Fast Recovery Diode For IGBT: Outline Drawings Equivalent Circuit
This document provides specifications for a fast recovery diode for IGBTs, including:
1. Maximum ratings such as a repetitive reverse voltage of 600V, repetitive peak surge current of 5A, and operating temperature range of -40 to +150°C.
2. Electrical characteristics including a maximum reverse current of 1.0mA, forward voltage of 3.0V, and reverse recovery time of 0.3μs.
3. Thermal resistance characteristic of a maximum junction to case thermal resistance of 5.0°C/W.
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Fast Recovery Diode For IGBT: Outline Drawings Equivalent Circuit
This document provides specifications for a fast recovery diode for IGBTs, including:
1. Maximum ratings such as a repetitive reverse voltage of 600V, repetitive peak surge current of 5A, and operating temperature range of -40 to +150°C.
2. Electrical characteristics including a maximum reverse current of 1.0mA, forward voltage of 3.0V, and reverse recovery time of 0.3μs.
3. Thermal resistance characteristic of a maximum junction to case thermal resistance of 5.0°C/W.
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Download as PDF, TXT or read online on Scribd
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ERW01-060(5A/600V)
Fast Recovery Diode for IGBT
Outline Drawings
Units mm
Equivalent circuit
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25C) Item Repetitive Reverse Voltage Repetitive peak surge current Average rectiffied forward current Non-repetitive peak surge current Maximam Power Dissipaion Operating Temperature Storage Temperature Mounting Screw Torque Symbol V RRM IFM IF(A) IFSM Po Tj Tstg Test Conditions 20kHz Duty 50% Squ. wave Tc=118C Tc=25C DC Pulse 10ms, sin. wave Ratings 600 5 13 5 40 25 +150 -40 to +150 50 Units V A A A A W C C Ncm
Item Reverse Current Foward voltage Reverse recovery time Symbol IR V FM t rr Test Conditions VR = 600V IF = 5A IF = 5A,VR=200V, di/dt=100A/s Max 1.0 3.0 0.3 Units mA V s
Thermal resistance characteristics
Item Thermal resistance Symbol Rth(j-c) Test Conditions junction to case Max 5.0 Units C/W