Scribd
Upload
32 views

Petros

This document contains MATLAB code that analyzes capacitance-voltage (C-V) data from an MOS capacitor. It imports the C-V data, splits it into forward and backward sweeps, and calculates key parameters such as accumulation capacitance, oxide thickness, inversion capacitance, maximum depletion width, doping concentration, flatband voltage, midgap voltage, and various charge densities. These parameters provide information about the quality and characteristics of the MOS capacitor.

Uploaded by

ratan3838
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
32 views

Petros

This document contains MATLAB code that analyzes capacitance-voltage (C-V) data from an MOS capacitor. It imports the C-V data, splits it into forward and backward sweeps, and calculates key parameters such as accumulation capacitance, oxide thickness, inversion capacitance, maximum depletion width, doping concentration, flatband voltage, midgap voltage, and various charge densities. These parameters provide information about the quality and characteristics of the MOS capacitor.

Uploaded by

ratan3838
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
You are on page 1/ 2

% [filename, pathname, filterindex] = uigetfile('*.

csv', 'Pick an data file')


% cd(pathname)
% fid=fopen(filename,'r')
% data_import=textscan(fid,'%s %f %f %f %f');
% data=[data_import{1,2} data_import{1,4} data_import{1,5}];
voltage = data(:,1);
cp= data(:,3);
len = length(voltage);
l=len/2;
for i =1:1:len
cs(i) = cp(i);
end
% splitting the data , to get forward and backward curves
voltage_forward(1:len/2)=voltage(1:len/2);
voltage_backward(1:len/2)=voltage(len/2+1:len);
cs_forward(1:len/2) = cs(1:len/2);
cs_backward(1:len/2)= cs(len/2+1:len);
% % reversing the voltage , to get data for gate voltage (we were applying
% % voltage to the substrate)
% for i = 0: len/2 -1
% voltage_forward(i+1) = - voltage_forward(i+1) ;
% voltage_backward(i+1) = - voltage_backward(i+1);
% end
% plot capacitance per unit area
area = 1e-2; % in cm2-converted from mm2
cs_forward = cs_forward /area ;
cs_backward = cs_backward /area ;
i=1:1:len/2;
plot(voltage_forward ,cs_forward ,'g',voltage_backward,cs_backward,'m')
grid on
% calculate accumulation capacitance in farads
cox_accumulation1= max(cs_forward);
cox_accumulation2= max(cs_backward);
cox_accumulation = 1/2 *( cox_accumulation1 + cox_accumulation2)
% calculate thickness of oxide
epsilon_sio2 = 3.5;
epsilon_air = 8.85e-14;
epsilon_silicon=11.8
thickness_oxide = 1e7* epsilon_sio2 * epsilon_air / cox_accumulation % in nm
% calculate inversion capacitance in farads
c_inversion1= min(cs_forward);
c_inversion2= min(cs_backward);
c_inversion = 1/2*(c_inversion1 + c_inversion2) % in farads
% calculate max depletion width
c_s = (c_inversion)*(cox_accumulation) / ( cox_accumulation - c_inversion) %
in farads
epsilon_si = 11.8 ;
max_depletion_width = (10 ^ (7))* epsilon_si * epsilon_air / c_s; % in nm
max_dep_width_cm = (epsilon_si * epsilon_air )/ c_s
% calculate doping concentration
% Na = 10 ^ 15 ; % initial assumption
% calculate doping concentration
boltzman_constant = 1.38*(10^-23);
temperature = 298; % in Kelvin
intrinsic_concentration = 1.5e10; % in cm -3
charge = 1.6e-19; % in cm-3
vt = 0.0259 ;
Na = 1e15 ; % initial assumption
% bulk_function = vt * log(Na/intrinsic_concentration);
% x0=[1e15;1]; % Make a starting guess at the solution
% options=optimset('Display','iter'); % Option to display output
% [x,fval] = fsolve(@iteration,x0,options) % Call solver
% calculate doping concentration
x0=[1e15 1e17]
options = optimset('Display','iter');
[x,fval,exitflag,output] = fzero(@fun,x0,options)
%calculate debye length
lambda = sqrt ( (vt * epsilon_si * epsilon_air) / (charge * Na ) ) % in cm
% calculate C_FB
C_FlatBand= 1 / (lambda/( epsilon_si * epsilon_air ) + (1/cox_accumulation))
% calculate C_midgap
bulk_function = vt * log (Na / intrinsic_concentration );
dep_width_midgap = sqrt((2 * bulk_function * epsilon_si * epsilon_air) /
(charge * Na))
C_midgap= 1 /((dep_width_midgap/ (epsilon_si * epsilon_air))
+(1/cox_accumulation))
% calculate V_mg
voltage_fit = -2.5:0.01:0;
imax = length(voltage_fit);
voltage_mg1 = interp1(cs_forward , voltage_forward , C_FlatBand);
voltage_mg2 = interp1(cs_backward , voltage_backward , C_FlatBand);
voltage_midgap = (voltage_mg1 + voltage_mg2 )/2
% calculate V_fb
voltage_fit = -2.5:0.01:0;
imax = length(voltage_fit);
voltage_fb1 = interp1(cs_forward , voltage_forward , C_FlatBand);
voltage_fb2 = interp1(cs_backward , voltage_backward , C_FlatBand);
voltage_flatband = (voltage_fb1 + voltage_fb2 )/2
% to calculate the threshold voltage
Voltage_threshold = voltage_flatband + 2 * bulk_function +(charge* Na*
max_dep_width_cm / cox_accumulation )
% to calculate charge defects
work_func_al = 4.08;
work_func_si = 4.05;
work_function = work_func_al - work_func_si ;
charge_defect_combined =(1/1.6)* (10 ^(19))*(-voltage_flatband + work_func_al-
work_func_si )* cox_accumulation
% to calculate generation lifetime of carriers
sigma = 10 ^ (-15); % in cm2
thermal_velocity = 10 ^ 7 ;% in cm_sec-1
tow_g = (10 ^ 6 )*(1 / (sigma * thermal_velocity * charge_defect_combined ))
% to caluclate generation current , Jgen
Jgen = (10^6)*(charge * max_dep_width_cm * intrinsic_concentration / tow_g)
% to calulate fixed charge density
Qf = (cox_accumulation /charge)*(-voltage_midgap + work_function +
bulk_function +(charge*Na *dep_width_midgap / cox_accumulation))
% to calculate interface charge density
Qit = charge_defect_combined - Qf

You might also like