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Ece201at2

This document contains a homework assignment on electronics devices and circuits for a class. It includes 10 questions across two parts: Part A asks questions about determining the position of the Fermi level in N-type and P-type semiconductors at different temperatures and donor concentrations. Part B asks questions about calculating conductivity of silicon under intrinsic and doped conditions, determining current density through a sample under an applied field, calculating resistivity and resistance of doped germanium samples, and includes diagrams.

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29 views

Ece201at2

This document contains a homework assignment on electronics devices and circuits for a class. It includes 10 questions across two parts: Part A asks questions about determining the position of the Fermi level in N-type and P-type semiconductors at different temperatures and donor concentrations. Part B asks questions about calculating conductivity of silicon under intrinsic and doped conditions, determining current density through a sample under an applied field, calculating resistivity and resistance of doped germanium samples, and includes diagrams.

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uttamlpu
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HOME WORK: 1 School: SEEE Department: EEE Name of the faculty member: Krishan Arora Course No: ECE201

Course Title: Electronics Devices and Circuits Class: B.Tech EEE Term: 2 Section: E3014 Batch:2010 Max. Marks: 10 Date of Allotment: 17/10/11 Date of Submission: 31/10/11 1) 2) 3) 4) PART-A In an N-type semiconductor, the Fermi level is 0.3ev below the conduction level at a room temperature of 300K. If the temperature is increased to 360K, determine the new position of the Fermi level. In a P-type semiconductor, the Fermi level is 0.3ev above the valence band at a room temperature of 300K. Determine the new position of the Fermi level for temperatures of (a) 350K and (b) 400K. In an N-type semiconductor, the Fermi level lies 0.2ev below the conduction band. Find the new position of the Fermi level if the concentration of donor atoms is increased by a factor to (a) 4 and (b) 8. Assume kT = 0.025ev. Consider the Fig. below and find the following:

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PART-B 6) Find the conductivity of silicon (a) in intrinsic condition at a room temperature of 300K, (b) with donor impurity of 1 in 108, (c) with acceptor impurity of 1 in 5 X 107 and (d) with both the impurities present simultaneously. Given that ni for silicon at 300K is 1.5 X 1010 cm-3 , n = 1300 cm2/V-s, p = 500 cm2/V-s, number of Si atoms per cm3 = 5 X 1022. 7) A sample of silicon at a given temperature T in intrinsic condition has a resistivity of 25 X 10 4 cm. The sample is now doped to the extent of 4 X 1010 donors atoms/cm3 and 1010 acceptor atoms/cm3. Find the total conduction current density if an electric field of 4V/cm is applied across the sample. Given that n = 1250 cm2/V-s and p = 475 cm2/V-s at the given temperature. 8) A specimen of pure germanium at 300K has a density of charge carriers 2.5 X 1019/m3. It is doped with donor impurity atoms at the rate of one impurity atom every 10 6 atoms of germanium. All impurity atoms are supposed to be ionised. The density of germanium atom is 4.2X10 28 atoms/m3. Calculate the resistivity of the doped germanium if electron mobility is 0.38 m2/V-s. If the Germanium bar is 5 X 10 -3 m long and has a cross sectional area of (5 X 10 -6)2 m2, determine its resistance and the voltage drop across the semiconductor bar for a current of 1 A flowing through it. 9)

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Date: 17/10/11 Remarks by HOD (Mandatory)

Sig. of Faculty member Sig. of HOD with date

Remarks by HOS (Mandatory) Sig. of HOS with date

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