TVS Diode

Applications Training

Version01_100407
 TVS Diodes

Leaded Surface Mount

Version01_100407
TVS Diodes

 A TVS Diode is a clamping device that limits harmful voltage spikes

 Silicon Avalanche Diodes are also known as TVS Diodes
 TVS stands for “Transient Voltage Suppressor”
 A TVS Diode is a semiconductor device utilizing a silicon PN junction
 TVS Diodes offer protection from medium to very high energy
transients
 It is used to protect sensitive components from electrical overstress
generated by induced lightning, inductive load switching and
electrostatic discharge

Version01_100407
What is an Avalanche Diode?

 An avalanche diode is a diode that is designed to break down and conduct

electricity at a specific reverse bias voltage
 Protects electronic circuits against damaging high voltage transients
 The avalanche diode is connected to the circuit so that it is reverse-biased
• In this configuration it is non-conducting and does not interfere
with the circuit
 When voltage increases beyond the design limit, the diode suffers
avalanche breakdown and the harmful voltage is conducted away from the
circuit
 When the voltage spike passes, the diode returns to its normal, non-
conducting mode
 The voltage is “clamped” at a predetermined maximum level which is
called the clamping voltage ( VC ) or breakdown voltage ( VBR )
 Avalanche diodes are the fastest surge-suppression devices; faster than
MOV’s, zener diodes and gas tube surge arresters.

Version01_100407
The Avalanche Process

 Avalanche breakdown is a current multiplication process that occurs in strong

electrical fields
 The electrical field strength necessary to achieve avalanche breakdown varies by
material
 As avalanche breakdown begins, free electrons are accelerated by the electric
field to a very high speed
 Inevitably the electrons strike atoms
• If the speed inadequate, the atom absorbs the electron and the process
stops
• If the speed is sufficient, an electron is knocked off the atom
• Both electrons are then accelerated and impact other atoms, knocking off
additional electrons
• The number of free electrons in the process increase exponentially in a
matter of picoseconds
• When all electrons reach the anode, the process stops

Version01_100407
 How a Silicon Avalanche Diode Works

Voltage Clamped
Transient Transient

Silicon
Current Protected
Avalanche
Transient Load
Diode

-
Ground
6

Version01_100407
Clamping Diagram A

Voltage

Transient ESD

Circuit Damage Level

Suppressor Clamp Level

Normal Circuit Level

Time

Version01_100407
Clamping Diagram B

Voltage
Energy Dissipated

Transient ESD

Circuit Damage Level

Suppressor Clamp Level

Normal Circuit Level

Time

Version01_100407
How Do They Work?

 Device is used in reversed breakdown direction

 Devices turns on while transient voltage exceeds VBR
(Reverse Breakdown Voltage)
 Devices remains in off-state while the transient voltage is
below VBR
 VBR > Normal operation voltage of VRWM on the line – circuit
function is not interrupted
 VC maximum clamping voltage @ IPP
 IPP maximum peak pulse current
 VC x IPP = Device peak pulse power handler capability

Version01_100407
 Characteristics of TVS Diodes

Ipp Ipp = peak pulse current

Ir = leakage current @ Vr
It = test current

It Vf = max forward voltage*

Ir Vr = max working voltage (Vs )

V Axis Vbr = breakdown voltage @ It

Vr Vbr Vc
Vc = max clamp voltage @ Ipp

* Vf applies only to
uni-directional
diodes
Vf
10

I Axis
Version01_100407
Transient Threats

11

Version01_100407
What Are Transients?

 Voltage transients are short duration surges of electrical energy

 They result from the sudden release of energy previously stored or induced by
other means such as lightning or heavy inductive loads
 This energy can be released in two ways:
• In a predictable, repeatable manner via controlled switching actions or,
• In a random manner induced by sources external to the circuit
 Predictable, repeatable transients are typically caused by:
• the operation of motors and generators or,
• the switching of reactive components
 Random transients are often caused by :
• Lightning strikes
• Electrostatic Discharge (ESD)

12

Version01_100407
Transient Sources & Magnitudes

Transient Voltage Current Rise-Time Duration

Lightning 25kV 20kA 10s 1ms

Load Switching 600V 500A 50s 500ms

EMP 1kV 10A 20ns 1ms

ESD 15kV 30A <1ns 100ns

13

Version01_100407
Why are Transients of Concern?

 Component miniaturization has resulted in increased sensitivity to electrical stress

 Microprocessors have structures and conductive paths which cannot handle high
currents from ESD transients
 They operate at very low circuit voltages
 Transient voltages must be controlled to prevent device interruption or failure
 Sensitive microprocessors are prevalent in a wide range of devices
such as:
• Home appliances
• Industrial controls
• Consumer electronics
• Data processing equipment
• Telecommunications
• Automotive electronic systems
• Toys

14

Version01_100407
Lightning Induced Transients

 Transients induced by lightning are not the result of a direct strikes

 A lightning strike creates a magnetic field which can induce large

magnitude voltage transients in nearby electric cables

 A cloud-to-cloud strike effects both overhead and underground cables

• A lightning strike 1 mile away can generate a 70 volt transient

in electric cables

 A cloud-to-ground strike generates even greater voltage transients

15

Version01_100407
Cloud to Cloud Lightning

Magnetic Field Crossing Copper Wires

Induces Current to Flow

Overhead Line

Buried Line
Transient Generated:
70 Volts at 1 mile
10 KV at 160 yards
16

Version01_100407
Cloud to Ground Lightning

17

Version01_100407
Typical Lightning Transient

A: The high-current pulse. It is a direct current

transient that has been recorded to reach up
200 to 260,000 amps and last for a duration of up
to 200 microseconds.

