_TECCOR

ELECTRONICS

INC

73

DE18872819

0001038

4 __

881281~ TECCOR ELECTRONICS JNC

13C 01038

..-.

-r-os -() I

TO-3 BASE FASTPAKlM Plastic TO-92

--_-_
'--

1801 HURD DRIVE IRVING, TEXAS 75038-4385 PHONE 214/580-1515 TWX 910-860-5068 TELEX 79-1600

"

,
-;_

\
,
<~

"

'

fTHERMOTAB% TO-220AB

TO-202AB

TO-218X

seR's 1·70 AMPS

NON-SENSITIVE GATE
General Information
The Teccor Electronics line of thyristor SCR semiconductors are half-wave unidirectional gate-controlled rectifiers which complement Teccor's line of sensitive gate SCR's. Teccor offers devices with current ratings from 1-70 Amps and Voltage ratings from 30-600 Volts with gate sensitivities from 10-50 milliamps. If gate currents in the 1-500 microamp ranges are required, please consult Teccor's sensitive gate SCR technical data sheets. the use of low cost assembly packaging techniques. and convenient

The Teccor line of SCR's features glass passivated device junctions to insure long term device reliability and parameter stability. Teccor's glass offers a rugged, reliable barrier against junction contamination.

Features Electrically Isolated Packages

Teccor's SCR's are available in a choice of 8 different device packages. Four of the 8 packages are offered in electrically isolated construction where the case or tab is internally isolated to allow

• • • •

Electrically Isolated Packages High Voltage Capability - 30-600 Volts High Surge Capability - up to 950 Amps Glass Passivated Chip

45

rECCOR

ELECTRONICS

INC

..

--

73

DE 188-t2819

0001039

=:iCH'S-Non SenSlllve Gate

Part Number·
.

bT
...

-r-~5 .... 01
VTM
Peak On·State Voltage at Max Rated RMS Current TC = 25'C [3)

"

TYPE

,I it fl.' I, i
LJA 'A A A
G

Isolated

Non-Isolated

tr
Maximum On·State Current [1) [2)

VqRM&
RRM
Repetitive Peek Of~State Forward & Reverse Voltage

IGt"'·: . fORM & tRRM

.

VOT
DC Gate·Trigger Voltage Va = 12 VOC RL = 60n [8) [13)

DC Gate·Trigger Current VD = 12 VDe RL = 60n [4) [12)

Peak Off·State Forward & Reverse Current(1f VORM & VRRM

Amps IT(RMS) IT(AV) MAX

1.0

rnA Volts MIN rnA MIN MAX 1 1 1

1

Valls TC = 1250C Volts MAX 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 1.6 1.6
1.6

TO·92

TO·220AB

TO·202AB

TO·202AB

NON·ISOlATED TO·220AB

Tc = 250C

TC = 1000C

TC = 250C MAX 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5
1.5

TC = 1250C MIN 0.2 . 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0,2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2

FORDIMENSIONAL OUTUNES PACKAGE & VARIATIONS SEEPAGE 67 S031E S051E S101E S201E S401E S601E S0301l S0501l S1001l S2001l S4001l S600ll S0303l S0503l S1003l S2003l S4003l S6003l S0304F1 S0504F1 S1004F1 S2004F1 S4004F1 S6004F1 S0306F1 S0506F1 S1006F1 S2006F1 S4006F1 S6006F1 S0308F1 S0508F1 S100BF1 S2006F1 S400BF1 S600BF1 S0304N1 S0504N1 S1004N1 S2004N1 S4004N1 S6004N1
-,

MAX 0.64 0.64 0.64 0.64 0.64 0.64 1.0 1.0 1.0 1.0 1.0 1.0 1.9 1.9 1.9 1.9 1.9
1.9

MAXIMUM .01 .01 ,01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
0.2

30
50 100 200 400 600 30 50 100 200 400 600 30 50 100 200 400 600 30 50 100 200 400 600 30 ..50 100 200 400 600 30 50 100 200 400 600 50 100 200 300 400 500 600

Amp

1,6 Amps

Amps

, "

Amps
S0306l S0506L S1006l S2006l S4006l S6006l S030Bl S050Bl S100Bl S200Bl S400BL S600Bl

Amps

8 Amps

S030BR S050BR S100BR S200BR S400BR S600BR C122F C122A cmB C122C C122D C122E C122M

1.0 1.0 1.0 1.0 1.0 1.6 1.6 1.6 1.6 1.6 1.6 3.0 3.0 3.0 3.0 3.0 3.0 4.0 4.0 4.0 4.0 4.0 4.0 6.0 6.0 6.0 6.0 6.0 6.0 B.O 8.0 8.0 B.O B.O B.O B.O B.O B.O 8.0 B.O B.O 8.0

1
1

2.5 2.5 2.5 2.5 2.5 2.5 3.8 3.8 3.8 3.8 3.8 3.8 5.1 5.1 5.1 5.1 5.1 5.1 5.1 5.1 5.1 5.1 5.1 5.1 5.1

1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1

10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 15 15 15 15 15 15 15 15 15 15 15 15 25 25 25 25 25 25 25

0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.5 0.5 0.5 0.5 0.5 0.5 0.5

1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.83 1.B3 1.B3 1.83 1.83 1.83 1.B3

1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5

GENERAL NOTES • Teccor's 2N6394 Series. 2N6400 Series. and 2N6504 Series devices conform to all JEDEC registered data. • All measurements are made at 60 Hz with a resistive load at an ambient temperature of + 250C unless otherwise specified. • Operating temperature range (TJ) is - 650C to + 1250C for TO·92 devices. OOCto + 1250C for Fastpak. and - 4QOCto + 1250C for all other packages.

