CD40106BMS

December 1992

CMOS Hex Schmitt Triggers

Pinout
CD40106BMS TOP VIEW
A 1 G=A 2 B 3 H=B 4 14 VDD 13 F 12 L = F 11 E 10 K = E 9 D 8 J=D

Features
High Voltage Type (20V Rating) Schmitt Trigger Action with No External Components Hysteresis Voltage (Typ.) - 0.9V at VDD = 5V - 2.3V at VDD = 10V - 3.5V at VDD = 15V Noise Immunity Greater than 50% No Limit on Input Rise and Fall Times Low VDD to VSS Current During Slow Input Ramp 100% Tested for Quiescent Current at 20V 5V, 10V and 15V Parametric Ratings Maximum Input Current of 1A at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC Standardized Symmetrical Output Characteristics Meets All Requirements of JEDEC Tentative Standard No. 13B, Standard Specications for Description of B Series CMOS Devices

C 5 I=C 6 VSS 7

Functional Diagram
A 1 2 G=A

H=B

Applications
Wave and Pulse Shapers High Noise Environment Systems Monostable Multivibrators

I=C

J=D

11

10

K=E

Astable Multivibrators

Description
CD40106BMS consists of six Schmitt trigger circuits. Each circuit functions as an inverter with Schmitt trigger action on the input. The trigger switches at different points for positive and negative going signals. The difference between the positive going voltage (VP) and the negative going voltage (VN) is dened as hysteresis voltage (VH) (see Figure 17). The CD40106BMS is supplied in these 14 lead outline packages: Braze Seal DIP Frit Seal DIP Ceramic Flatpack H4Q H1B H3W *

13

12

L=F

Logic Diagram
A 1 (3, 5, 9, 11, 13)

G 2 (4, 6, 8, 10, 12) VDD

ALL INPUTS ARE PROTECTED BY CMOS PROTECTION NETWORK

VSS

FIGURE 1. 1 OF 6 SCHMITT TRIGGERS

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999

File Number

3354

7-1327

Specications CD40106BMS
Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 1/32 Inch (1.59mm 0.79mm) from case for 10s Maximum

Reliability Information
Thermal Resistance . . . . . . . . . . . . . . . . ja jc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W Maximum Package Power Dissipation (PD) at +125oC For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K). . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2 VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20 3 1 2 VDD = 18V Input Leakage Current IIH VIN = VDD or GND VDD = 20 3 1 2 VDD = 18V Output Voltage Output Voltage Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) N Threshold Voltage P Threshold Voltage Functional VOL15 VOH15 IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VNTH VPTH F VDD = 15V, No Load VDD = 15V, No Load (Note 2) VDD = 5V, VOUT = 0.4V VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V VDD = 5V, VOUT = 2.5V VDD = 10V, VOUT = 9.5V VDD = 15V, VOUT = 13.5V VDD = 10V, ISS = -10A VSS = 0V, IDD = 10A VDD = 2.8V, VIN = VDD or GND VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Positive Trigger Threshold Voltage (See Figure 17) Negative Trigger Threshold Voltage (See Figure 17) Hysteresis Voltage (See Figure 17) VP5 VP10 VP15 VN5 VN10 VN15 VH5 VH10 VH15 VDD = 5V VDD = 10V VDD = 15V VDD = 5V VDD = 10V VDD = 15V VDD = 5V VDD = 10V VDD = 15V 3 1, 2, 3 1, 2, 3 1 1 1 1 1 1 1 1 1 7 7 8A 8B 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 +25oC, +25oC, +25oC, +25oC, +25oC, +25oC, +25oC, LIMITS TEMPERATURE +25oC +125oC -55oC +25oC +125oC -55oC +25oC +125oC -55oC +125oC, +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +125oC -55oC +125oC, -55oC +125oC, +125oC, +125oC, +125oC, +125oC, -55oC -55oC -55oC -55oC -55oC 2.2 4.6 6.8 0.9 2.5 4 0.3 1.2 1.6 3.6 7.1 10.8 2.8 5.2 7.4 1.6 3.4 5.0 V V V V V V V V V -55oC MIN -100 -1000 -100 MAX 2 200 2 100 1000 100 50 -0.53 -1.8 -1.4 -3.5 -0.7 2.8 UNITS A A A nA nA nA nA nA nA mV V mA mA mA mA mA mA mA V V V

PARAMETER Supply Current

SYMBOL IDD

CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND

+25oC, +125oC, -55oC 14.95 0.53 1.4 3.5 -2.8 0.7

VOH > VOL < VDD/2 VDD/2

+25oC, +125oC, -55oC +25oC, +125oC, -55oC

+25oC, +125oC, -55oC

NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs.

