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Datasheet 2 N 1722

This document provides technical data for two NPN silicon high power transistors, the 2N1722 and 2N1724, which are qualified per military specification MIL-PRF-19500/262. It lists maximum ratings for voltage, current, power dissipation and temperature, as well as electrical characteristics including cutoff currents, forward current transfer ratio, saturation voltages, and output capacitance.

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146 views2 pages

Datasheet 2 N 1722

This document provides technical data for two NPN silicon high power transistors, the 2N1722 and 2N1724, which are qualified per military specification MIL-PRF-19500/262. It lists maximum ratings for voltage, current, power dissipation and temperature, as well as electrical characteristics including cutoff currents, forward current transfer ratio, saturation voltages, and output capacitance.

Uploaded by

ikol1230
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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TECHNICAL DATA

NPN SILICON HIGH POWER TRANSISTOR


Qualified per MIL-PRF-19500/262

Devices Qualified Level

JAN
2N1722 2N1724
JANTX

MAXIMUM RATINGS
Ratings Symbol Value Units
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 175 Vdc
Emitter-Base Voltage VEBO 10 Vdc
TO-61*
Collector Current IC 5.0 Adc
2N1724
Total Power Dissipation @ TA = +250C(1) PT 3.0 W
@ TC = +1000C (2) 50 W
Temperature Range: Operating TOP, 175 0
C
Storage Junction Tstg -65 to +200
1) Derate linearly 20 mW/0C for TA between +250C and +1750C TO-53*
2) Derate linearly 666 mW/0C for TC between +1000C and +1750C 2N1722
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO 80 Vdc
IC = 200 mAdc
Emitter-Base Breakdown Voltage
V(BR)EBO 10 Vdc
IE = 10 mAdc
Collector-Emitter Cutoff Current
ICES 300 µAdc
VCE = 60 Vdc
Collector-Base Cutoff Current
ICBO 5.0 mAdc
VCB = 175 Vdc
Emitter-Base Cutoff Current
IEBO 400 µAdc
VEB = 7.0 Vdc

6 Lake Street, Lawrence, MA 01841 120101


1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 1 of 2
2N1722, 2N1724 JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)


Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS
Forward-Current Transfer Ratio
IC = 2.0 Adc, VCE = 15 Vdc hFE 30 120
IC = 5.0 Adc, VCE = 15 Vdc 15
IC = 100 mAdc, VCE = 15 Vdc 30
Collector-Emitter Saturation Voltage
VCE(sat) 0.6 Vdc
IC = 2.0 Adc, IB = 200 mAdc
Base-Emitter Saturation Voltage
VBE(sat) 1.2 Vdc
IC = 2.0 Adc, IB = 200 mVdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 500 mAdc, VCE = 15 Vdc; f = 10 MHz hfe 1.0 5.0
Output Capacitance
Cobo 550 pF
VCB = 15 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz

6 Lake Street, Lawrence, MA 01841 120101


1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 2 of 2

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