5MΩ + 1MΩ
10V = 6.00 V REQ = 1.5MΩ 1MΩ = 600kΩ Assume saturation region.

6 = VGS +
25x10−6 22x103 ( (
) 2
VGS −1) → VGS2 + 1.636VGS − 20.82 = 0 → VGS = 3.818V
2
25x10 −6
2
ID =
2
( 3.818 −1) = 99.3 µA VDS = 10 − 40kΩ(99.3µA) = 6.03 V

Saturation region operation is correct. Q - Point : (99.3 µA, 6.03 V )

10V R1 6V
(iii ) R + R
1 2 =
2µA
= 5MΩ
R1 + R2
10V = 6V → R1 = 5MΩ
10V
= 3 MΩ → R2 = 2 MΩ

REQ = 3MΩ 2 MΩ = 1.2 MΩ

Page 182
25µA 2
€ (
VGS = 6 − 22000I D VSB = 22000I D VTN = 1+ 0.75 VSB + 0.6 − 0.6 ) ID =
2
(VGS − VTN )

Spreadsheet iteration yields ID = 83.2 µA.

Page 183
€ [ (
Equation 4.55 becomes 6 - 1 + 0.75 VSB + 0.6 − 0.6 + 2.83 − VSB = 0. ) ]
VSB2 − 6.065VSB + 7.231 = 0 → VSB = 1.63V.

RS =
1.63V
= 16.3 kΩ →16 kΩ RD =
(10 − 6 −1.63)V = 23.7kΩ → 24 kΩ
10−4 A 10−4 A

Page 185
2x10−4 (10kΩ) 2
€ (i) Using Eq. (4.58) VGS = 3.3 − (V GS −1) → VGS2 − VGS − 2.3 = 0 → VGS = 2.097V
2
2x10 −4
2
VGS =
2
( 2.097 −1) = 120.3µA VDS = VGS Q - Po int : (120 µA, 2.10 V )

(ii ) Since there was no voltage drop across RG in (i), the equations and answers are identical to
the first part.

€
14
 Page 186
4 − VDS  V  4 − VDS
6
= 2.5x10−4 4 −1− DS VDS → VDS = 2.96 mV ID = = 2.22 µA
1.8x10  2  1.8x106
2.22µA
Q - Po int : (2.22 µA, 2.96 mV ) Checking; I D Ron = = 2.96 mV
2.5x10−4 (4 −1)

Page 189
€
(i ) 10 − 6 =
(
25x10−6 62x10 4 ) (V 2
+ 1) − VGS → VGS2 + 0.710VGS − 4.161 = 0 → VGS = −2.426V , + 1.716V
GS
2
25x10 −6
2
ID =
2
( −2.426 + 1) = 25.4 µA [ ]
VDS = − 10 −137kΩ(25.4µA) = −6.52 V

Q - Point : (25.4 µA, - 6.52 V )

Page 192
€ 2
 1µm 2 2
(i) Circuits/cm ∝ α =  0.25µm  = 16
1 1 1
Power - Delay Product ∝ 3
= 3= → 64 times improvement
α 4 64
ε W /α  v 
(ii) iD* = µn T ox/ α L / α vGS − VTN − 2DS vDS = α iD P * = VDDiD* = VDD (α iD ) = α P
ox

P* αP P
*
= = α3
A (W / α )( L / α ) A

1 500cm2 /V − s 1 500cm2 /V − s
(iii ) fT = 2π 2 (1V ) = 7.96 GHz fT =
2π 0.25x10−4 cm 2
(1V ) = 127 GHz
10−4 cm ( ) ( )
Page 193
The field in the first sentence at the top of the page should be 105 V / cm.
€
V V  V  −4  5 V  −5
L
= 10 4
cm
→ L = 105
 cm 
(
 10 cm = 10 V L = 10 ) cm 
 10 cm = 1 V ( )

15
 CHAPTER 5
Page 213
αF 0.970 0.993 0.250
βF = = = 32.3 βF = = 142 βF = = 0.333
1− α F 1− 0.970 1− 0.993 1− .250
βF 40 200 3
αF = = = 0.976 αF = = 0.995 αF = = 0.750
β F + 1 41 201 4

Page 215
  0.700   −9.30  10−15 A   −9.30  
€ iC = 10−15 Aexp  − exp  − exp  −1 = 1.45 mA
  0.025   0.025  0.5   0.025  