3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max.

7-1328

Specications CD40106BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS TEMPERATURE 9 10, 11 VDD = 5V, VIN = VDD or GND 9 10, 11 +25oC +125oC, -55oC LIMITS MIN MAX 280 378 200 270 UNITS ns ns ns ns

PARAMETER Propagation Delay

SYMBOL TPHL TPLH TTHL TTLH

CONDITIONS (NOTE 1, 2) VDD = 5V, VIN = VDD or GND

Transition Time

+25oC +125oC, -55oC

NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns 2. -55oC and +125oC limits guaranteed, 100% testing being implemented.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS VDD = 5V, VIN = VDD or GND NOTES 1, 2 TEMPERATURE -55oC, +25oC +125oC VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC MIN 4.95 9.95 0.36 0.64 0.9 1.6 2.4 4.2 MAX 1 30 2 60 2 120 50 50 -0.36 -0.64 -1.15 -2.0 -0.9 -1.6 -2.4 -4.2 140 120 100 80 UNITS A A A A A A mV mV V V mA mA mA mA mA mA mA mA mA mA mA mA mA mA ns ns ns ns

+125oC VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC +125oC Output Voltage Output Voltage Output Voltage Output Voltage Output Current (Sink) VOL VOL VOH VOH IOL5 VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, VOUT = 0.4V 1, 2 1, 2 1, 2 1, 2 1, 2 +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +125oC -55oC Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC -55oC Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC -55oC Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC -55oC Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC -55oC Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC -55oC Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC -55oC Propagation Delay TPHL TPLH TTHL TTLH VDD = 10V VDD = 15V VDD = 10V VDD = 15V 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 +25oC +25oC +25oC +25oC

Transition Time

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Specications CD40106BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Input Capacitance NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K., Input TR, TF < 20ns SYMBOL CIN CONDITIONS Any Input NOTES 1, 2 TEMPERATURE +25oC MIN MAX 7.5 UNITS pF

TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current N Threshold Voltage N Threshold Voltage Delta P Threshold Voltage P Threshold Voltage Delta Functional SYMBOL IDD VNTH VTN VTP VTP F CONDITIONS VDD = 20V, VIN = VDD or GND VDD = 10V, ISS = -10A VDD = 10V, ISS = -10A VSS = 0V, IDD = 10A VSS = 0V, IDD = 10A VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 1, 2, 3, 4 +25oC NOTES 1, 4 1, 4 1, 4 1, 4 1, 4 1 TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC MIN -2.8 0.2 VOH > VDD/2 MAX 7.5 -0.2 1 2.8 1 VOL < VDD/2 1.35 x +25oC Limit UNITS A V V V V V

ns

NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

3. See Table 2 for +25oC limit. 4. Read and Record

TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC PARAMETER Supply Current - MSI-1 Output Current (Sink) Output Current (Source) SYMBOL IDD IOL5 IOH5A 0.2A 20% x Pre-Test Reading 20% x Pre-Test Reading DELTA LIMIT

TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUP Initial Test (Pre Burn-In) Interim Test 1 (Post Burn-In) Interim Test 2 (Post Burn-In) PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test Group A MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 Sample 5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 IDD, IOL5, IOH5A READ AND RECORD IDD, IOL5, IOH5A IDD, IOL5, IOH5A IDD, IOL5, IOH5A

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Specications CD40106BMS
TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUP Group B Subgroup B-5 Subgroup B-6 Group D MIL-STD-883 METHOD Sample 5005 Sample 5005 Sample 5005 GROUP A SUBGROUPS 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3 READ AND RECORD Subgroups 1, 2, 3, 9, 10, 11

NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.

