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The document discusses the design of a low noise amplifier (LNA) to operate at 12GHz Ku-band for use in satellite receivers. Key aspects of designing an LNA at such a high frequency include addressing parasitic behaviors of capacitors and stability issues. The designed and simulated LNA using Microwave Office achieved a gain of 8.90 dB and noise figure of 2.19 dB on a small 0.316mm2 monolithic chip suitable for Ku-band satellite applications.

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Sandeep Kumar
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0% found this document useful (0 votes)
15 views

Y o !"#$ % ' # $#+$$!# y y

The document discusses the design of a low noise amplifier (LNA) to operate at 12GHz Ku-band for use in satellite receivers. Key aspects of designing an LNA at such a high frequency include addressing parasitic behaviors of capacitors and stability issues. The designed and simulated LNA using Microwave Office achieved a gain of 8.90 dB and noise figure of 2.19 dB on a small 0.316mm2 monolithic chip suitable for Ku-band satellite applications.

Uploaded by

Sandeep Kumar
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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Design of a Low Noise Amplifier with GaAs MESFET at ku_Band

G.Siva Rama Krishna, B.V.Narasimha School of Electronics and Engineering, VIT University, Vellore - 632014, Tamil Nadu, India. [email protected]; +91-7418644217

Abstract: A low noise amplifier (LNA) is an electronic device used to filter out the noise of input signals received at the front ends of communication systems. Low noise amplifier is used in a wide variety of applications such as RF communication systems including wireless computer networks, mobile phones, and satellite receiver. Designing a Low Noise amplifier (LNA) at Ku-band needs a lot of concerns to be taken care of. Circuits at high frequency (12 GHz) digress from their normal behaviour and are not very easy to implement. Major problems in designing a low noise amplifier at Ku-band are the parasitic behaviours of capacitors and stability. This paper presents the design and simulation of a MMIC low noise amplifier to operate at 12GHz Ku-band with the gain of 8.90 dB and 2.19 dB noise figure for satellite receiver. The parameters are optimized by using Microwave Office Simulator (AWR) Ver. 2006. The size of the monolithic chip is 0.316mm2.

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