  0.700   −9.30  10−15 A   0.700  

iE = 10−15 Aexp  − exp  + exp  −1 = 1.46 mA
  0.025   0.025  100   0.025  

10−15 A   0.700   10−15 A   −9.30  

iB = exp  −1 + exp  −1 = 14.5 µA
100   0.025   0.5   0.025  

Page 217
  0.750   0.700  10−16 A   0.700  
€ iC = 10−16 Aexp  − exp  − exp  −1 = 563 µA
  0.025   0.025  0.4   0.025  

  0.750   0.700  10−16 A   0.750  

iE = 10−16 Aexp  − exp  + exp  −1 = 938 µA
  0.025   0.025  75   0.025  

10−16 A   0.750   10−16 A   0.700  

iB = exp  −1 + exp  −1 = 376 µA
75   0.025   0.4   0.025  

Page 217
  0.750   −2 
€ iT = 10−15 Aexp  − exp  = 10.7 mA
  0.025   0.025

  0.750   −5 
iT = 10−16 Aexp  − exp  = 1.07 mA
  0.025   0.025

16
 Page 220
I   10−4 A 
VBE = VT ln C + 1 = 0.025V ln −16 + 1 = 0.691 V
 IS   10 A 
I   10−3 A 
VBE = VT ln C + 1 = 0.025V ln −16 + 1 = 0.748 V
 IS   10 A 

Page 221

€ npn :VBE > 0, VBC < 0 → Forward − Active Region pnp :VEB > 0, VCB > 0 → Saturation Region

Page 223
αF 0.95 αR 0.25 1
€ βF = = = 19 βR = = =
1− α F 0.05 1− α R 0.75 3
 1  1 
VBE = 0, VBC << 0 IC = I S 1+  = 10−16 A1+  = 0.400 fA
 βR   0.333 
IS 10−16 A
I E = I S = 0.100 fA IB = − =− = −0.300 fA
βR 0.333

IS
VBE << 0, VBC << 0 IC = = 3x10−16 A = 0.300 fA
βR
I S 10−16 A IS IS 10−16 A 10−16 A
IE = = = 5.26 aA IB = − − =− − = −0.305 fA
βF 19.0 βF βR 19.0 1/ 3

Page 225

€
(a ) The currents do not depend upon VCC as long as the collector - base junction is reverse
biased. (Later when Early votlage VA is discussed, one should revisit this problem.)
IE 100µA
( b) I E = 100 µA, I B =
βF + 1
=
51
= 1.96 µA, IC = β F I B = 50I B = 98.0 µA

I   98.0µA 
VBE = VT ln C + 1 = 0.025V ln −16 + 1 = 0.690 V
 IS   10 A 

17
 Page 226
(a ) The currents do not depend upon VCC as long as the collector - base junction is reverse
biased. (Later when Early voltage VA is discussed, one should revisit this problem.)
(b) Forward - active region : I B = 100 µA, I E = (β F + 1) I B = 5.10 mA, IC = β F I B = 5.00 mA
I   5.00mA 
VBE = VT ln C + 1 = 0.025V ln −16 + 1 = 0.789 V Checking : VBC = −5 + 0.789 = −4.21 V
 IS   10 A 
(c) Forward - active region with V CB ≥ 0 requires VCC ≥ VBE or VCC ≥ 0.764 V

Page 228
€ −0.7V − (−9V ) I
IE = = 1.48 mA I B = E = 29.1 µA, IC = β F I B = 1.45 mA
5.6kΩ βF + 1
VCE = VC − VE = (9 − 4300IC ) − (−0.7) = 3.47 V Q - Point : (1.45 mA, 3.47 V)

βF + 1 51 −0.7V − (−9V ) 8.3V

IE = IC = 100µA = 102µA R = = = 81.4 kΩ
βF 50 102µA 102µA
Nearest 5% value is 82 kΩ.