TABLE 7. TOTAL DOSE IRRADIATION MIL-STD-883 METHOD 5005 TEST PRE-IRRAD 1, 7, 9 POST-IRRAD Table 4 READ AND RECORD PRE-IRRAD 1, 9 POST-IRRAD Table 4

CONFORMANCE GROUPS Group E Subgroup 2

TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION Static Burn-In 1 Note 1 Static Burn-In 2 Note 1 Dynamic BurnIn Note 1 Irradiation Note 2 NOTES: 1. Each pin except VDD and GND will have a series resistor of 10K 5%, VDD = 18V 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V 0.5V OPEN 2, 4, 6, 8, 10, 12 2, 4, 6, 8, 10, 12 2, 4, 6, 8, 10, 12 GROUND 1, 3, 5, 7, 9, 11, 13 7 7 7 VDD 14 1, 3, 5, 9, 11, 13, 14 14 1, 3, 5, 9, 11, 13, 14 2, 4, 6, 8, 10, 12 1, 3, 5, 9, 11, 13 9V -0.5V 50kHz 25kHz

Typical Performance Characteristics

OUTPUT LOW (SINK) CURRENT (IOL) (mA) OUTPUT LOW (SINK) CURRENT (IOL) (mA) AMBIENT TEMPERATURE (TA) = +25oC AMBIENT TEMPERATURE (TA) = +25oC

30 25 20 15 10 5

GATE-TO-SOURCE VOLTAGE (VGS) = 15V

15.0 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 12.5 10.0 7.5 5.0 2.5 10V

10V

5V 0 5 10 15

5V 0 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V)

DRAIN-TO-SOURCE VOLTAGE (VDS) (V)

FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS

FIGURE 3. MINIMUM OUTPUT LOW (SINK) CURRENT CHARACTERISTICS

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Specications CD40106BMS Typical Performance Characteristics

DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V

(Continued)

0 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) -5 -10 -15

DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V

0 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)

-5

-10V

-20 -25

-10V

-10

-15V

-30

-15V

-15

FIGURE 4. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS

AMBIENT TEMPERATURE (TA) = +25oC SUPPLY VOLTAGE (VDD) = 15V 15.0 OUTPUT VOLTAGE (VO) (V) 12.5 10.0 7.5 5.0 2.5 0 0 CURRENT PEAK 10V CURRENT PEAK 5V 1 VDD DRAIN CURRENT (ID) (mA) 1.5

FIGURE 5. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS

SUPPLY VOLTAGE (VDD) = 15V 15 OUTPUT VOLTAGE (VO) (V) VDD

VIN

VO

1.0

10

10V VIN

VO

VO ID

ALL ID OTHER INPUTS TO VDD OR VSS

-55oC 5 5V +125oC

0.5

ALL OTHER INPUTS TO VDD OR VSS

2.5

5.0

7.5

10.0

12.5

15.0

10 INPUT VOLTAGE (VI) (V)

15

INPUT VOLTAGE (VI) (V)

FIGURE 6. TYPICAL CURRENT AND VOLTAGE TRANSFER CHARACTERISTICS

200 PROPAGATION TIME (tPHL, tPLH) (ns)

FIGURE 7. TYPICAL VOLTAGE TRANSFER CHARACTERISTICS AS A FUNCTION OF TEMPERATURE

150

SUPPLY VOLTAGE (VDD) = 5V

TRANSITION TIME (tTHL, tTLH) (ns)

AMBIENT TEMPERATURE (TA) = +25oC

AMBIENT TEMPERATURE (TA) = +25oC

200 SUPPLY VOLTAGE (VDD) = 5V

100 10V 5V

150

100 10V 50 15V

50

0 0

20 40 60 80 LOAD CAPACITANCE (CL) (pF)

100

0 0

20

40 60 80 100 LOAD CAPACITANCE (CL) (pF)

FIGURE 8. TYPICAL PROPAGATION DELAY TIME AS A FUNCTION OF LOAD CAPACITANCE

FIGURE 9. TYPICAL TRANSITION TIME AS A FUNCTION OF LOAD CAPACITANCE

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CD40106BMS Typical Performance Characteristics

POWER DISSIPATION PER TRIGGER (PD) (W) 105 8
6 4 2

(Continued)

AMBIENT TEMPERATURE (TA) = +25oC

TRIGGER THRESHOLD VOLTAGE (VP, VN) (V)