• Storage temperature range (TS) is - 650C to + 15QOCfor TO·92 devices. - 400C to + 15QOC for TO·202 and TO·220 devices. -200C to + 1250C for Fastpak and - 40'C to + 1250C for all others • Lead solder temperature is a maximum of 2300C for 10 seconds maximum: 1/16" trorn case. • The case temperature (TC) is measured as shown on dimensional outline drawings. See "package dimensions" section of catalog.

46

TECCOR ELECTRONICS

INC

73

r-:> T- J.5 -D/ Electrical .Specifications

DE 18872819 0001040 2
-

IH
DC Holding Current Gate Open (5) (14)

IGM
Peak Gate Current (11)

PGM
Peak Gate Power Dissipation (11)

PG(AV)
Average Gate Power Dissipation

- 11SM.
Peak One CycleSurge ForwardCurrent (6) (10)

.. dv/dt
CriticalRate of Applied Forl{~rdVoltage

12t
RMSSurge (Non-Repetiltve) On-State Current For a Period of 8.3 msec for Fusing

di/dt
MaximumRate of Rise of On-State Current IGT = 150mA With 0.1/ls Rise Time Ampslj,s

tgt
Gate Contro:red Turn-OnTime Gate Pulse =100mA M,n. Width= 5/15 With Rise Time s 0.1/15
(7)

tq
CIfCUlt Commutated Turn·Off Time (9) (10l

Amps rnA MAX 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 Amps MAX 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 15 15 0.3 0.3 0.3 0,3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Walls Walls 60Hz MAX 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 100 100 100 100 100 100 100 100 100 100 100 100 90 90 90 90 90 90 90 50Hz MAX 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 60 60 60 60 60 60 60 60 60 60 60 60 82 82 82 82 82 82 82

VOltS/liS

rc

=100o MIN 40 40

e rc = 1250C
MIN 30 30 30 30 20 20 30 30 30 30 20 20 30 30 30 30 20 20 30 30 30 30 20 20 125 125 125 125 125 100 125 125 125 125 125 100

Amps2sec

I'S

I'S

MAX

MAX 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35

15
15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 20 20 20 20 20 20 20 20 20 20 20 20 5 5 5 5 5 5 5

40
40 30 30 40 40 40 40 30 30 40 40 40 40 30 30 40 40 40 40 30 30 175 175

175
175 175 150 175 175 175 175 175 150

3.7 3.7 3.7 3.7 3.7 3.7 3.7 3.7 3.7 3.7 3.7 3.7 3.7 3.7 3.7 3.7 3.7 3.7 3.7 3.7 3.7 3.7 3.7 3.7 41 41 41 41 41 41 41 41 41 41 41 41 34 34 34 34 34 34 34

50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 100 100 100 100 100 100 100 100 100 100 100 100 100 100 ~OO. 100 100 100 100

2.0 2.0 2.0 2.0 2.0 2.0 2.0 2,0 2.0 2.0 2.0 2.0 2.0 2,0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0

NOTES TO ELECTRICAL SPECIFICATIONS (1) (2) (3) (4) (5) (6) (7) (8) See See See See See For See See Rgures 2 and 3 for current rating at specified operating case temperature. Figure 1 for free air current rating. Figure 6 for instantaneous on-state current vs on-state voltage (typical). Figure 5 for IGT vs Te. Figure 4 for IH vs rc. more than one full cycle rating. see Figure 9. Figure 8 for tgt vs IGT. Figure 7 for VGT vs Te.

(9) Test conditions are as follows: iT = 1 amp for :5 1.6 amp devices and 2 amp for ;;,. 3 amp devices. Pulse duration = 50I,sec. dv/dt = 20 VI/,s. di/dt = -10 ampsh,s for :5 1 6 amp devices. and -30 arnps/re for;;,. 3 amp devices IGT = 200 mA @ fum-on (10) See Figure 2 (A.B.C.O.E) for maximum allowable case temperatures 1f maximum rated current. (11) Pulse v~dth :5 31's. (12) IGT = 40 mA maximum @ - 400C for C122 devices (13) VGT = 2.0 V maximum @ -40oC for C122 devices. (14) Initial on-state current = 200 mA (DC) for 1 to 20 amp devices 400 mA (DC) for 25 to 70 amp del>ices.

47

TECCOR

ELECTRONICS---INC'

-- ---- - -

-73--·- DE 18872819 - 000-1"041 4

';

r_)
._
-

-r_ .:25 ....OJ

VTM
Peak On-State Voltage at Max Rated RMS Current tc = 25QC (3)

SCR's-Non Sensitive Gate

,"
,
.'

~art Number·

TYPE

i ,,, i:
Isolated
A A

..

-'

Non-Isolated
'A

.~'·JT.~·- VDRM & .;JaT . - 'VRRM"'

-'

-.'

• _'

• -=.,g:-_;

ID8M &·IRRM
..
,~-

VaT
DC Gate·Tngger Voltage VD = 12 VDC RL = 60r!
(8)

~.
~
A

Maximum On-State Current (1)

Repetitive Peak Off·State Forward & Reverse Voltage

DC Gate-Trigger Current Va = 12 VOC RL = 60r!