B: Transition phase on the order of several

IP (kA) thousand amps

C: Continuing current of approximately 300-500

amps that lasts up to 0.75 sec

200 0.75x106
Time (s)
18

Version01_100407
Inductive Load Switching

 Switching inductive loads generates high energy transients

 When an inductive load is switched off, the collapsing magnetic field is
converted into electrical energy
• The transient takes the form of a double exponential transient
• The heavier the inductive load, the bigger the transient
 These transients can be as large as hundreds of volts and hundreds of amps
with a duration up to 400 milliseconds
 Because the sizes of the loads vary according to the application, the wave
shape, duration, peak current and peak voltage are all variables which exist in
real world transients are as follows:
• Wave shape
• Duration
• Peak current
• Peak voltage
 All these parameter must be approximated before a suitable suppressor
technology can be selected

19

Version01_100407
Sources of Inductive Transients

 Typical sources of inductive transients include:

• Generators

• Relays

• Motors

• Transformers

20

Version01_100407
Inductive Load Transient*

VS = 25V to 125V

VB = 14V

T = 40ms to 400ms

T1 = 5ms to 10ms

R = 0.5 to 4

*Result of stored energy within an automotive alternator

21

Version01_100407
Electro Static Discharge (ESD)
Transients

 ESD transients can be generated by a build up of negative charges in

human beings that get too close to the equipment and switching
transients
 ESD transients can generate tens of thousands of volts for an extremely
short duration (less than 100 nano seconds or approximately 1 billionth
of a second)
 Due to this short duration, the energy contained in an ESD transient
tends to be very small

22

Version01_100407
ESD or “Static Discharge” Waveform

Current
(Amps) Tens of thousands of volts
100% for billionths of a second
90%

I30

I60

0 0.85 ns 30 60
Time (nano seconds) 23

Version01_100407
Examples of ESD Transients

 Walking across a carpet:

 35kV @ RH = 20%; 1.5kV @ RH = 65%
 Walking across a vinyl floor:
 12kV @ RH = 20%; 250V @ RH = 65%
 Worker at a bench:
 6kV @ RH = 20%; 100V @ RH = 65%
 Vinyl envelopes
 7kV @ RH = 20%; 600V @ RH = 65%
 Poly bag picked up from a desk:
 20kV @ RH = 20%; 1.2kV @ RH = 65%

24

Version01_100407
Silicon Avalanche Diodes
Applications

25

Version01_100407
Silicon Avalanche Diode Applications

 Silicon Avalanche Diodes are designed to limit voltage spikes induced by

lightning, inductive load switching or electrostatic discharge
 Silicon Avalanche Diodes are used where a damaging transient can be
generated:
• Inductive switching, motors, relay bounce
 Silicon Avalanche Diodes are used where a damaging transient can be received:
• Any port exposed to lightning and/or ESD
• Auto sub-system electronic modules
 Silicon Avalanche Diodes are used where AC power is rectified to create DC
power
• Battery chargers, power modules, industrial controls, consumer
electronics

26

Version01_100407
General TVS Applications

Examples Product

Bank ATM Power supply 1.5KE51A

Remote Utility Meter SMBJ24CA

UPS 1.5KE22CA / SMBJ22CA

Active Power Factor Ballast P6KE220A

Fluorescent Ballast P6KE300A

Dimmable Electronic Ballast P6KE440

Washing Machine 1.5KE400C

Flow Meter SA24A

TVSS AK10-380

Motors SMBJ / SMCJ / P6KE / 1.5KE

27

Version01_100407
TVS Computing Applications

Examples Product

Hard disk drive SMAJ 5.0A

Lap top PC SMBJ 6.0A

Laser printer SMBJ 24 CA

Graphic card SMBJ 12 A

Modem card P6KE 120 CA

Motherboard P6KE 400A

28

Version01_100407
TVS Telecom Applications

Examples Product

ISDN line card SMBJ 170CA

Cell phone auto charger SMBJ 17CA

Multiplexers P6KE180A & SMBJ 12CA

911 emergency system 1.5KE 20C

Modem 1.5KE 62A

29

Version01_100407
Automotive TVS Applications

Examples Product

ABS system 5KP 30A

Air Con Module SLD 24

Audio & Navigation Unit 5KP30 & P6SMBJ

HID Unit SMBJ27A

Seat Control Unit 1KSMBJ160A

Door Lock Unit SMBJ30A

Power Sunroof Unit P6KE30A

Air Bag Module P6KE30A

30

Version01_100407
Typical TVS Applications

D.C. Supply Protection D.C. Load Protection

EMI Limiting A.C. Supply Protection

Single Line
Relay and Contactor Transient Limiting 31

Version01_100407
Typical TVS Applications

OP Amplifier Microprocessor Data Bus

Input Lines of Microprocessor System 32

Version01_100407
The End

33

Version01_100407