2N5564/5565/5566

Vishay Siliconix

Matched N-Channel JFET Pairs

PRODUCT SUMMARY
Part Number
2N5564 2N5565 2N5566

VGS(off) (V)
0.5 to 3 0.5 to 3 0.5 to 3

V(BR)GSS Min (V)

40 40 40

gfs Min (mS)

7.5 7.5 7.5

IG Typ (pA)
3 3 3

jVGS1 VGS2j Max (mV)

5 10 20

FEATURES
D D D D D D D Two-Chip Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 3 pA Low Noise: 12 nVHz @ 10 Hz Good CMRR: 76 dB Minimum Parasitics

BENEFITS
D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signals D Maximum High Frequency Performance

APPLICATIONS
D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High-Speed Comparators D Impedance Converters D Matched Switches

DESCRIPTION
The 2N5564/5565/5566 are matched pairs of JFETs mounted in a TO-71 package. This two-chip design reduces parasitics for good performance at high frequency while ensuring extremely tight matching. This series features high breakdown voltage (V(BR)DSS typically > 55 V), high gain (typically > 9 mS), and <5 mV offset between the two die. The hermetically-sealed TO-71 package is available with full military processing (see Military Information).

For similar products see the low-noise U/SST401 series, and the low-leakage 2N5196/5197/5198/5199 data sheets.

TO-71
S1 1 D1 6 D2 G2

3 G1 Top View

4 S2

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "80 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16 from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to 200_C Document Number: 70254 S-04031Rev. D, 04-Jun-01 Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 325 mW Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 650 mW

Notes a. Derate 2.6 mW/_C above 25_C b. Derate 5.2 mW/_C above 25_C www.vishay.com

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2N5564/5565/5566
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5564 2N5565 2N5566

Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentc Drain-Source On-Resistance Gate-Source Voltagec Gate-Source Forward Voltage

Symbol

Test Conditions

Typa

Min

Max

Min

Max

Min

Max

Unit

V(BR)GSS VGS(off) IDSS IGSS IG rDS(on) VGS VGS(F)

IG = 1 mA, VDS = 0 V VDS = 15 V, ID = 1 nA VDS = 15 V, VGS = 0 V VGS = 20 V, VDS = 0 V TA = 150_C VDG = 15 V, ID = 2 mA TA = 125_C VGS = 0 V, ID = 1 mA VDG = 15 V, ID = 2 mA IG = 2 mA , VDS = 0 V

55 2 20 5 10 3 1 50 1.2 0.7

40 0.5 3

40 0.5 3

40 V 0.5 3

30
100 200

30
100 200

30
100 200

mA pA nA pA nA

100

100

100

Dynamic
Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Forward Transconductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage Noise Figure gfs gos gfs Ciss Crss en NF VDS = 15 V, ID = 2 mA f = 1 MHz 9 VDS = 15 V, ID = 2 mA f = 1 kHz VDS = 15 V, ID = 2 mA f = 100 MHz 35 8.5 10 7.5 12.5 45 7.5 12.5 45 7.5 12.5 45 mS mS mS 12 pF 2.5 3 3 3 nV Hz dB

7
12

7
12

VDS = 15 V, ID = 2 mA f = 10 Hz RG = 10 MW

12

50 1

50 1

50 1

Matching
Differential Gate-Source Voltage Gate-Source Voltage Differential Change with Temperature Saturation Drain Current Ratioc |V GS1V GS2| D|V GS1V GS2| DT I DSS1 I DSS2 gfs1 gfs2 CMRR VDG = 15 V, ID = 2 mA VDG = 15 V, ID = 2 mA TA = 55 to 125_C VDS = 15 V, VGS = 0 V 0.98 0.95 5 10 20 mV mV/ _C

10

25

50

0.95

0.95

Transconductance Ratio Common Mode Rejection Ratioc

VDS = 15 V, ID = 2 mA f = 1 kHz VDG = 10 to 20 V ID = 2 mA

0.98

0.95

0.90

0.90

76

dB NCBD

Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. This parameter not registered with JEDEC.