(4)

Peak Off-State Forward & Reverse Current @ VDRM & VRRM

Amps IT(RMS) IT(AV) MAX 10 10 10 10 10 10 10 10 10 MAX 6.4 6.4 6.4 6.4 6.4 6.4 6.4 6.4 6.4 6.4 6.4 6.4 6.4 7.6 7.6 7.6 7.6 7.6 7.6 7.6 7.6 7.6 7.6 7.6 9.5 9.5 9.5 9.5 9.5 9.5 10 10 10 10 10 10 10 10 10 10 10 13 13 13 Volts MIN . 30 rnA MIN 1 1 1 Te = 250e

rnA Te = 1000e MAXIMUM .D1 .01 .01 .01 .D1 .01 0.2 0.2 0.2 0.2 0.2 0.2 2.0 2.D 2.D 2.0 2.0 2.0 2.0 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Te = moe Volts MAX 1.6 1.6 1.6 1.6 1.6 1.6 2.0' 2.D' 2:0'

Volts Te = 250e MAX 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 Te = moe MIN 0.2 0.2 0.2 0.2 0.2 0.2

TO·220AB

TO·WAB

NON·ISOLATEO TO·22MB

FORDIMENSIONAL OUTLINES PACKAGE ARIATIONS & V SEEPAGE67 S0310L S0510L S1010L S2010L 84010L S6010L S0310F1 S0510F1 S1010F1 82010F1 S4010F1 S6010F1 82800F . S2800A 8280D8 S2800C 828000 S2800E S2800M S0312R S0512R S1012R S2012R S4012R S6012R 2N6394 2N6395 2N6396 2N6397 2N6398

MAX
15 15 15 15 15 15 15 15 15 15 15 15 15 20 20 20 20 20 20 30 30 30 30 30

50
100 200 400 600 50 100 200 300 400 500 600 30 50 100 200 400 600 50 100 200 400 600 30 50 100 200 400 600 30 50 100 200 400 600 50 100 200 400 600 30 100 200 400 600

1
1 1

Amps

10

10
10 10 . 10 12 12 12 12 12 12 12 12 12 12 12 16 15 -15 15 15 15 16 16 16 16 16 16 16 16 16 16 16 20 20 20 20 20 20

2.0'
2.0' 2.0' 2.0' 1.6 1.6 1.6 1.6 1.6 1.6 2.2 2.2 2.2 2.2 2.2 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.7 1.7. 1.7 1.7 1.7 1.6 1.6 1.6 1.6 1.6 1.6

Amps

12

S0312L S0512L S1012L S2012L S4012L S6012L

1 1 1 1 1 1

Amps

15

S0315L S0515L S1015L S2015l S4015L S6015L S0316R S0516R S1016R S2016R S4016R S6016R 2N6400 2N6401 2N6402 2N6403 2N6404 S0320L S0529L S1D20L S2020L S4020L 86020L

1
1 1 1

~ ~

30

~O aD
30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30

1
1 1 1 1 1 1

Amps

16

Amps

20

50

13

13 13

1 1

.01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .D1 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01

D.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5

0.5 0.5 0.5 0.5 0.5 0.5

1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 2.0 2.0 2.0 1.0 1.D 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 2.0 2.0 2.0 1.0 1.0 1.0 1.0 1.0 1.0

1.5
1.5 1.5 1.5 1.5 1.5

0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2

'VTM @; IT = 30Apk GENERAL NOTES • Teccor's 2N6394 Series. 2N6400 Series. and 2N6504 Series devices conform to all JEDEC registered data. • All measurements are made at 60 Hz with a resistive load at an ambient temperature of + 250e unless otherwise specified. • Operating temperature range (TJ) is - 650C to + 1250C for TO-92 devices, ooC to + 1250C for Fastpak. and - 400C to + 1250C for all other packages. • Storage temperature range (TS) is - 650C to + 15QOCfor TO·92 devices. - 400C to + 150°C for TO-202 and TO-220 devices. -20°C to + 1250C for Fastpaks and -400C to + 125°C for all others. • Lead solder temperature is a maximum of 2300(; for 10 seconds maximum; 1/16" from case. • The case temperature (TC) is measured as shown on dimensional outline drawings. See "package dimensions" section of catalog.

NOTES FOR JEDEC DEVICES 1. 2I1J6400-6405 series of devices also conform to the follovnng specncauons a MaXimum VGT = 2.5 volts @ - 4QoC b. Maximum IH ~ 60 milliamps @ -400C 2. 2N6504-650B a. Maximum b. Maximum c. Maximum series of devices also conform to the follo~,ing specrhcatmns VGT = 1.5 volts @; - 40°C IGT = 75 milliamps @ - 40°C IH = 40 milliamps @ - 40°C

48

73

DE18872819

0001042

T-cW - 0/ lot
Gate Controlled Turn-OnTime Gate Pulse = l00mA Mm. ;'l1dth = 51'S With fllse Time s: 0.11'5
(7)

. Electrical Specifications
·

·~.)K_:.
<

; IGM·. . ..
Peak Gate Current (11)

';

PGM ..
Peak Gate Power Dissipation (11)

PG(AV)
Average GatePower DISSipation

iTSM
PeakOne Cycle Surge ForwardCurrent (6) (10)

__ -

. dv/dt
Critical Rate of Apphed Forward Voltage

4'.

-12t

di/dt
Maximum Rate of Change of On-State Current IGT = 150mA With 0.11'5 Rise Time

tq
Circuit Commutated Turn-Off Ti11lJ (9) (10)

DC Holding Current GateOpen (5) (14)

RMS Surge (Non·Repetitive) On·StateCurrent For a Period of 8.3 msec for Fusing

Amps mA Amps Watts Watts 60Hz 50Hz

Volts/Jls

Te = 1000e Te = 1250e MIN

175 175 175 175 175 150 100 75 50 40

Amps2sec

Amps/Jls

JlS

liS

r l

MAX
30 30

MAX
2.0 2.0
2.0 2.0 2.0· 2.0

MAX
83
83 83 83

MIN
125 125 125 125 125 100 41 41 41 41 41 41 40 40 40 40 40 40 40 60 60 60 60 60 60 40 40 40 40 40 210 210 210 210 210 210 210 210 210 210 210 210 100 100 100 100 100 374 374 374 374 374 374 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125

MAX
2.0 2.0 2.0 2.0 2.0 2.0 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0

MAX
35 35 35 35 35 35 35 35 35

·.

