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2-Vlci Cmos

The MOSFET is the most common transistor used in modern integrated circuits because it can be miniaturized more than other types of transistors. CMOS technology uses both NMOS and PMOS transistors on the same chip and is particularly efficient due to its low power consumption. A MOSFET consists of a polysilicon gate separated from a silicon substrate by a thin oxide layer, with doped source and drain regions on either side of the gate.

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46 views

2-Vlci Cmos

The MOSFET is the most common transistor used in modern integrated circuits because it can be miniaturized more than other types of transistors. CMOS technology uses both NMOS and PMOS transistors on the same chip and is particularly efficient due to its low power consumption. A MOSFET consists of a polysilicon gate separated from a silicon substrate by a thin oxide layer, with doped source and drain regions on either side of the gate.

Uploaded by

bhieestudents
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PPT, PDF, TXT or read online on Scribd
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MOSFET Overview

The MOSFET is the dominant device used in modern integrated circuits because it can be scaled to smaller dimensions than other types of devices. The dominant technology for MOSFET is complementary MOSFET (CMOS) technology, in which both n-channel and p-channel devices (NMOS and PMOS) are provided on the same chip. CMOS technology is particular attractive because it has the lowest power consumption of all IC technology.

Figure shows a perspective view of an n-channel MOSFET prior to final metallization. The top layer is a phosphorus-doped silicon dioxide (P-glass) that is used as an insulator between the polysilicon gate and the gate metallization and also as a gettering layer for mobile ions.

MOSFET Structure & Fabrication

1-

p + source and drain regions n-type substrate connected to the positive potential in a circuit

n + source and drain regions p-type substrate connected to the negative potential in a circuit

( Gate is made of polysilicon which is made up of multiple crystal structures, not a single crystal like the substrate. The poly is very heavily doped to be n+ so that it is a good conductor. )

( Permittivity of free space

2-

CVD (chemical vapor deposition)

Photoresist

Cross-sectional views of NMOSFET fabrication sequence

Formation of SiO2 ,

Si3N4, and photoresist layers

)e)

Source and drain

phosphorus-doped silicon dioxide (P-glass)

)f) P-glass deposition

Boron implant

Field oxide

)g) MOSFET cross section

Gate
)h) MOSFET top view

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