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Document Number: 70254 S-04031Rev. D, 04-Jun-01

2N5564/5565/5566
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
100 r DS(on) Drain-Source On-Resistance ( W )

On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage

200 rDS @ ID = 1 mA, VGS = 0 IDSS @ VDS = 15 V, VGS = 0 r DS(on) Drain-Source On-Resistance ( W ) I DSS Saturation Drain Current (mA)

100

On-Resistance vs. Drain Current

TA = 25_C

80 IDSS

160

80 VGS(off) = 2 V 60

60

rDS

120

40

80

40

20

40

20

0 0 2 4 6 8 10

0 1 10 ID Drain Current (mA) 100

VGS(off) Gate-Source Cutoff Voltage (V)

On-Resistance vs. Temperature

200 r DS(on) Drain-Source On-Resistance ( W ) ID = 1 mA rDS changes 0.7%/_C 160 4 5

Turn-On Switching
tr approximately independent of ID VDG = 5 V, RG = 50 W VGS(L) = 10 V tr 3 td(on) @ ID = 12 mA 2

120 VGS(off) = 2 V 80

40

Switching Time (ns)

td(on) @ ID = 3 mA

0 55 35 15 5 25 45 65 85 105 125 TA Temperature (_C)

0 0 2 4 6 8 10

VGS(off) Gate-Source Cutoff Voltage (V)

Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage

50 g fs Forward Transconductance (mS) gfs and gos @ VDS = 15 V VGS = 0 V, f = 1 kHz 40 400 gfs gos 200 24 g os Output Conductance ( mS) 500 30

Turn-Off Switching
td(off) independent of device VGS(off) VDG = 5 V, VGS(L) = 10 V tf Switching Time (ns) 18 VGS(off) = 2 V 12 td(off) 6

30

20

200

10

100

0 0 2 4 6 8 10 VGS(off) Gate-Source Cutoff Voltage (V)

0 0 2 4 6 8 10

ID Drain Current (mA)

Document Number: 70254 S-04031Rev. D, 04-Jun-01

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2N5564/5565/5566
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
14 VGS(off) = 1.5 V 12 I D Drain Current (mA) 10 0.2 V 8 0.3 V 6 4 2 0.7 V 0 0 4 8 12 16 20 VDS Drain-Source Voltage (V) 0 0 0.4 0.8 1.2 1.6 VGS Gate-Source Voltage (V) 2 0.4 V 0.5 V 0.6 V VGS = 0 V 32 0.1 V I D Drain Current (mA) 24 25_C 16 TA = 55_C 40

Transfer Characteristics
VGS(off) = 2 V VDS = 15 V

8 125_C

Output Characteristics
5 VGS = 0 V 0.1 V 4 I D Drain Current (mA) VGS(off) = 1.5 V 0.2 V 0.3 V Capacitance (pF) 0.4 V 3 0.5 V 2 0.6 V 0.7 V 1 0.8 V 0.9 V 0 0.2 0.4 0.6 0.8 1 6 24 30

Capacitance vs. Gate-Source Voltage

f = 1 MHz VDS = 0 V

18

12 Ciss Crss

0 0 4 8 12 16 20

VDS Drain-Source Voltage (V)

VGS Gate-Source Voltage (V)

Gate Leakage Current

10 nA ID = 10 mA IGSS @ 25_C TA = 125_C 100

Common-Gate Input Admittance

VDG = 15 V ID = 10 mA TA = 25_C

1 nA I G Gate Leakage

gig big

1 mA 100 pA (mS) 1 mA 10 pA TA = 25_C 1 pA IG(on) @ ID 0.1 pA 0 6 12 18 24 30 10 mA

10

IGSS @ 25_C

0.1 100 200 500 1000

VDG Drain-Gate Voltage (V)

f Frequency (MHz)

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Document Number: 70254 S-04031Rev. D, 04-Jun-01

2N5564/5565/5566
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Gate Forward Admittance
100 VDG = 15 V ID = 10 mA TA = 25_C gfg 10 (mS) (mS) gfg bfg 1 brg 10 VDG = 15 V ID = 10 mA TA = 25_C

Common-Gate Reverse Admittance

grg 0.1

+grg

0.1 100 200 500 1000 f Frequency (MHz)

0.01 100 200 500 1000

f Frequency (MHz)

Common-Gate Output Admittance

100 VDG = 15 V ID = 10 mA TA = 25_C bog 10 (mS) gog 100

Noise Voltage vs. Frequency

VDS = 15 V Hz en Noise Voltage nV / 10 ID = 1 mA

ID = 10 mA

0.1 100 200 500 1000

1 10 100 1k f Frequency (Hz) 10 k 100 k f Frequency (MHz)

Output Conductance vs. Drain Current

1000 VGS(off) = 2 V VDS = 15 V f = 1 kHz gfs Forward Transconductance (mS) 100

Transconductance vs. Drain Current

VGS(off) = 2 V VDS = 15 V f = 1 kHz

gos Output Conductance (S)

TA = 55_C 25_C 10

TA = 55_C 100 25_C

125_C

125_C

10 0.1 1.0 ID Drain Current (mA) Document Number: 70254 S-04031Rev. D, 04-Jun-01 10

1 0.1 1.0 ID Drain Current (mA) 10

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