20
20 20 20 20 20

30
30 30
30 20

20 20
"

20 20 20 20 40 40 40

20 20 20 20

20

20
2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 3.03.0 3D 3.0 3.0 20 20 20 20 20 20 20 20 20 20 20 20

40 40 40
40 40 40

l.

40 40 40 40
40 40

30
30

30
30 30 30 30 30 30 30 30 30 20 20 20 20 20

_0.6
0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.6 0.6 0.6

0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6

40 40 40 40 40
40 40

S.O
3.0 3.0 3.0 3.0 3.0 3.0 2.0 2.0 2.0 2.0 2.0 30 3.0

40 40 40 40
40 40 40 40 40

3.0
3.0 3.0 3.0
SPECIFICATIONS

30 30
-~

40 40
40
NOTES TO ELECTRICAL (1) (2) (3) (4) (5) (6) (7) (8)

30 30
30

100 100 100 100 100 100 100 100 100 100 100 100 100 120 120 120 120 120 120 100 100 100 100 100 225 225 225 225 225 225 225 225 225 225 225 225 160 160 160 160 160 300 300 300 300 300

83
83 85 85 85 85 85 85

30
25 20 175 175 175 175 175 150 125 125 125 125 125 100

35 35
35 35 35 35 35 35 35 35

85
100 100 100 100 100 100

188 188 188 188 188 188 188 188 188 188 188 188

250 250 250 250 250 200 250 250 250 250 250 200

175 175 175 175 175 150 175 175 175 175 175 150

35 35 35 35 35 35 35 35 35 35 35 35

0.6

300

255 255 255 255 255 255

250 250 250 250 250 200

175 175 175 175 175 150

2.0 2.0 2.0 2.0 2.0

2.0

35 35 35 35 35 35

See Figures 2 and 3 for current rating at specified operating case temperature. See Figure 1 for free air current rating. See Figure 6 for instantaneous on-state current vs on-state voltage (typical). See Figure 5 for IGT vs TC. See Figure 4 for IH vs Te. For more than one full cycle rating. see Figure 9. See Figure 8 for tgt vs IGT. See Figure 7 for VGT vs TC.

(9) Test conditions are as follows: iT = 1 amp tor s 1.6 amp devices and 2 amp for <! 3 amp devices. Pulse duration = 50l'sec. dv/dt = 20 VII's. dildt = -10 amps/as for ,,;; 1.6 amp devices. and -30 amps/p.S for <! 3 amp devices.IGT = 200 rnA @ turn-on. (10) See Figure 2 (A,B.C.D,E) for maximum allowable case temperatures @ maximum rated current. (11) Pulse width -s 31'S. (12) IGT = 40 rnA maximum @ - 40°C for C122 devices. (13) VGT = 2.0 V maximum @ -40°C for C122 devices. (14) Initial on-state current = 200 rnA (DC) for 1 to 20 amp devices, 400 rnA (DC) for 25 to 70 amp devices.

49

_ TECCOR ELECTRONICS

INC

73

DEI8872819

000104.:1

.SCR's-Non Sensitive Gate

,

T-c;l5 _

Dr
VGT
DC Gate-Trigger Voltage VD = 12 vac RL = 60U
(8)

~'..

Part Number
Isolated Non·lsolated

IT
A

VORM & ·VRRM

Repetitive Peak Off-State Forward & Reverse Voltage

IGT"'~;
DC Gate-Trigger Current VD = 12 VDC RL = 60U
(4)

IDRM & IRRM

Peak Off-State Forward & Reverse Current tit VDRM & VRRM

VTM
Peak On-State Voltage at Max Rated RMS Current TC = 250G
(3)

TYPE

i i•
A

KAG

~,
A

TO·220AB

To·218

ISOLATED FASTPAK Noli·ISOLATEoNON· IT(RMS) IT(AV) To-3BASE TO·220AB To'218 MAX 25 25 25 25 25 25 25 25 25 25 25 35 35 35 35 35 35 50 50 50 50 50 55 55 55 55 55 65 65 65 65 65 65 65 65 65 65 70 70 70 70 70 MAX 16 16 16 16 16 16 16 16 16 16 16

11 I
'A

Maximum On-State Current

(I)

Amps

rnA

Volts

KAG

Te
Volts MIN 30 50 100 200 400 600 50 100 200 400 600 30 50 100 -200 400 600 50 100 200 400 600 50 100 200 400 600 50 100 200 400 600 50 100 200 400 600 50 100 200 400 600 MIN rnA MAX

250e

Te

1000e

Te = 1250e

Te
Volts MAX

250

Te = 1250e
MIN 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2

FORDIMENSIONALUTUNES& PACKAGE ARIATIONSEE PAGE67 O V S S0325L S0525L S1025L S2025L S4025L 86025L S0325R S0525R S1025R S2025R 84025R S6025R 2N6504 2N6505 2N6506 2N6507 2N6508 S0335J S0535J S1035J S2035J S4035J S6035J S055QJ S1050J S2050J 84050J S6050J S0335W S0535W S1035W S2035W S4035W S6035W

