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BC556, B BC557, A, B, C BC558, B: Mccsemi

This document provides specifications and characteristics for PNP silicon amplifier transistors, models BC556, BC557, and BC558. It includes maximum ratings, electrical characteristics like current gain and breakdown voltages, small signal parameters like bandwidth and capacitance, and typical curves showing relationships between variables like current, voltage, and temperature. Pin configurations and mechanical dimensions are also listed.

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Rogerio Morais Do Nascimento
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109 views

BC556, B BC557, A, B, C BC558, B: Mccsemi

This document provides specifications and characteristics for PNP silicon amplifier transistors, models BC556, BC557, and BC558. It includes maximum ratings, electrical characteristics like current gain and breakdown voltages, small signal parameters like bandwidth and capacitance, and typical curves showing relationships between variables like current, voltage, and temperature. Pin configurations and mechanical dimensions are also listed.

Uploaded by

Rogerio Morais Do Nascimento
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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MCC

Features
l Through Hole Package l 150oC Junction Temperature
Pin Configuration Bottom View

 
omponents 21201 Itasca Street Chatsworth    !"# $
%    !"#

BC556,B BC557,A,B,C BC558,B


PNP Silicon Amplifier Transistor 625mW

Mechanical Data
l Case: TO-92, Molded Plastic l Polarity: indicated as above.

TO-92

Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Collector-Emitter Voltage Symbol Value -65 VCEO -45 -30 -80 VCBO -50 -30 VEBO -5.0 IC Pd Pd
RqJA

Unit V
C

Collector-Base Voltage

BC556 BC557 BC558 BC556 BC557 BC558

V V mA mW mW/oC W mW/oC
o
D

Emitter-Base Voltage Collector Current(DC) Power Dissipation@TA=25oC Power Dissipation@TC=25oC Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Case Operating & Storage Temperature

-100 625 5.0 1.5 12 200 83.3

G
DIMENSIONS

C/W C/W
o
DIM A B C D E G

RqJC

Tj, TSTG -55~150

INCHES MIN .175 .175 .500 .016 .135 .095

MAX .185 .185 --.020 .145 .105

MM MIN 4.45 4.46 12.7 0.41 3.43 2.42

MAX 4.70 4.70 --0.63 3.68 2.67

NOTE

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BC556 thru BC558B

MCC
Symbol Min Typ Max Unit

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)


Characteristic

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 5.0 5.0 5.0 80 50 30 V 65 45 30 V V

Collector Base Breakdown Voltage (IC = 100 Adc)

Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0)

ON CHARACTERISTICS
DC Current Gain (IC = 10 Adc, VCE = 5.0 V) hFE BC557A BC556B/557B/558B BC557C BC556 BC557 BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C VCE(sat) VBE(sat) VBE(on) 0.55 0.62 0.7 0.7 0.82 1.0 V --0.3 V 120 120 120 120 180 420 90 150 270 170 290 500 120 180 300 500 800 800 220 460 800 V

(IC = 2.0 mAdc, VCE = 5.0 V)

(IC = 100 mAdc, VCE = 5.0 V)

Collector Emitter Saturation Voltage (IC = 100mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 100 mAdc, IB = 5.0mAdc) BaseEmitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc)

SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) fT BC556 BC557 BC558 Cob 280 320 360 3.0 6.0 pF MHz

Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz)

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BC556 thru BC558B


BC557/BC558
2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 0.2 TA = 25C

MCC
VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = 10 V

0.3

VCE(sat) @ IC/IB = 10 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mAdc) 50 100

Figure 1. Normalized DC Current Gain

Figure 2. Saturation and On Voltages

2.0 VCE , COLLECTOREMITTER VOLTAGE (V) VB , TEMPERATURE COEFFICIENT (mV/ C) TA = 25C 1.6

1.0 55C to +125C 1.2 1.6 2.0 2.4 2.8

1.2 IC = 10 mA IC = 50 mA IC = 20 mA IC = 200 mA IC = 100 mA

0.8

0.4

0.02

0.1 1.0 IB, BASE CURRENT (mA)

10 20

0.2

10 1.0 IC, COLLECTOR CURRENT (mA)

100

Figure 3. Collector Saturation Region


f T CURRENTGAIN BANDWIDTH PRODUCT (MHz) ,

Figure 4. BaseEmitter Temperature Coefficient

10 7.0 C, CAPACITANCE (pF) 5.0 Cob Cib TA = 25C

400 300 200 150 100 80 60 40 30 20 0.5 VCE = 10 V TA = 25C

3.0 2.0

1.0 0.4 0.6

1.0

2.0

4.0 6.0

10

20 30 40

1.0

2.0 3.0

5.0

10

20

30

50

VR, REVERSE VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mAdc)

Figure 5. Capacitances

Figure 6. CurrentGain Bandwidth Product

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BC556 thru BC558B


BC556
1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 5.0 V TA = 25C 2.0 1.0 0.5 V, VOLTAGE (VOLTS) TJ = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4

MCC

0.2 0.2 0 0.2 VCE(sat) @ IC/IB = 10 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (AMP) 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)

0.1 0.2

Figure 7. DC Current Gain

Figure 8. On Voltage

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

2.0 VB, TEMPERATURE COEFFICIENT (mV/ C)

1.0

1.6 IC = 10 mA 20 mA 50 mA 100 mA 200 mA

1.4

1.2

1.8

VB for VBE

55C to 125C

0.8

2.2

0.4 TJ = 25C 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20

2.6

3.0 0.2

0.5 1.0

50 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)

100 200

Figure 9. Collector Saturation Region

Figure 10. BaseEmitter Temperature Coefficient

f T CURRENTGAIN BANDWIDTH PRODUCT ,

40 TJ = 25C C, CAPACITANCE (pF) 20 Cib

500

VCE = 5.0 V

200 100 50

10 8.0 6.0 4.0 2.0 0.1 0.2 Cob

20

0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS)

50 100

100 1.0 10 IC, COLLECTOR CURRENT (mA)

Figure 11. Capacitance

Figure 12. CurrentGain Bandwidth Product

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This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

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