104 8
6 4 2

AMBIENT TEMPERATURE (TA) = +25oC INPUT ON TERMINALS 1, 5, 8, 12 OR 2, 6, 9, 13; OTHER INPUTS TIED TO VDD 15

SUPPLY VOLTAGE (VDD) = 15V 5V 10V

103 8
6 4 2

VP 10 VN 5

102

8 6 4 2

CL = 50pF CL = 15pF
2 4 68 2 4 68 2 4 68 2 4 68 2 4 68

10 10-1

10 102 103 INPUT FREQUENCY (f) (kHz)

104

10 15 20 SUPPLY VOLTAGE (VDD) (V)

FIGURE 10. TYPICAL POWER DISSIPATION PER TRIGGER AS A FUNCTION OF INPUT FREQUENCY

FIGURE 11. TYPICAL TRIGGER THRESHOLD VOLTAGE AS A FUNCTION OF SUPPLY VOLTAGE

104 8

VH X 100 PERCENT VDD

AMBIENT TEMPERATURE (TA) = +25oC POWER DISSIPATION (PD) (W)

25 20 15 10 5 0

103 8 SUPPLY VOLTAGE (VDD) = 15pF 6 FREQUENCY (f) = 100kHz

4 2

6 4 2

HYSTERESIS

FIGURE 12. TYPICAL PERCENT HYSTERESIS AS A FUNCTION OF SUPPLY VOLTAGE

Applications
VDD R 1/3 CD4007UB VDD VSS 1/6 CD40106BMS VSS VDD VDD VSS tM = RC n VDD VDD-VP VSS C 1 2 tM VDD 1/6 CD40106BMS VSS

102

8 6 4 2 6 4 2 6 4 2

15V, 10kHz

10 8

15V, 1kHz 10V, 1kHz 5V, 1kHz

18 10-1

AMBIENT TEMPERATURE (TA) = +25oC LOAD CAPACITANCE (CL) = 15pF 10 102 103 RISE AND FALL TIME (tr, tf) (ns)
2 4 68 2 4 68 2 4 68 2 4 68

10

15

20

4 68

0.1

104

SUPPLY VOLTAGE (VDD) (V)

FIGURE 13. TYPICAL POWER DISSIPATION AS A FUNCTION OF RISE AND FALL TIMES

FREQUENCY RANGE OF WAVE SHAPE IS FROM DC TO 1MHz

50k R 1M 100pF C 1F FOR THE RANGE OF R AND C GIVEN 5s < tM < 1s

FIGURE 14. WAVE SHAPER

FIGURE 15. MONOSTABLE MULTIVIBRATOR

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CD40106BMS Applications
(Continued)

tA VDD 1/6 CD40106BMS VSS VP VN VDD-VN VDD-VP

tA = RC n R C VSS

50k R 1M 100pF C 1F FOR THE RANGE OF R AND C GIVEN 2s < tA < 0.4s

FIGURE 16. ASTABLE MULTIVIBRATOR

VP VDD VIN VSS VDD VO VSS (a) DEFINITION OF VP, VN, VH (b) TRANSFER CHARACTERISTIC OF 1 OF 6 GATES VN VP VH VO VH VH = VP - VN VIN VIN VO VN

FIGURE 17. HYSTERESIS DEFINITION, CHARACTERISTICS, AND TEST SETUP

OUTPUT CHARACTERISTIC VDD LOGIC 1 OUTPUT REGION VP VOH LOGIC 0 OUTPUT REGION VOL VSS VN

INPUT CHARACTERISTIC

LOGIC 1 INPUT REGION

VOH VOL

LOGIC 0 INPUT REGION

DRIVER

LOAD

FIGURE 18. INPUT AND OUTPUT CHARACTERISTICS

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CD40106BMS Chip Dimensions and Pad Layout

Dimensions in parenthesis are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch).

METALLIZATION: PASSIVATION:

Thickness: 11k 14k,

AL.

10.4k - 15.6k, Silane

BOND PADS: 0.004 inches X 0.004 inches MIN DIE THICKNESS: 0.0198 inches - 0.0218 inches

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certication.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

Sales Ofce Headquarters

NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029

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