MAXIMUM _01 .01 .01 .01 .• 01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .02 .02 .02 .02 .02 .02 .02 .02 .02 .02 .02 .02 .02 .02 .02 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0

MAX 1.5 1.5 1.5 1.5 1.5 1.5

1
1

30
30 30 30 30 30 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50

1
1 1 1

Amps

25

1.6 1.6 1.6 1.6 1.6 1.6

1.8
1.8 1.8 1.8 1.8 1.8 1.8 1.8 1,8 1.8 1.8

22
22 22 22 22 22 32 32 32 32 32 35 35 35 35 35 41 41 41 41 41 -41 41 41 41

Amps

35

Amps

50

5 5 5 5 5 5 5 5 5

5
5 5 5 5 5 5 5" 5 5 5 5 5 5 5 5 5 5 5 5 5 5

Amps
S0565P S1065P S2065P S4065P S6065P S0565J S1065J S2065J S4065J S6065J

55

S0555W S1055W S2055W S4055W S6055W -

Amps

65

41
45 45 45 45 45

Amps

70

S0570W S1070W S2070W S4070W S6070W

1.0 1.0 1,0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1,0 1.0 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1,5 1.5 1.5 1.5 1.5

1.8
1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8

1.8 1.8
1.8 1.8 1.8 1.8 1.8

1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 2.0 2.0 2.0 2.0 2.0 2.0 2.0· 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0

GENERAL NOTES • Teccor's 2N6394 Serres. 2N6400 Series. and 2N6504 Series devices conform to all JEDEC registered data. • All measurements are made at 60 Hz with a resistive load at an ambient temperature of + 250G unless otherwise specified. • Operating temperature range (TJ) is - 650G to + 1250G for TO-92 devices. OOGto + 1250G for Fastpak. and - 40°C to + 1250C for all other packages. • Storage temperature range (TS) is -650C to + 1500G for TO-92 devices. - 4QOC + 1500C to for TO·202 and TO-220 devices. -20oG to + 1250C for Fastpaks. and -40oG to + 1250G for all others. • Lead solder temperature is a maximum of 2300C for 10 seconds maximum; 1116" from case. • The case temperature {TG} is measured as shown on dimensional outline drawings. See "package dimensions" section of catatog_

NOTES FOR JEDEC DEVICES 1. 2N6400·6405 series of devices also conform to the following specmcanons a. Maximum VGT = 2.5 volts (fj - 40°C b Maximum IH = 60 milliamps @ -40°C 2. 2N6504·650B a. Maximum b. Maximum c. Maximum series of devices also conform to the following spec.ncauons VGT = 1.5 volts @ -40'G IGT = 75 milliamps @ - 40°C IH = 40 mil!iamps @ - 400C

50

73

DE18872819

0001044

Electrical Specifications
:
j

T T-:lS -0 I
di/dt
Maximum Rate of Changeof On·State Current IGT = 150mA 't~th 011's RiseTime

l>

JH
DC Holding Current Gate Open (5) (14)

IGM
Peak Gate Current (11)

PGM
Peak Gate Power Dissipation (11)

PG(AV)
Average . Gate Power Dissipation

I1SM
Peak One Cycle Surge ForwardCurrent (6) (10)

"'.

dv/dt
Critical Rate of Applied ForwardVoltage

12t

tot
GateControhed Iuro-Dn Time Gate Pulse = 150mA Min 'tlidth = 511s 'tilth Rise Time :5 O.ll's
(7)

tq
CirCUit Commutated Turn·Off Time (9) (10)

, ~ 1
i

RMS Surge (Non-Repetitive) On-StateCurrent For a Period of 8.3 msec for Fl.5lng

Amps rnA MAX 40 40 40 40 40 40 3.5 3.5 3.5 3.5 3.5 3.5 2.0 2.0 2.0 2.0 2.0 3.5 3.5 3.5 3.5 3.5 3.5 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 5.0 5.0 5.0 5.0 5.0 35 Amps Walls Walls 60Hz MAX 50Hz MAX 300 300 300 300 300 300 255 255 255 255 255 425 425 425 425 425 425 550 550 550 550 550 550 550 550 550 550 750 750 750 750 750 800 800 800

Volts/I's TC = 100DC TC=125 C

D

Amps2sec

,,8

I'S

"S

MIN 250 250 250 250 250 200

MIN 175 175 175 175 175 150 510 510 510 510 510 510 375 375 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 175 175 175 175 175 175 175 175 175 175 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200

MAX 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 '2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5

MAX 35 35 35 35 35 35

35
35

35
35 35 20 20

20
20 20 35 35 35 35 35 35 40 40 40 40. 40 40 40 40 40 40 50 50 50 50 50

50 50 50 50 50 50 50 50 50

50
50 50 50 50 50 50 50 50 50 50 50 50 50 50 50

0.8 0.8 0.8 0.8 0.8 0.8 0.5 0.5 0.5 0.5 0.5 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 1.0 1.0 1.0 1.0 1.0

5.0
5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0

50
50

to
1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0

50
50 50 50 50 50 50 50

50
50 50 50 50 50

350 350 350 350 350 350 300 300 300 300 300 500 500 500 500 500 500 650 650 650 650 650 650 650 650 650 650 900 900 900 900 900 950 950 950950 950 950 950 950 950 950

a75
375 375 1035 1035 1035 1035 1035 1035 1750 1750 1750 1750 1750 1750 1750 1750 1750 1750 3360 3360 3360 3360 3360 3745 3745 3745 3745 3745 3745 3745 3745 3745 3745

BOD
800 800 800 800 800 800

250 250 250 250 250 200 425 425 425 425 375 425 425 425 425 375 425 425 425 425 375 425 425 425 425 375 425 425 425 425 375

175 175 175 175 175 150 300 300 300 300 250 300 300 300 300 250 300 300 300 300 250 300 300 300 3DO 250 300 300 300 300 250

35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35

NOTES TO ElECTRICAL SPECIFICATIONS (1) (2) (3) (4) (5) (6) (7) (8) See FigUres 2 and 3 for current rating at specified operating case temperature. See Figure 1 for free air current rating See Figure 6 for instantaneous on-state current vs on-state voltage (typical) See Figure 5 for fGT vs TC. See Figure 4 for IH vs TC. For more than one full cycle rating. see Figure 9. See Figure 8 for tgt vs IGT. See Figure 7 for VGT vs TC.

