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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

This document provides the product specification for the SavantIC Semiconductor 2SC5271 silicon NPN power transistor. Key details include: - It has a TO-220F package and is intended for resonant switching regulator and general purpose applications. - Absolute maximum ratings include a collector-emitter voltage of 300V and collector current of 5A. - Characteristics include a collector-emitter breakdown voltage of 200V min, saturation voltage of 1V max, and DC current gain of 100 min. - Switching times are under 1μs for turn-on, storage, and fall times. - The outline dimensions for the TO-220F package are provided.
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0% found this document useful (0 votes)
20 views

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

This document provides the product specification for the SavantIC Semiconductor 2SC5271 silicon NPN power transistor. Key details include: - It has a TO-220F package and is intended for resonant switching regulator and general purpose applications. - Absolute maximum ratings include a collector-emitter voltage of 300V and collector current of 5A. - Characteristics include a collector-emitter breakdown voltage of 200V min, saturation voltage of 1V max, and DC current gain of 100 min. - Switching times are under 1μs for turn-on, storage, and fall times. - The outline dimensions for the TO-220F package are provided.
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC5271

DESCRIPTION With TO-220F package APPLICATIONS For resonant switching regulator and general purpose applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION

Absolute maximum ratings(Ta=25 )


SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 300 200 7 5 10 2 30 150 -55~150 UNIT V V V A A A W

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC5271

CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA; IB=0 IC=2.5A;IB=0.5A IC=2.5A;IB=0.5A VCB=300V; IE=0 VEB=7V; IC=0 IC=2.5A ; VCE=2V IC=1mA ; VCE=2V IE=-0.5A ; VCE=12V VCB=10V;f=1MHz 10 15 10 45 MHz pF MIN 200 1.0 1.5 100 100 30 TYP. MAX UNIT V V V A A SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB

Switching times ton tstg tf Turn-on time Storage time Fall time IC=2.5A;IB1=0.5A;IB2=-1.0A RL=60?;VCC=150V 0.3 1.0 0.1 s s s

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors


PACKAGE OUTLINE

2SC5271

Fig.2 Outline dimensions

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