Page 229
−0.7V − (−9V ) IE
€ (i ) I E = 5.6kΩ = 1.48 mA IB =
βF + 1
= 29.1 µA, IC = β F I B = 1.45 mA

β +1 51 I 
(
(ii ) I E = Fβ IC = 50 IC = 1.02IC VBE = VT ln IC + 1 = 0.025ln 2x1015 IC + 1
F S
)
  V  
VBE + 8200 5.10x10−16 exp BE  −1 = 9 → VBE = 0.7079 V using a calculator solver or spreadsheet.
  0.025  
 0.7079 
IC = 5x10−16 exp  = 992 µA VCE = 9 − 4300IC − (−0.708) = 5.44 V
 0.025 

Page 229
I 2x10−14 A
€ I SD = SBJT = = 21.0 fA
αF 0.95

Page 232
−0.7V − (−9V ) −IC
€ −IC = = 1.48 mA IB = = 0.741 mA, - I E = β R I B = 0.741 mA
5.6kΩ βR + 1

18
 Page 234
 1mA 
 1+ 
 1  2(40µA) 
(i ) VCESAT = (0.025V ) ln 0.5 1mA 
= 99.7 mV
 1− 
 50(40µA) 
 
 
 0.1mA + (1− 0.5)1mA
(ii ) VBE = (0.025V ) ln 1 
= 0.694 mV
 10 A 50 + 1− 0.5 
−15

  
 
 1mA 
0.1mA −
VBC = (0.025V ) ln 50  = 0.627 mV VBE − VBC = 67.7mV
 −15  1  1 
10 A 0.5 50 + 1− 0.5
   

Page 237
€ kT
Dn =
q
(
µn = 0.025V 500cm2 /V − s = 12.5cm2 / s )
IS = =
2 −4
( 2
)( 20
qADn ni2 1.6x10 C 50µm 10 cm / µm 12.5cm / s 10 / cm
−19 6
)(
= 10−18 A
)( )
N ABW 18 3
10 / cm (1µm) ( )
Page 240
(1.38x10 −23
)
J / K (373K ) IC 10 A
€ (i ) VT =
1.60x10 C −19
= 32.2mV CD =
VT
τF =
0.0322V
( )
4x10−9 s = 1.24 µF

f 300 MHz
(ii ) fβ = T =
βF 125
= 2.40 MHz

Page 241
 0.7  10   10  1.74mA
€ (a) IC = 10−15 Aexp 1+  = 1.74 mA β F = 751+  = 90.0 I B = = 19.3 µA
 0.025 50   50  90.0
 0.7  1.45mA
(b) IC = 10−15 Aexp  = 1.45 mA β F = 75 I B = = 19.3 µA
 0.025 75

Page 243

€ ( )
g m = 40 10−4 = 4.00 mS ( )
g m = 40 10−3 = 40.0 mS
CD = 4.00mS (25 ps) = 0.100 pF CD = 40.0mS (25 ps) = 1.00 pF

€
19
 Page 249
180kΩ
VEQ = 12V = 4.00V | REQ = 180kΩ 360kΩ = 120kΩ
180kΩ + 360kΩ
4.00 − 0.7 V
IB = = 2.470µA | IC = 75I B = 185.3µA | I E = 76I B = 187.7µA
120 + (75 + 1)16 kΩ
VCE = 12 − 22000IC −16000I E = 4.92V | Q - po int : (185 µA, 4.92 V )

Page 250
I 50I
€ (i) I2 = 5C = 5 B = 10I B

18kΩ
(ii) V EQ =
18kΩ + 36kΩ
12V = 4.00V | REQ = 18kΩ 36kΩ = 12kΩ

4.00 − 0.7 V
IB = = 0.4111µA | IC = 500I B = 205.5µA | I E = 76I B = 206.0µA
12 + (500 + 1)16 kΩ
VCE = 12 − 22000IC −16000I E = 4.18V | Q - po int : (206 µA, 4.18 V )

Page 251
The voltages all remain the same, and the currents are reduced by a factor of 10. Hence all
€ the resistors are just scaled up by a factor of 10.
120 kΩ →1.2 MΩ 82 kΩ → 820 kΩ 6.8 kΩ → 68 kΩ

Page 253
 76 
€ (i ) V
CE = 0.7 V at the edge of saturation. 0.7V = 12V -  RC + 16kΩ(205µA) → RC = 38.9 kΩ
 75 
(ii ) V BESAT = 4 −12kΩ(24µA) −16kΩ(184µA) = 0.768 V
VCESAT = 12 − 56kΩ(160µA) −16kΩ(184µA) = 0.096 V

Page 254
9 − 0.7 V
€ IB = = 95.4µA | IC = 50I B = 4.77 mA | I E = 76I B = 187.7µA
36 + (50 + 1)1 kΩ
VCE = 9 −1000( IC + I B ) = 4.13V | Q - po int : (4.77 mA, 4.13 V )

20