(9) Test conditions are as follows: iT = 1 amp for :5 1.6 amp devces and 2 amp for ;;, 3 amp devices. Pulse duration = 5011sec.dvldt = 20 V/I's. dudt = -10 amps/lls for :5 1.6 amp devices. and -30 amps/ttS for", 3 amp devices. IGT = 200 mA @ torn-on (10) See Figure 2 (A.B.C.q.E) Ior maximurn allowable case temperatures @ maximum rated current. (11) Pulse width -s 3"s. (12) IGT = 40 mA maximum @ - 40°C for C122 devices. (13) VGT = 2.0 V maximum @ -400C for C122 devices. (14) Initial on-state current = 200 mA (DC) for 1 to 20 amp devices. 400 mA (DC) for 25 to 70 amp devices.

51

TECCOR

ELECTRONICS

INC

73

DE18872819

O[J0104~

__

T-.25

-ot

SCR's-Non
TYPE

PLASTIC TO·92

Sensitive Gzte

THERMOTAB TO·220AB

TYPE 1 T()'202

TYPE 2 T()'202

NON·ISOLATED TO·220AB

ISOLATED T()'218X

NON·ISOLATED T()'218X

FASTPAK TO·3 BASE

1.0 Amp 1.6 Amp 3.0 Amp 4.0 Amp 6.0 Amp 8.0 Amp 10.0 Amp 12.0 Amp 15.0 Amp 16.0 Amp 20.0 Amp 25 35 50 55 65 70 Amp Amp Amp Amp Amp Amp

50/145
6.7

6.3/50 5.6/45
4.0 4.3 3.9

9.5no
2.1/40 1.9
1.7 1.5

3.4 3.0
2.1 1.95

3.4

1.8
2.5 1.1 .70 .80 .50

.86
.60

.80

ELECTRICAL

ISOLATION

Most Teccor isolated SCR packages will withstand a minimum high potential test of 2500 VAC RMS from leads to case over the device's operating temperature range. See table for standard and optional isolation ratings.

ELECTRICAL ISOLATION FROM LEADS TO CASE

U.L. RECOGNIZED FILE #71639 ISOLATED TO-218 FASTPAK TO·92 Standard No ISOLATED TO-220AB

1600
2500

Standard Optional'

Standard No

Standard No

4000
'For 4000VIsolation Use "V" Suffix

NQ

FIGURE 1A - Maximum Allowable Ambient Temperature vs RMS On-State Current

FIGURE 1B - Maximum Allowable Ambient Temperature vs Average On-State Current

120r---'--~r---.,....----'r---.,....---r--..., CURRENT WAVEFORM: Srnusotdal LOAD: Ass·slive or Inductive CONDUCTION ANGLE: IBO' FREE AIR RATING

02

04

06

08

1.0

1.2

1.4

1.6

1.8

2.0

2.2

02

04

06

08

10

1.2

14

RMS On-State

CUJCenlliT (RMS) I-Amps

52

Average On-State

Current liT (AV) I-Amps

TECCOR ELECTRONICS

INC

73

DE 188-t2819

0001046

'SCR's-Non Sensitive Gate

FIGURE 2A Maximum Allowable Case Temperature vs RMS On-State Current FIGURE 21f 0

I 'I-;l5-01

Maximum Allowable Case Temperature vs RMS On-State Current

~ ~ 1! ~ E ~ ~
c,

"

t::_

i3e

110

~ ~
0

I
~
5 E

100

90

I
~ ~ :;
E

"

:1l

BO

.Q

;;:
70

70

~ :;
60 50 10 20 30 40 RMS On-State Current liT (RMS) )-Amps

60

50 0 RMS On-State Current liT (RMS) )-Amps

10

t2

FIGURE 2C -

Maximum Allowable Case Temperature vs RMS On-State Current

FIGURE 20 -

Maximum Allowable Case Temperature vs RMS On-State Current

61!

~ ~

I-""<"I!!_::-+--,I--{;ONDUCTION

CURRENT WAVEFORM Sinusoidat LOAD: Besrstrve or Inductive ANGlE- 160' CASE TEMPERATURE; Measure es shown on dimensional drawings

1101---+-~+~~~~~~-+---;---r--t---;

~ 1001----+--+-~1--

~ !
= z
o

90

I'----t--+--I-~

80

;;:
E :;

~
~

!
-"

801---+--+--1---;--701'----+--+--1---t--+--~

lj

70

60 504_L ~_L__~ __ ~~L_ ~

~
50L-_-L __ ~_
_L __ ~ _ _L __

LL__-L 24

__

L_~~

12 RMS On-Stale Current lIT (RMS) )-Amps

16

20

t2

t6

20

28

32

36

RMS On-State Current liT (RMS) )-Amps

FIGURE 2E -

Maximum Allowable Case Temperature vs RMS On-State Current

CURRENT WAVEFORM: Smusoidal lOAD;.-AesistlVe or ]nductive ANGLE: lBQ~ CASE TEMPERATURE: Me'sure.os shown on dlmenstonat drawings

