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固电半导体 Inchang Semiconductor: Silicon NPN Power Transistors

This document provides product specifications for Inchange Semiconductor's silicon NPN power transistors models 2N5190, 2N5191, and 2N5192. The transistors come in a TO-126 package and are intended for use in medium power linear and switching applications. The document lists maximum ratings, thermal characteristics, electrical characteristics, and package outline dimensions for the transistors.

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Hoàng Long Võ
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24 views

固电半导体 Inchang Semiconductor: Silicon NPN Power Transistors

This document provides product specifications for Inchange Semiconductor's silicon NPN power transistors models 2N5190, 2N5191, and 2N5192. The transistors come in a TO-126 package and are intended for use in medium power linear and switching applications. The document lists maximum ratings, thermal characteristics, electrical characteristics, and package outline dimensions for the transistors.

Uploaded by

Hoàng Long Võ
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N5190 2N5191 2N5192

DESCRIPTION With TO-126 package Complement to type 2N5193/5194/5195 Excellent safe operating area APPLICATIONS For use in medium power linear and switching applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER 2N5190

VCBO

Collector-base voltage

VCEO

Collector-emitter voltage

INC

NG S HA
2N5191 2N5192 2N5190 2N5191 2N5192

Open emitter

CON EMI
CONDITIONS

TOR DUC
VALUE 40 60 80 40 60 80

UNIT

Open base

VEBO IC ICM IB PD Tj Tstg

Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature

Open collector

5 4 7 1

V A A A W

TC=25

40 150 -65~150

THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 3.12 UNIT /W

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors


CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N5190 VCEO(SUS) Collector-emitter sustaining voltage 2N5191 2N5192 VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage 2N5190 ICEO Collector cut-off current 2N5191 2N5192 IC=1.5A ;IB=0.15A IC=4A ;IB=1A IC=1.5A ; VCE=2V VCE=40V; IB=0 VCE=60V; IB=0 VCE=80V; IB=0 VCB=40V; IE=0 VCB=60V; IE=0 VCB=80V; IE=0 IC=0.1A; IB=0 SYMBOL

2N5190 2N5191 2N5192

CONDITIONS

MIN 40 60 80

TYP.

MAX

UNIT

0.6 1.4 1.2

V V V

1.0

mA

ICBO

Collector cut-off current

ICEX IEBO

2N5190 2N5191

2N5192 2N5190 2N5191

Collector cut-off current

Emitter cut-off current

INC

NG S HA
2N5192 2N5190 2N5191 2N5192 2N5190

VCE=40V; VBE(off)=1.5V TC=125 VCE=60V; VBE(off)=1.5V TC=125 VCE=80V; VBE(off)=1.5V TC=125 VEB=5V; IC=0

CON EMI

TOR DUC
0.1 2.0 0.1 2.0 0.1 2.0 1.0

0.1

mA

mA

mA

25 hFE-1 DC current gain IC=1.5A ; VCE=2V 20

100

80

10 hFE-2 DC current gain 2N5191 2N5192 fT Transition frequency IC=1A ; VCE=10V;f=1MHz IC=4A ; VCE=2V 7 2 MHz

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors


PACKAGE OUTLINE

2N5190 2N5191 2N5192

NG S HA

INC

CON EMI

TOR DUC

Fig.2 Outline dimensions

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