FIGURE 3A - Maximum Allowable Case Temperature vs Average On-State Current

CURRENT WAVEFORM: S'nusordal LOAD: ReSISbve or fnducHve I-_CONDUCTION ANGlE- 180' CASE TEMPERATURE: Measure 8S shewn on dimensronal dra'h'mgs

~ ~ ~ ~ 1001---+---/' 8. ~ ~ ~ ~
~ E

1-"",!""=;;/---+---tCONoucnON

f-\:~~~I:-

I
~

~ ~
-"
f,l
.Q E

~ 1

100 ~-----++-__,

90

801---+---;

__

-+-_-+~~-~~~~_-~

~ ~

80

;;:
701'----~---~----+----+---~_4~~~+_~ 70

:i :;

60

50 10 RMS On-state Current fiT (RMS) )-Amps 15 20 25 30 Average On-State Current (IT {AVJ )-Amps

53

fL. TECtOR It -

ELECTRONICS
. ..

INC

73

DE:•• ~~

tc~.L"1

;-SCR's-Non Sensitive Gate··~-.-' ..

-c'
fiGURE 38 - Maximum Allowable Case Temperature . '. . vs Average On-State. Current '.
CURRENT WAVEFORM, SinuSOIdal LOAD: Resistr"'e-oOr lnducrrve ANGLE 160' CAse TEMPERATURE, Measure as shOwn on dImensional oraYtings 1-~~.!;:--~+---tCONDUCTION

DDD1D4-::;-5--·T-~T~-~5 ..Ot •
.r-: -

FIGURE 3C - Maximum Allowable Case Temperature vs Average On-State Current

J-_"'"""",'-_-f---f-CONDUCTION

CURRENT WAVEFORM Sinusoidal LOAO;. Beststtve cr Jnducnve ANGLE, lBO' CASE TEMPERATURE, Measu,. as-shown on dimensional drawings

::l o
_g,
0

90 80 70 60
50L_==_~__~_~_~ ~_~
~L__~L_-_L_~~

~
E

" ~
~ :2

o
Average
On-State

10
Average On-State Current liT (AY)

12

14

Current liT (AV) I-Amps

I-Amps

FIGURE 3D - Maximum Allowable Case Temperature vs Average On-State Current

FIGURE 3E -- Maximum Allowable Case Temperature vs Average On-State Current

130r----~-----.----.-----r_---_,

U
0,

r-~~=lf----II-'CONDUCTION

CURRENT WAVEFORM. Slnuscrdal LOAD; nesrsuve or rnducwe ANGtE: 180· _CASE TEMPERATURE: Measure as shown on dnnenstonal drawmgs

r-.31!~c--t-----+

CURRENT W~VEFORM: SmusOldar LOAD aes.suve or lnducuve CONDUCTION ANGLe, 180' CASE TEMPERATURE' Measure as shown en dlmens.cnal drawings

~
~

e 100 I----jf------'''-If--__::_ il.

90f------~------~
U

110r------~--~~~~~-r-------r------r_--~

I8°1-------1------jf-----~:~~--1------1_--1_-1 "5 ~
70f-------f------if------jf---.-:
:2

:c

" 5
E

~ ~ ~
70 60

601----~----t_--'--_+-----t_----+-+__l
50L_ ~
_L ~

~
24

~L_ 16

~ __ _L __ ~ 20 10 20 30
(A V}

12

40 )-Amps

50

Average On-State Current tiT (AY) I-Amps

Average On-State Current liT

FIGURE 4 -

Normalized DC Holding Current vs Case Temperature

2.0

FIGURE 5 -- Normalized DC Gate-Trigger Current vs Case Temperature

2.0

1
I

1.5

I I 1 I I I I

INITIAL ON'~TATE I CURRENT .. 200 rnA (DC) FOR 1·20 AMP DEVICES. AND 400 rnA (DC} FOR 25·70 AMP DEVICES

1.5

f\
r
I

1
I

r r

-:0
'f-

:I:

!~ I", ,
1.0

,
1

r-,
"-..,
<,

I 1

·, .
,
[ I 1

-,
_-

-.
;.

'0 11i a:
0

Ii

t
I I 1 I I I 1

i"-.....

,
[ I I

.5

r-,'-....;.

I
1 1 I

I 1

,
I

+125

-.•
.5

."'" <,
,
+25

r-,

......

, r
I

"-.._

,
r
1 1

........., ~

·
-15

-40

-15

+25

+65

+105

-40

+65

+105

+ 125

Case Temperature (Te)-oe

Case Temperature (T c)-°e

54

TECCOR ELECTRONICS

INC

73

DE 18872819

0001048

SCR's-Non
'90 80

Sensitive Gate
200 180

r-

T-..25 -01

FIGURE 6A - Instantaneous On-State Current vs On-State Voltage (Typical)

FIGURE 68 - Instantaneous On-State Current vs On-State Voltage (Typical)

E <:

c.

~
I

70

60

.e c
0

~ 160 ~ 1 140 ~ 120

100 80 60 40 20

TC = 25'C

/
65 (. 70 liMP DEVICESJ

/
~

E
c

50

0 m

40

~ 0

~ ~ 30

!l
0

50 & 55 AMP DEVlCEll

7/.
~35 1.0

II
~

/
~ ~

20

/
~
o
.6 .8

AMP DEVICES

10

1.2

1.4

/'

1.6

Instantaneous On-Stale VoUage f'T)-Volts 1.0 1.2 1.4 1.6

Instantaneous On-Slate Voltage (YT}---Volts

FIGURE 8 - Typical Turn-On Time vs Gate Trigger Current FIGURE 7 Normalized DC Gate-Trigger Voltage vs Case Temperature
:.. 6-

1.5
I

h <,
I I I I I I

• ~t
f-

~ 1.0 gj
I-

r r
I I I I

,
I

r-.r-,

<;

>
0
0 f[

CI

..

, ,
I

r--.... ~

\ '\ \. \ \
\
............. ..............

AMP DEVIlES

TC = 25"C

/50-70 AMP DEVICES

.5

r r

I I I I I

r-.
o
10 18

15·35 AMP DEVIC:s(

-,
~

r-,
f:::::

r-,_
20

1-4 .AMP lJEVIC1S / 30

DC Gale

--60
('GT)-mA

r100 200

I I I

40
Tngger

50
Current

80

-40

-15
Case

+25
Temperature

+65 (TC)_oC

+105

+125

FIGURE 108 - Power Dissipation (Typical) vs RMS On-State Current FIGURE 10A - Power Dissipation (Typical) vs RMS On-State Current
4.0

(Figures 10C & 10D on next page)

CURRENT WAVEFORM. Half Blne Wave 16 ~LOAD: Resistive or Inductive CONDUCTION ANGLE: 160' ~ ~ '!o. 14 12

J J J .1. J

r-- LOAD: gesreuve or Induclive

CURRENT WAVEfORM: Hal! Stne Way.

..! J JI .. I

/
/
V

CONDUCTION ANG~E: 160"

l~f20 AMP DEVICES,

o .§

V
1 6-40 AMP DEVICES-./

10

12 AMP DEV1es-.,.

1 AMP DEVICE

jV

c5
IL

in

; o
~

rHO AMP PEVlcls........:::

V/ V
17

6
4 2

/,

~
c5
<:

~v

~
RMS On·Slale Current (IT (RMS)(-Amps

l/

A~
10 12 14 16 18 20 RMS On·Slale Currenl (IT (RMS))-Amps

55

::..::__:==:::===::::::::::::=::=-::~::::::.:=::::::===:::::::::===-==;- .. ----- -TECCOR ELECTRONICS INC 73

<~-~-

----

DE 18872819

0001049

SCR's-Non Sensitive Gate __ '

"

r- 1-~6

- 01

FIGURE 9 - Peak Surge Current vs Surge Current Duration

1000 800 65'AM~ 600 400 300
(/)

<{

0..

1 :2
~
en
E !!:!
Ql

~ 200

100 80 60 50 40

-r----r::::::;:::

---

........ "-

P F'Asr7S:fRI!ooo.

i""""-

to- r--;

r-- ...

r-- f=!!!!!

.......... r-..
r-.

'-

"""'" to-~i"=
I"t--;;;~

1-1--

r---~65A

SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive AMS ON-STATE CURRENT: liT (RMS)]: Max. Rated Value at Specified Case Temperature f'APTO -218

::"....

r==:==

t--- r-- r-. ~

:--.

f::::: r=: r: r-r-r-. r-r===

70

AM

P )1Z

:;

I--

~ c

r--:::::-- r.:::::- r-

0
Q)

30 ~ 20

> -= ~
Ql

--

~AMp 15AM DIZVIC~ PDE r-VICIZ~

~VIC~S i'--- I"'--,. So A'jPDEV~ICES 1 35) MPD

~~

<OAM
~P

'r

€ViCtl

r- t-rr-I-

I-

r--;-

~~ ~ ~ ~

DEVJclJ-

0..

II:

i" f::::

;::--.....

~I-r1-1--

6Ql

10 8 6 5 4

~~ ~r----....::

t-

f::::: r- t- r-I-:-. r- t.........

r-~

I--

en
-" <0

e>
:J

J:tm!
S 3~ VICES AMp D ~ €VICEs I I III

s11Frf't ~

a..

Ql

GATE CONTROL MAY BE LOST 3 t-DURING AND IMMEDIATELY FOLLOWING SURGE CURRENT INTERVAL . 2 t-OVERLOAD MAY NOT BE REPEATED UNTIL JUNCTION TEMPERATURE HAS RETURNED TO STEADY-STATE RATED VALUE.
r
I

N'OA1p~

~MPbl~W

,I

r--f-~VICi::

I""S

56

8 10

20

30 40 5060

80100 Cycles

200

300 400

600 800 1000

Surge Current Duration-Full

FIGURE 10C - Power Dissipation (Typical) vs RMS On-State Current

32

FIGURE 100 - Power Dissipation (Typical) vs RMS On-State Current

i
~

28 CURRENT WAVEFJRM_ Hall ame Wave LOAO- Resislfve or tnducuve CONDUCTION ANGLE. 180·

24 ~

<E
c5
a.

§ 20

'[

16 12

<i o

*~
~ «

I
'" ~

J# bf
:./
~
A

r;,Q

l#

;l

R<:l 't:~

~ &-~

50

~ t i ~ 5
iii 8
.'<
c o

40

~--+---t--t----+ ~:'_____':~-+---l ~-+---+--~~~--t--+--~ ~-+---+-77Lt---+---t--+--~

! *
£
"

30

20

10

~-4-~~--+--~-~--+--~
10 20 30 40 50 60 70

12 RMS
On-State

16
Current

20
(tT

24 (RMS)(-Amps

28

32

36

RMS On·State Current liT (RMS))-Amps

56